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公开(公告)号：US09177867B2
公开(公告)日：2015-11-03
申请号：US13993330
申请日：2011-09-30
IPC分类号： H01L21/283 , H01L21/8238 , H01L29/66 , H01L29/78 , H01L29/49 , H01L29/51 , H01L21/768
CPC分类号： H01L21/823828 , H01L21/76897 , H01L21/823857 , H01L29/41791 , H01L29/495 , H01L29/51 , H01L29/66545 , H01L29/66795 , H01L29/785 , H01L2029/7858
摘要： The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
摘要翻译： 本说明书涉及制造具有非平面晶体管的微电子器件的领域。 本说明书的实施例涉及在非平面NMOS晶体管内形成栅极，其中可将NMOS功能材料（例如铝，钛和碳的组成）与含钛栅极填充物结合使用 以便于在形成非平面NMOS晶体管栅极的栅电极时使用含钨导电材料。
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公开(公告)号：US20150041926A1
公开(公告)日：2015-02-12
申请号：US13993330
申请日：2011-09-30
IPC分类号： H01L21/8238 , H01L29/51 , H01L29/49
CPC分类号： H01L21/823828 , H01L21/76897 , H01L21/823857 , H01L29/41791 , H01L29/495 , H01L29/51 , H01L29/66545 , H01L29/66795 , H01L29/785 , H01L2029/7858
摘要： The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
摘要翻译： 本说明书涉及制造具有非平面晶体管的微电子器件的领域。 本说明书的实施例涉及在非平面NMOS晶体管内形成栅极，其中可将NMOS功能材料（例如铝，钛和碳的组成）与含钛栅极填充物结合使用 以便于在形成非平面NMOS晶体管栅极的栅电极时使用含钨导电材料。
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公开(公告)号：US09202699B2
公开(公告)日：2015-12-01
申请号：US13992598
申请日：2011-09-30
IPC分类号： H01L21/28 , H01L29/66 , H01L29/78 , H01L21/768
CPC分类号： H01L29/66795 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/28008 , H01L21/28247 , H01L21/76897 , H01L29/66545 , H01L29/6656 , H01L29/785 , H01L2029/7858
摘要： The present description relates to the field of fabricating microelectronic transistors, including non-planar transistors, for microelectronic devices. Embodiments of the present description relate to the formation a recessed gate electrode capped by a substantially void-free dielectric capping dielectric structure which may be formed with a high density plasma process.
摘要翻译： 本说明书涉及制造用于微电子器件的微电子晶体管领域，包括非平面晶体管。 本说明书的实施例涉及形成由可以用高密度等离子体工艺形成的基本上无空隙的电介质封盖电介质结构覆盖的凹陷栅电极。
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公开(公告)号：US20130256767A1
公开(公告)日：2013-10-03
申请号：US13992550
申请日：2011-10-01
CPC分类号： H01L29/785 , H01L21/02 , H01L21/02532 , H01L21/283 , H01L21/28518 , H01L21/32053 , H01L21/76843 , H01L21/76855 , H01L21/76897 , H01L23/48 , H01L29/16 , H01L29/41791 , H01L29/456 , H01L29/66545 , H01L29/6656 , H01L29/66666 , H01L29/66795 , H01L29/78 , H01L29/7851 , H01L2924/0002 , H01L2924/00
摘要： The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.
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公开(公告)号：US08981435B2
公开(公告)日：2015-03-17
申请号：US13992550
申请日：2011-10-01
CPC分类号： H01L29/785 , H01L21/02 , H01L21/02532 , H01L21/283 , H01L21/28518 , H01L21/32053 , H01L21/76843 , H01L21/76855 , H01L21/76897 , H01L23/48 , H01L29/16 , H01L29/41791 , H01L29/456 , H01L29/66545 , H01L29/6656 , H01L29/66666 , H01L29/66795 , H01L29/78 , H01L29/7851 , H01L2924/0002 , H01L2924/00
摘要： The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.
摘要翻译： 本说明书涉及制造具有非平面晶体管的微电子器件的领域。 本发明的实施例涉及在非平面晶体管内形成源极/漏极接触，其中可以使用含钛接触界面来形成源极/漏极接触，其中形成在含钛的 界面和含硅源/排水结构。
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公开(公告)号：US20130248952A1
公开(公告)日：2013-09-26
申请号：US13992598
申请日：2011-09-30
CPC分类号： H01L29/66795 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/28008 , H01L21/28247 , H01L21/76897 , H01L29/66545 , H01L29/6656 , H01L29/785 , H01L2029/7858
摘要： The present description relates to the field of fabricating microelectronic transistors, including non-planar transistors, for microelectronic devices. Embodiments of the present description relate to the formation a recessed gate electrode capped by a substantially void-free dielectric capping dielectric structure which may be formed with a high density plasma process.
摘要翻译： 本说明书涉及制造用于微电子器件的微电子晶体管领域，包括非平面晶体管。 本说明书的实施例涉及形成由可以用高密度等离子体工艺形成的基本上无空隙的电介质封盖电介质结构覆盖的凹陷栅电极。
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