公开(公告)号：US20140145178A1

公开(公告)日：2014-05-29

申请号：US13838219

申请日：2013-03-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YONG-SU LEE ,  Su-Hyoung Kang ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park ,  Se-Hwan Yu ,  Myoung-Geun Cha

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.

Abstract translation: 开关元件包括有源图形，其包括沟道部分，连接到沟道部分的源极部分和连接到沟道部分的漏极部分，源极部分，与有源图案的沟道部分重叠的栅极电极，栅极绝缘层 设置在有源图案的沟道部分和栅电极之间的层，设置在有源图案的源极部分上以与源极部分欧姆接触的源电极以及设置在有源图案的漏极部分上的漏电极， 与漏极部分欧姆接触。 有源图案的漏极部分和沟道部分包括相同或基本上相同的材料。

公开(公告)号：US09312279B2

公开(公告)日：2016-04-12

申请号：US14170202

申请日：2014-01-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myoung-Geun Cha ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park

IPC: H01L21/00 ,  H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/127

Abstract: A thin film transistor (TFT) array substrate includes a substrate, a gate electrode, a gate line, a first data line, and a second data line on the substrate, a gate insulating layer that covers the gate electrode and the gate line and includes a first opening that exposes a portion of the first data line and a second opening that exposes a portion of the second data line, an active layer disposed on the gate insulating layer so that at least one portion of the active layer overlaps the gate electrode, a drain electrode and a source electrode that extend from opposite sides of the active layer, a pixel electrode that extends from the drain electrode, and a connection wiring that extends from the source electrode, and connects the first data line to the second data line through the first and second openings of the gate insulating layer.

Abstract translation: 薄膜晶体管（TFT）阵列基板包括在基板上的基板，栅电极，栅极线，第一数据线和第二数据线，覆盖栅电极和栅极线的栅极绝缘层， 暴露第一数据线的一部分的第一开口和暴露第二数据线的一部分的第二开口，设置在栅绝缘层上的有源层，使得有源层的至少一部分与栅电极重叠， 从有源层的相对侧延伸的漏电极和源电极，从漏极延伸的像素电极和从源电极延伸的连接布线，并且将第一数据线连接到第二数据线通过 栅极绝缘层的第一和第二开口。

公开(公告)号：US09252284B2

公开(公告)日：2016-02-02

申请号：US14182989

申请日：2014-02-18

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Chan Lee ,  Yoon-Ho Khang ,  Su-Hyoung Kang ,  Dong-Jo Kim ,  Ji-Seon Lee ,  Myoung-Geun Cha ,  Deuk-Myung Ji

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693

Abstract: A display substrate and a method for manufacturing a display substrate are disclosed. In the method, a gate electrode is formed on a base substrate. An active pattern is formed using an oxide semiconductor. The active pattern partially overlaps the gate electrode. A first insulation layer pattern and a second insulation layer pattern are sequentially formed on the active pattern. The first insulation layer pattern and the second insulation layer pattern overlap the gate electrode. A third insulation layer is formed to cover the active pattern, the first insulation layer pattern and the second insulation layer pattern. Either the first insulation layer pattern or the second insulation layer pattern includes aluminum oxide. Forming the first insulation layer pattern and the second insulation layer pattern includes performing a backside exposure process using the gate electrode as an exposure mask.

Abstract translation: 公开了显示基板和显示基板的制造方法。 在该方法中，在基底基板上形成栅电极。 使用氧化物半导体形成有源图案。 有源图案部分地与栅电极重叠。 在活性图案上依次形成第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案和第二绝缘层图案与栅电极重叠。 形成第三绝缘层以覆盖有源图案，第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案或第二绝缘层图案都包括氧化铝。 形成第一绝缘层图案和第二绝缘层图案包括使用栅电极进行背面曝光处理作为曝光掩模。

公开(公告)号：US20150060843A1

公开(公告)日：2015-03-05

申请号：US14182989

申请日：2014-02-18

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Chan LEE ,  Yoon-Ho Khang ,  Su-Hyoung Kang ,  Dong-Jo Kim ,  Ji-Seon Lee ,  Myoung-Geun Cha ,  Deuk-Myung Ji

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693

Abstract: A display substrate and a method for manufacturing a display substrate are disclosed. In the method, a gate electrode is formed on a base substrate. An active pattern is formed using an oxide semiconductor. The active pattern partially overlaps the gate electrode. A first insulation layer pattern and a second insulation layer pattern are sequentially formed on the active pattern. The first insulation layer pattern and the second insulation layer pattern overlap the gate electrode. A third insulation layer is formed to cover the active pattern, the first insulation layer pattern and the second insulation layer pattern. Either the first insulation layer pattern or the second insulation layer pattern includes aluminum oxide. Forming the first insulation layer pattern and the second insulation layer pattern includes performing a backside exposure process using the gate electrode as an exposure mask.

