公开(公告)号：US09334582B2

公开(公告)日：2016-05-10

申请号：US14602447

申请日：2015-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-uk Seo ,  Byoung-kyun Kim ,  Suk-ho Yoon ,  Keon-hun Lee ,  Kee-won Lee ,  Do-young Rhee ,  Sang-don Lee

IPC: H01L21/66 ,  C30B25/08 ,  H01L33/06 ,  G01N21/95 ,  H01L21/02 ,  H01L33/00

CPC classification number: C30B25/08 ,  C30B25/00 ,  C30B25/16 ,  C30B29/406 ,  G01N21/9501 ,  H01L21/0254 ,  H01L21/0262 ,  H01L22/12 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06

Abstract: An apparatus for evaluating the quality of a crystal includes an optical device that measures a surface reflectance of a wafer in which a V-pit is formed; and a data processing unit that calculates a threading dislocation density by calculating a difference in surface reflectance of the wafer that is measured by the optical device.

Abstract translation: 一种用于评估晶体质量的装置包括测量其中形成V凹坑的晶片的表面反射率的光学装置; 以及数据处理单元，其通过计算由所述光学装置测量的所述晶片的表面反射率的差异来计算穿透位错密度。

公开(公告)号：US20170062675A1

公开(公告)日：2017-03-02

申请号：US15219454

申请日：2016-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-young Lim ,  Tan Sakong ,  Eun-deok Sim ,  Suk-ho Yoon ,  Jeong-wook Lee

IPC: H01L33/58 ,  H01L33/00 ,  H01L33/32 ,  H01L33/16 ,  H01L33/44

CPC classification number: H01L33/58 ,  H01L33/0075 ,  H01L33/486 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: A method of manufacturing a light emitting diode (LED) includes forming a first material layer on a substrate, forming a second material layer on the first material layer, forming a photomask pattern on the second material layer, performing a first etching on the second material layer and a portion of the first material layer by using the photomask pattern as an etch mask, removing the photomask pattern, and forming a plurality of isolated structures by performing a second etching on the remaining portion of the first material layer until a top surface of the substrate is exposed.

Abstract translation: 一种制造发光二极管（LED）的方法包括在基板上形成第一材料层，在第一材料层上形成第二材料层，在第二材料层上形成光掩模图案，对第二材料进行第一蚀刻 层和一部分第一材料层，通过使用光掩模图案作为蚀刻掩模，去除光掩模图案，以及通过对第一材料层的剩余部分进行第二蚀刻形成多个隔离结构，直到第 衬底被暴露。