公开(公告)号：US12280466B2

公开(公告)日：2025-04-22

申请号：US17825449

申请日：2022-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyug Lee ,  Chae Lyoung Kim ,  Hoyoung Kim ,  Seungjun Lee

IPC: B24B37/04 ,  B24B37/07

Abstract: Disclosed are substrate polishing apparatuses, substrate polishing systems, and/or substrate polishing methods. The substrate polishing apparatus may include an electric field applying module, and a platen that rotates a polishing pad. The electric field applying module may include an inner electrode having a circular shape when viewed in plan. The platen may be on the inner electrode. A central axis of the inner electrode may be spaced apart from a central axis of the platen. The inner electrode may include a first electrode and a second electrode that may surround the first electrode and may have an annular shape.

公开(公告)号：US10388537B2

公开(公告)日：2019-08-20

申请号：US15428963

申请日：2017-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Lyoung Kim ,  Tae-Hong Kim ,  Jung-Min Oh ,  Yungjun Kim ,  Ingi Kim ,  Boun Yoon ,  Hyosan Lee ,  Sol Han

IPC: B08B3/02 ,  H01L21/306 ,  B24B37/20 ,  B24B53/017 ,  H01L21/02 ,  H01L21/67

Abstract: A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

公开(公告)号：US20220165562A1

公开(公告)日：2022-05-26

申请号：US17650710

申请日：2022-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Young Kim ,  Chae Lyoung Kim ,  Tae-Hong Kim ,  Youngjun Kim ,  Boun Yoon ,  Sol Han ,  Joonoh Kim

IPC: H01L21/02 ,  B08B3/02 ,  B08B5/02 ,  H01L21/67 ,  B05B1/14 ,  B05B7/08 ,  B05B7/00

Abstract: A cleaning apparatus includes a gas supply line and a cleaning liquid supply line. A nozzle is connected to the gas and the cleaning liquid supply lines. The nozzle applies the cleaning liquid to a substrate. A gas entrance port at a top of a body of the nozzle is connected to the gas supply line. A first cleaning liquid entrance port is disposed on a sidewall of the nozzle body and is connected to the cleaning liquid supply line. A fluid injection port is disposed at a bottom of the nozzle body and discharges both the gas and the cleaning liquid. An internal passage of the nozzle body connects each of the gas entrance port and the first cleaning liquid entrance port to the fluid injection port. The fluid injection port has a diameter that is greater than a diameter of the first cleaning liquid entrance port.

公开(公告)号：US20140051246A1

公开(公告)日：2014-02-20

申请号：US13962479

申请日：2013-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Lyoung Kim ,  Ilyoung Yoon ,  Boun Yoon

IPC: H01L21/306

CPC classification number: H01L21/30625 ,  H01L21/3212 ,  H01L21/7684 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of fabricating a semiconductor device are provided. The methods may include preparing a semiconductor substrate, forming insulating patterns including a trench on the semiconductor substrate, conformally forming a metal layer covering an inner surface of the trench on the insulating patterns, conformally forming a protecting layer on the metal layer, and performing a chemical mechanical polishing (CMP) process on the protecting layer and the metal layer until top surfaces of the insulating patterns are exposed, thereby forming a metal pattern and a protecting pattern in the trench. The CMP process may use a slurry including polishing particles having negative charges.

Abstract translation: 提供制造半导体器件的方法。 所述方法可以包括制备半导体衬底，在半导体衬底上形成包括沟槽的绝缘图案，保形地形成覆盖绝缘图案上的沟槽的内表面的金属层，在金属层上保形地形成保护层，并执行 在保护层和金属层上的化学机械抛光（CMP）工艺直到绝缘图案的顶表面露出，从而在沟槽中形成金属图案和保护图案。 CMP工艺可以使用包含具有负电荷的抛光颗粒的浆料。