Abstract translation: 公开了显示基板和显示基板的制造方法。 在该方法中，在基底基板上形成栅电极。 使用氧化物半导体形成有源图案。 有源图案部分地与栅电极重叠。 在活性图案上依次形成第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案和第二绝缘层图案与栅电极重叠。 形成第三绝缘层以覆盖有源图案，第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案或第二绝缘层图案都包括氧化铝。 形成第一绝缘层图案和第二绝缘层图案包括使用栅电极进行背面曝光处理作为曝光掩模。

公开(公告)号：US09991319B2

公开(公告)日：2018-06-05

申请号：US15377794

申请日：2016-12-13

Applicant: Samsung Display Co., Ltd

Inventor： Myoung-Geun Cha ,  Sang-Ho Park ,  Hyun-Jae Na ,  Yoon-Ho Khang ,  Dae-Ho Kim

IPC: H01L29/08 ,  H01L27/32 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1343

CPC classification number: H01L27/3232 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2201/123 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A thin film transistor (TFT), method of manufacturing the TFT and a flat panel display having the TFT are disclosed. In one aspect, the TFT comprises a substrate and an active layer formed over the substrate, wherein the active layer is formed of oxide semiconductor, and wherein the active layer includes two opposing sides. The TFT also comprises source and drain regions formed at the opposing sides of the active layer, a first insulating layer formed over the active layer, a gate electrode formed over the active layer, a second insulating layer formed covering the first insulation layer and the gate electrode, and a first conductive layer formed on the source and drain regions and contacting the second insulating layer.

公开(公告)号：US20150206932A1

公开(公告)日：2015-07-23

申请号：US14558458

申请日：2014-12-02

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung-Geun Cha ,  Sang-Ho Park ,  Hyun-Jae Na ,  Yoon-Ho Khang ,  Dae-Ho Kim

IPC: H01L27/32 ,  H01L29/786 ,  H01L21/477 ,  H01L21/443 ,  H01L21/461 ,  H01L27/12 ,  H01L29/45

CPC classification number: H01L27/3232 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2201/123 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A thin film transistor (TFT), method of manufacturing the TFT and a flat panel display having the TFT are disclosed. In one aspect, the TFT comprises a substrate and an active layer formed over the substrate, wherein the active layer is formed of oxide semiconductor, and wherein the active layer includes two opposing sides. The TFT also comprises source and drain regions formed at the opposing sides of the active layer, a first insulating layer formed over the active layer, a gate electrode formed over the active layer, a second insulating layer formed covering the first insulation layer and the gate electrode, and a first conductive layer formed on the source and drain regions and contacting the second insulating layer.

Abstract translation: 公开了薄膜晶体管（TFT），制造TFT的方法和具有TFT的平板显示器。 在一个方面，TFT包括衬底和形成在衬底上的有源层，其中有源层由氧化物半导体形成，并且其中有源层包括两个相对的侧面。 TFT还包括形成在有源层的相对侧的源区和漏区，在有源层上形成的第一绝缘层，形成在有源层上的栅电极，形成为覆盖第一绝缘层和栅极的第二绝缘层 电极，以及形成在源区和漏区上并接触第二绝缘层的第一导电层。

公开(公告)号：US20150069378A1

公开(公告)日：2015-03-12

申请号：US14170202

申请日：2014-01-31

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung-Geun Cha ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/127

Abstract: A thin film transistor (TFT) array substrate includes a substrate, a gate electrode, a gate line, a first data line, and a second data line on the substrate, a gate insulating layer that covers the gate electrode and the gate line and includes a first opening that exposes a portion of the first data line and a second opening that exposes a portion of the second data line, an active layer disposed on the gate insulating layer so that at least one portion of the active layer overlaps the gate electrode, a drain electrode and a source electrode that extend from opposite sides of the active layer, a pixel electrode that extends from the drain electrode, and a connection wiring that extends from the source electrode, and connects the first data line to the second data line through the first and second openings of the gate insulating layer.

