公开(公告)号：US20220293801A1

公开(公告)日：2022-09-15

申请号：US17829152

申请日：2022-05-31

申请人： Sunpower Corporation ,  Total Marketing Services

发明人： Yu-Chen Shen ,  Perine Jaffrennou ,  Gilles Olav Tanguy Sylvain Poulain ,  Michael C. Johnson ,  Seung Bum Rim

IPC分类号： H01L31/0216 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/0747

摘要： Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.

公开(公告)号：US20190051769A1

公开(公告)日：2019-02-14

申请号：US16163384

申请日：2018-10-17

申请人： SunPower Corporation ,  Total Marketing Services

发明人： Seung Bum Rim ,  Genevieve A. Solomon ,  Michael C. Johnson ,  Jérôme Damon-Lacoste ,  Antoine Marie Olivier Salomon

IPC分类号： H01L31/0216 ,  H01L31/0747 ,  H01L31/068 ,  H01L31/0745

摘要： Methods of passivating light-receiving surfaces of solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a silicon substrate having a light-receiving surface. An intrinsic silicon layer is disposed above the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the intrinsic silicon layer. A non-conductive anti-reflective coating (ARC) layer is disposed on the N-type silicon layer. In another example, a solar cell includes a silicon substrate having a light-receiving surface. A tunneling dielectric layer is disposed on the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the tunneling dielectric layer. A non-conductive anti-reflective coating (ARC) layer is disposed on the N-type silicon layer.

公开(公告)号：US11374145B2

公开(公告)日：2022-06-28

申请号：US16704983

申请日：2019-12-05

申请人： SunPower Corporation ,  Total Marketing Services

发明人： Yu-Chen Shen ,  Périne Jaffrennou ,  Gilles Olav Tanguy Sylvain Poulain ,  Michael C. Johnson ,  Seung Bum Rim

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/0747

摘要： Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.

公开(公告)号：US20180138354A1

公开(公告)日：2018-05-17

申请号：US15807915

申请日：2017-11-09

申请人： SUNPOWER CORPORATION ,  TOTAL MARKETING SERVICES

发明人： Périne Jaffrennou ,  Gilles Olav Tanguy Sylvain Poulain ,  Kieran Mark Tracy ,  Taiqing Qiu ,  Michael C. Johnson ,  Seung Bum Rim

IPC分类号： H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/1864 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/1868

摘要： A curing tool for fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a curing tool combines a UV-exposure stage and one or more of a deposition or an annealing stage to fabricate a solar cell. For example, a radiation curing stage can precede a back end processing stage used to perform operations on a back contact solar cell. The curing tool can therefore be used to perform a method to improve UV stability of solar cells.

公开(公告)号：US11824130B2

公开(公告)日：2023-11-21

申请号：US17966649

申请日：2022-10-14

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  Hung-Ming Wang ,  David Okawa ,  Lewis Abra

IPC分类号： H01L31/0352 ,  H01L31/05 ,  H01L31/18 ,  H01L31/0465

CPC分类号： H01L31/035281 ,  H01L31/0465 ,  H01L31/0504 ,  H01L31/0512 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/50

摘要： Methods of fabricating solar cells having a plurality of sub-cells coupled by cell level interconnection, and the resulting solar cells, are described herein. In an example, a solar cell includes a plurality of sub-cells. Each of the plurality of sub-cells includes a singulated and physically separated semiconductor substrate portion. Each of the plurality of sub-cells includes an on-sub-cell metallization structure interconnecting emitter regions of the sub-cell. An inter-sub-cell metallization structure couples adjacent ones of the plurality of sub-cells. The inter-sub-cell metallization structure is different in composition from the on-sub-cell metallization structure.

公开(公告)号：US11502208B2

公开(公告)日：2022-11-15

申请号：US16679012

申请日：2019-11-08

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/068 ,  H01L31/20 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/0368

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US10665739B2

公开(公告)日：2020-05-26

申请号：US15220273

申请日：2016-07-26

申请人： SUNPOWER CORPORATION

发明人： Seung Bum Rim ,  Gabriel Harley

IPC分类号： H01L31/0443 ,  H01L31/18 ,  H01L27/142 ,  H01L31/02 ,  H01L31/0368

摘要： A solar cell can include a built-in bypass diode. In one embodiment, the solar cell can include an active region disposed in or above a first portion of a substrate and a bypass diode disposed in or above a second portion of the substrate. The first and second portions of the substrate can be physically separated with a groove. A metallization structure can couple the active region to the bypass diode.

公开(公告)号：US20190273467A1

公开(公告)日：2019-09-05

申请号：US16298801

申请日：2019-03-11

申请人： SunPower Corporation

发明人： Xiuwen Tu ,  David Aitan Soltz ,  Michael C. Johnson ,  Seung Bum Rim ,  Taiqing Qiu ,  Yu-Chen Shen ,  Kieran Mark Tracy

IPC分类号： H02S50/15 ,  G01N21/64

摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

公开(公告)号：US20230038148A1

公开(公告)日：2023-02-09

申请号：US17971369

申请日：2022-10-21

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  Gabriel Harley

IPC分类号： H01L31/0443 ,  H01L31/18 ,  H01L27/142 ,  H01L31/02 ,  H01L31/0368

摘要： A solar cell can include a built-in bypass diode. In one embodiment, the solar cell can include an active region disposed in or above a first portion of a substrate and a bypass diode disposed in or above a second portion of the substrate. The first and second portions of the substrate can be physically separated with a groove. A metallization structure can couple the active region to the bypass diode.

公开(公告)号：US20230033252A1

公开(公告)日：2023-02-02

申请号：US17966649

申请日：2022-10-14

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  Hung-Ming Wang ,  David Okawa ,  Lewis Abra

IPC分类号： H01L31/0352 ,  H01L31/05 ,  H01L31/18 ,  H01L31/0465

摘要： Methods of fabricating solar cells having a plurality of sub-cells coupled by cell level interconnection, and the resulting solar cells, are described herein. In an example, a solar cell includes a plurality of sub-cells. Each of the plurality of sub-cells includes a singulated and physically separated semiconductor substrate portion. Each of the plurality of sub-cells includes an on-sub-cell metallization structure interconnecting emitter regions of the sub-cell. An inter-sub-cell metallization structure couples adjacent ones of the plurality of sub-cells. The inter-sub-cell metallization structure is different in composition from the on-sub-cell metallization structure.