公开(公告)号：US10388537B2

公开(公告)日：2019-08-20

申请号：US15428963

申请日：2017-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Lyoung Kim ,  Tae-Hong Kim ,  Jung-Min Oh ,  Yungjun Kim ,  Ingi Kim ,  Boun Yoon ,  Hyosan Lee ,  Sol Han

IPC: B08B3/02 ,  H01L21/306 ,  B24B37/20 ,  B24B53/017 ,  H01L21/02 ,  H01L21/67

Abstract: A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

公开(公告)号：US09677002B2

公开(公告)日：2017-06-13

申请号：US14879835

申请日：2015-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won Bae ,  Yongsun Ko ,  Byoungho Kwon ,  Bo yun Kim ,  Hongjin Kim ,  Sungoh Park ,  Kuntack Lee ,  Hyosan Lee ,  Sol Han

IPC: C09K13/06 ,  C23F1/26 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3213

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

公开(公告)号：US09165759B2

公开(公告)日：2015-10-20

申请号：US14086426

申请日：2013-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won Bae ,  Yongsun Ko ,  Byoungho Kwon ,  Bo yun Kim ,  Hongjin Kim ,  Sungoh Park ,  Kuntack Lee ,  Hyosan Lee ,  Sol Han

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/768

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US20230162970A1

公开(公告)日：2023-05-25

申请号：US18158276

申请日：2023-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Young KIM ,  Chae Lyung Kim ,  Tae-Hong Kim ,  Yungjun Kim ,  Boun Yoon ,  Sol Han ,  Joonoh Kim

IPC: H01L21/02 ,  B08B3/02 ,  B08B5/02 ,  H01L21/67 ,  B05B1/14 ,  B05B7/08 ,  B05B7/00

CPC classification number: H01L21/02057 ,  B08B3/024 ,  B08B5/02 ,  H01L21/67051 ,  B05B1/14 ,  B05B7/08 ,  B05B7/0075

Abstract: A cleaning apparatus includes a gas supply line and a cleaning liquid supply line. A nozzle is connected to the gas and the cleaning liquid supply lines. The nozzle applies the cleaning liquid to a substrate. A gas entrance port at a top of a body of the nozzle is connected to the gas supply line. A first cleaning liquid entrance port is disposed on a sidewall of the nozzle body and is connected to the cleaning liquid supply line. A fluid injection port is disposed at a bottom of the nozzle body and discharges both the gas and the cleaning liquid. An internal passage of the nozzle body connects each of the gas entrance port and the first cleaning liquid entrance port to the fluid injection port. The fluid injection port has a diameter that is greater than a diameter of the first cleaning liquid entrance port.

公开(公告)号：US20220165562A1

公开(公告)日：2022-05-26

申请号：US17650710

申请日：2022-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Young Kim ,  Chae Lyoung Kim ,  Tae-Hong Kim ,  Youngjun Kim ,  Boun Yoon ,  Sol Han ,  Joonoh Kim

IPC: H01L21/02 ,  B08B3/02 ,  B08B5/02 ,  H01L21/67 ,  B05B1/14 ,  B05B7/08 ,  B05B7/00

Abstract: A cleaning apparatus includes a gas supply line and a cleaning liquid supply line. A nozzle is connected to the gas and the cleaning liquid supply lines. The nozzle applies the cleaning liquid to a substrate. A gas entrance port at a top of a body of the nozzle is connected to the gas supply line. A first cleaning liquid entrance port is disposed on a sidewall of the nozzle body and is connected to the cleaning liquid supply line. A fluid injection port is disposed at a bottom of the nozzle body and discharges both the gas and the cleaning liquid. An internal passage of the nozzle body connects each of the gas entrance port and the first cleaning liquid entrance port to the fluid injection port. The fluid injection port has a diameter that is greater than a diameter of the first cleaning liquid entrance port.