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公开(公告)号：US20130146842A1
公开(公告)日：2013-06-13
申请号：US13712656
申请日：2012-12-12
发明人： Nam Sung KIM , Dong Ik Shin , Hyun Wook Shim , Dong Joon Kim , Young Sun Kim , Jung Seung YANG
IPC分类号： H01L33/06
摘要： A semiconductor light emitting device includes first conductivity type and second conductivity type semiconductor layers, an active layer disposed between the semiconductor layers and having a structure in which one or more quantum well layers and one or more quantum barrier layers are alternately disposed An electron blocking layer is disposed between the active layer and the second conductivity type semiconductor layer. A capping layer is disposed between the active layer and the electron blocking layer and blocking a dopant element from being injected into the active layer from the second conductivity type semiconductor layer.
摘要翻译： 半导体发光器件包括第一导电类型和第二导电类型半导体层，有源层设置在半导体层之间并且具有其中一个或多个量子阱层和一个或多个量子势垒层交替布置的结构。电子阻挡层 设置在有源层和第二导电类型半导体层之间。 覆盖层设置在有源层和电子阻挡层之间，并阻止掺杂剂元素从第二导电类型半导体层注入到有源层中。
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公开(公告)号：US09000460B2
公开(公告)日：2015-04-07
申请号：US13712656
申请日：2012-12-12
发明人： Nam Sung Kim , Dong Ik Shin , Hyun Wook Shim , Dong Joon Kim , Young Sun Kim , Jung Seung Yang
摘要： A semiconductor light emitting device includes first conductivity type and second conductivity type semiconductor layers, an active layer disposed between the semiconductor layers and having a structure in which one or more quantum well layers and one or more quantum barrier layers are alternately disposed An electron blocking layer is disposed between the active layer and the second conductivity type semiconductor layer. A capping layer is disposed between the active layer and the electron blocking layer and blocking a dopant element from being injected into the active layer from the second conductivity type semiconductor layer.
摘要翻译： 半导体发光器件包括第一导电类型和第二导电类型半导体层，有源层设置在半导体层之间并且具有其中一个或多个量子阱层和一个或多个量子势垒层交替布置的结构。电子阻挡层 设置在有源层和第二导电类型半导体层之间。 覆盖层设置在有源层和电子阻挡层之间，并阻止掺杂剂元素从第二导电类型半导体层注入到有源层中。
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公开(公告)号：US08716694B2
公开(公告)日：2014-05-06
申请号：US13707027
申请日：2012-12-06
发明人： Sang Heon Han , Jeong Wook Lee , Jae Sung Hyun , Jin Young Lim , Dong Joon Kim , Young Sun Kim
CPC分类号： H01L33/0025 , H01L33/06 , H01L33/32
摘要： A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlxInyGa1-x-yN (0≦x
摘要翻译： 半导体发光器件包括：n型和p型半导体层; 以及设置在n型和p型半导体层之间的有源层。 有源层具有多个量子阱层和多个量子势垒层交替设置的结构，其中多个量子阱层由Al x In y Ga 1-x-y N（0＆nlE; x <1,0
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公开(公告)号：US20130146840A1
公开(公告)日：2013-06-13
申请号：US13707027
申请日：2012-12-06
发明人： Sang Heon Han , Jeong Wook Lee , Jae Sung Hyun , Jin Young Lim , Dong Joon Kim , Young Sun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/0025 , H01L33/06 , H01L33/32
摘要： A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlxInyGa1-x-yN (0≦x
摘要翻译： 半导体发光器件包括：n型和p型半导体层; 以及设置在n型和p型半导体层之间的有源层。 有源层具有多个量子阱层和多个量子势垒层交替设置的结构，其中多个量子阱层由Al x In y Ga 1-x-y N（0 @ x <1,0
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