公开(公告)号：US08096852B2

公开(公告)日：2012-01-17

申请号：US12187637

申请日：2008-08-07

申请人： Sameer Deshpande ,  Shou-Sung Chang ,  Hung Chih Chen ,  Roy C Nangoy ,  Stan D Tsai

发明人： Sameer Deshpande ,  Shou-Sung Chang ,  Hung Chih Chen ,  Roy C Nangoy ,  Stan D Tsai

IPC分类号： B24B49/18

CPC分类号： B24B49/18 ,  B24B37/005 ,  B24B49/16 ,  B24B53/017

摘要： Polishing pads used in CMP machines are consumable components that are typically replaced after a specific number of wafers have been processed. The life of a polishing pad is optimized by controlling the rate of material removal from the polishing pad by the conditioning disk. The conditioning disk removes enough material so the polishing surface can properly process the wafers but does not remove any excess material. Preventing excess material removal extends the life of the polishing pad. During CMP processing, the controller receives data concerning the torque applied to the conditioning disk and the torque applied to the arm to sweep the conditioning disk across the polishing pad. Based upon the detected operating conditions, the system can predict the rate of material removal and adjust the forces applied to the conditioning disk so that the life of the polishing pad is optimized.

摘要翻译： 在CMP机器中使用的抛光垫是可消耗的部件，通常在处理特定数量的晶片之后被替换。 抛光垫的寿命通过控制由调节盘从抛光垫去除的材料的速率被优化。 调节盘移除足够的材料，因此抛光表面可以适当地处理晶片，但不会去除任何多余的材料。 防止多余的材料去除延长了抛光垫的寿命。 在CMP处理期间，控制器接收关于施加到调节盘的扭矩和施加到臂上的扭矩以扫掠经过抛光垫的调节盘的数据。 基于检测到的操作条件，系统可以预测材料去除速率并调节施加到调节盘的力，以便抛光垫的寿命被优化。

公开(公告)号：US08221193B2

公开(公告)日：2012-07-17

申请号：US12187675

申请日：2008-08-07

申请人： Shou-Sung Chang ,  Hung Chih Chen ,  Stan D Tsai ,  Yuchun Wang

发明人： Shou-Sung Chang ,  Hung Chih Chen ,  Stan D Tsai ,  Yuchun Wang

IPC分类号： B24B49/12 ,  B24B49/18

CPC分类号： B24B37/042 ,  B24B49/02 ,  B24B53/017

摘要： A chemical mechanical polishing apparatus includes a metrology system that detects the thickness of the polishing pad as semiconductor wafers are processed and the thickness of the polishing pad is reduced. The chemical mechanical polishing apparatus includes a controller that adjusts the rate of material removal of a conditioning disk when areas of the polishing surface are detected that are higher or lower than the adjacent areas of the polishing pad.

摘要翻译： 化学机械抛光装置包括测量系统，其在半导体晶片被处理时检测抛光垫的厚度，并且抛光垫的厚度减小。 化学机械抛光装置包括控制器，当检测到比抛光垫的相邻区域更高或更低的区域时，调节调节盘的材料去除速率。

公开(公告)号：US07029365B2

公开(公告)日：2006-04-18

申请号：US10744904

申请日：2003-12-23

申请人： Shou-Sung Chang ,  Stan D Tsai ,  Donald J. K. Olgado ,  Liang-Yuh Chen ,  Alain Duboust ,  Ralph M. Wadensweiler

发明人： Shou-Sung Chang ,  Stan D Tsai ,  Donald J. K. Olgado ,  Liang-Yuh Chen ,  Alain Duboust ,  Ralph M. Wadensweiler

IPC分类号： B24D11/02 ,  C25F3/00 ,  C25D17/00 ,  C25C7/04

CPC分类号： B24B37/22 ,  B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/046 ,  B24B37/11 ,  B24B37/24 ,  B24B37/26 ,  B24B49/16 ,  B24B53/017 ,  C25D17/10 ,  H01L21/32125

摘要： Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a processing layer having a working surface adapted to process a substrate, a lower layer coupled to and disposed below the processing layer, and an electrode having an upper surface disposed above the lower layer and below the working surface of the processing layer. The upper surface of the electrode is at least partially exposed to the working surface to provide an electrolyte pathway between the upper surface of the electrode and the working surface.

公开(公告)号：US06653242B1

公开(公告)日：2003-11-25

申请号：US09608078

申请日：2000-06-30

申请人： Lizhong Sun ,  Stan D Tsai ,  Shijian Li ,  John M White

发明人： Lizhong Sun ,  Stan D Tsai ,  Shijian Li ,  John M White

IPC分类号： H01L21302

CPC分类号： H01L21/3212 ,  C09G1/04

摘要： A method and composition for planarizing a substrate. The composition includes one or more surfactants, including one or more anionic surfactants, Zweitter-ionic surfactants, dispersers, or combinations thereof, one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more surfactants of anionic surfactants, Zweitter-ionic surfactants, or combinations thereof.

摘要翻译： 一种用于平坦化衬底的方法和组合物。 组合物包括一种或多种表面活性剂，包括一种或多种阴离子表面活性剂，Zweitter离子表面活性剂，分散剂或其组合，一种或多种螯合剂，一种或多种氧化剂，一种或多种腐蚀抑制剂和去离子水。 组合物还可以包含一种或多种调节pH和/或磨料颗粒的试剂。 该方法包括使用包含一种或多种阴离子表面活性剂，Zweitter离子型表面活性剂或其组合的表面活性剂的组合物平面化底物。

公开(公告)号：US20070235344A1

公开(公告)日：2007-10-11

申请号：US11399560

申请日：2006-04-06

申请人： Renhe Jia ,  You Wang ,  Gerald Alonzo ,  Yongqi Hu ,  Zhihong Wang ,  Jie Diao ,  Stan D Tsai ,  Alpay Yilmaz ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

发明人： Renhe Jia ,  You Wang ,  Gerald Alonzo ,  Yongqi Hu ,  Zhihong Wang ,  Jie Diao ,  Stan D Tsai ,  Alpay Yilmaz ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

IPC分类号： B23H5/08

CPC分类号： B23H5/08 ,  C25F3/02 ,  H01L21/32125

摘要： A method for electrochemical mechanical polishing (ECMP) is disclosed. The polishing rate and surface finish of the layer on the wafer are improved by controlling the surface speed of both the platen and head, controlling the current applied to the pad, and preselecting the density of the perforations on the fully conductive polishing pad. ECMP produces much higher removal rates, good surface finishes, and good planarization efficiency at a lower down force. Generally, increasing the surface speed of both the platen and the head will increase the surface smoothness. Also, increasing the current density on the wafer will increase the surface smoothness. There is virtually no difference in the smoothness of the wafer surface between the center, middle, and edge of the wafer. For copper, removal rates of 10,000 Å/min and greater can be achieved.

摘要翻译： 公开了一种用于电化学机械抛光（ECMP）的方法。 通过控制压板和头部的表面速度，控制施加到垫的电流以及预选在全导电抛光垫上的穿孔密度来提高晶片上层的抛光速率和表面光洁度。 ECMP在较低的下压力下产生高得多的去除率，良好的表面光洁度和良好的平面化效率。 通常，增加压板和头部的表面速度将增加表面平滑度。 此外，增加晶片上的电流密度将增加表面平滑度。 在晶片的中心，中间和边缘之间的晶片表面的平滑度几乎没有差别。 对于铜，可以实现10,000 / min以上的去除率。