公开(公告)号：US20150179825A1

公开(公告)日：2015-06-25

申请号：US14332958

申请日：2014-07-16

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Jae Kyu SUNG ,  Chang Su Jang ,  In-Hyuk Song ,  Kyu Hyun Mo ,  Sun Jae Yoon

IPC: H01L29/861 ,  H01L21/265 ,  H01L29/06 ,  H01L29/66 ,  H01L29/36

CPC classification number: H01L29/36 ,  H01L29/402 ,  H01L29/66136 ,  H01L29/8611

Abstract: A diode device may include a first conductivity type first semiconductor region, a second conductivity type second semiconductor region partially formed inside an upper portion of the first semiconductor region, and second conductivity type third semiconductor regions partially formed inside the upper portion of the first semiconductor region, formed on sides of the second semiconductor region, and having an impurity concentration higher than that of the second semiconductor region.

Abstract translation: 二极管器件可以包括第一导电类型的第一半导体区域，部分地形成在第一半导体区域的上部内的第二导电类型的第二半导体区域，以及部分地形成在第一半导体区域的上部内的第二导电类型的第三半导体区域 形成在第二半导体区域的侧面上，其杂质浓度高于第二半导体区域的杂质浓度。

公开(公告)号：US20150187922A1

公开(公告)日：2015-07-02

申请号：US14274249

申请日：2014-05-09

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： In Hyuk SONG ,  Ji Yeon Oh ,  Ji Hye Kim ,  Sun Jae Yoon ,  Jae Hoon Park

IPC: H01L29/739 ,  H01L29/10

CPC classification number: H01L29/7397 ,  H01L29/42368

Abstract: A power semiconductor device may include: a first conductivity-type drift region in which a plurality of trench gates each including a gate insulating layer disposed on a surface thereof and a conductive material filling the interior thereof are disposed; a second conductivity-type body region disposed on an inner side of an upper portion of the drift region and disposed to be in contact with the trench gate; a first conductivity-type emitter region disposed on an inner side of an upper portion of the body region and disposed to be in contact with the trench gate; and a hole accumulation region disposed in the drift region, disposed below the body region, and disposed between the trench gates.

Abstract translation: 功率半导体器件可以包括：第一导电型漂移区，其中设置有各自包括设置在其表面上的栅极绝缘层的多个沟槽栅极和填充在其内部的导电材料; 第二导电型体区域，其设置在所述漂移区域的上部的内侧，并设置成与所述沟槽栅极接触; 第一导电型发射极区域，设置在所述主体区域的上部的内侧并且设置成与所述沟槽栅极接触; 以及设置在所述漂移区域中的空穴积聚区域，设置在所述主体区域的下方，并且设置在所述沟槽栅极之间。

公开(公告)号：US20150187678A1

公开(公告)日：2015-07-02

申请号：US14270894

申请日：2014-05-06

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Jae Hoon PARK ,  Sun Jae Yoon ,  Chang Su Jang ,  Kee Ju Um ,  In Hyuk Song

IPC: H01L23/373

CPC classification number: H01L23/367 ,  H01L29/0834 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

Abstract: A power semiconductor device may include: a first conductivity-type first semiconductor layer; a second conductivity-type second semiconductor layer disposed above the first semiconductor layer; and a heat dissipation trench disposed to penetrate from an upper surface of the second semiconductor layer into a portion of the second semiconductor layer and having an insulating layer disposed on a surface thereof.

Abstract translation: 功率半导体器件可以包括：第一导电型第一半导体层; 设置在所述第一半导体层上方的第二导电型第二半导体层; 以及散热沟，其设置成从所述第二半导体层的上表面穿透到所述第二半导体层的一部分中，并且具有设置在其表面上的绝缘层。