Abstract translation: 薄膜晶体管（TFT）阵列基板包括在基板上的基板，栅电极，栅极线，第一数据线和第二数据线，覆盖栅电极和栅极线的栅极绝缘层， 暴露第一数据线的一部分的第一开口和暴露第二数据线的一部分的第二开口，设置在栅绝缘层上的有源层，使得有源层的至少一部分与栅电极重叠， 从有源层的相对侧延伸的漏电极和源电极，从漏极延伸的像素电极和从源电极延伸的连接布线，并且将第一数据线连接到第二数据线通过 栅极绝缘层的第一和第二开口。

公开(公告)号：US09484362B2

公开(公告)日：2016-11-01

申请号：US14262761

申请日：2014-04-27

Applicant: Samsung Display Co., LTD.

Inventor： Dae-Ho Kim ,  Hyun-Jae Na ,  Jae-Neung Kim ,  Yu-Gwang Jeong ,  Myoung-Geun Cha ,  Sang-Gab Kim

IPC: H01L29/04 ,  H01L27/12 ,  H01L29/417

CPC classification number: H01L27/1225 ,  H01L27/1244 ,  H01L27/1248 ,  H01L29/41733

Abstract: A display substrate includes an active pattern, a gate electrode, a first insulation layer and a pixel electrode. The active pattern is disposed on a base substrate. The active pattern includes a metal oxide semiconductor. The gate electrode overlaps the active pattern. The first insulation layer covers the gate electrode and the active pattern, and a contact hole is defined in the first insulation layer. The pixel electrode is electrically connected to the active pattern via the contact hole penetrating the first insulation layer. A first angle defined by a bottom surface of the first insulation layer and a sidewall of the first insulation layer exposed by the contact hole is between about 30° and about 50°.

Abstract translation: 显示基板包括有源图案，栅电极，第一绝缘层和像素电极。 有源图案设置在基底基板上。 有源图案包括金属氧化物半导体。 栅电极与有源图案重叠。 第一绝缘层覆盖栅电极和有源图案，并且在第一绝缘层中限定接触孔。 像素电极经由穿过第一绝缘层的接触孔电连接到有源图案。 由第一绝缘层的底表面和由接触孔露出的第一绝缘层的侧壁限定的第一角度在约30°至约50°之间。

公开(公告)号：US08884286B2

公开(公告)日：2014-11-11

申请号：US13838219

申请日：2013-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Su Lee ,  Su-Hyoung Kang ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park ,  Se-Hwan Yu ,  Myoung-Geun Cha

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.

Abstract translation: 开关元件包括有源图形，其包括沟道部分，连接到沟道部分的源极部分和连接到沟道部分的漏极部分，源极部分，与有源图案的沟道部分重叠的栅极电极，栅极绝缘层 设置在有源图案的沟道部分和栅电极之间的层，设置在有源图案的源极部分上以与源极部分欧姆接触的源电极以及设置在有源图案的漏极部分上的漏电极， 与漏极部分欧姆接触。 有源图案的漏极部分和沟道部分包括相同或基本上相同的材料。

公开(公告)号：US20140138671A1

公开(公告)日：2014-05-22

申请号：US13856851

申请日：2013-04-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong-Su LEE ,  Hyang-Shik Kong ,  Yoon-Ho Khang ,  Hyun-Jae NA ,  Se-Hwan Yu ,  Myoung-Geun Cha

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969

Abstract: A display substrate includes a base substrate, a data line disposed on the base substrate, a gate line crossing the data line, a first insulation layer disposed on the base substrate, an active pattern disposed on the first insulation layer and comprising a channel comprising an oxide semiconductor, a source electrode connected to the channel, and a drain electrode connected to the channel, a second insulation layer disposed on the active pattern, and contacting to the source electrode and the drain electrode, a gate electrode disposed on the second insulation layer, and overlapping with the channel, a passivation layer disposed on the gate electrode and the second insulation layer, and a pixel electrode electrically connected to the drain electrode through a first contact hole formed through the passivation layer and the second insulation layer.

Abstract translation: 显示基板包括基底基板，设置在基底基板上的数据线，与数据线交叉的栅极线，设置在基底基板上的第一绝缘层，设置在第一绝缘层上的有源图案， 氧化物半导体，连接到沟道的源电极和连接到沟道的漏电极，设置在有源图案上的第二绝缘层，并与源电极和漏电极接触;栅极，设置在第二绝缘层上 并且与沟道重叠，设置在栅电极和第二绝缘层上的钝化层以及通过形成在钝化层和第二绝缘层上的第一接触孔与漏电极电连接的像素电极。