-
1.发明授权Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same 有权化学气相沉积装置及使用其形成半导体外延薄膜的方法公开(公告)号：US09171994B2
公开(公告)日：2015-10-27
申请号：US14518948
申请日：2014-10-20
发明人： Jong Sun Maeng , Young Sun Kim , Hyun Wook Shim , Sung Tae Kim
IPC分类号： H01L21/00 , H01L33/00 , C23C16/455 , C23C16/458
CPC分类号： H01L33/0075 , C23C16/45502 , C23C16/45517 , C23C16/45563 , C23C16/45572 , C23C16/45574 , C23C16/45578 , C23C16/4558 , C23C16/45591 , C23C16/458 , C23C16/4584 , C23C16/4585 , H01L33/0066 , H01L2933/0016
摘要： A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.
摘要翻译： 化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜 晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构 。
-
公开(公告)号：US20130146842A1
公开(公告)日：2013-06-13
申请号：US13712656
申请日：2012-12-12
发明人： Nam Sung KIM , Dong Ik Shin , Hyun Wook Shim , Dong Joon Kim , Young Sun Kim , Jung Seung YANG
IPC分类号： H01L33/06
摘要： A semiconductor light emitting device includes first conductivity type and second conductivity type semiconductor layers, an active layer disposed between the semiconductor layers and having a structure in which one or more quantum well layers and one or more quantum barrier layers are alternately disposed An electron blocking layer is disposed between the active layer and the second conductivity type semiconductor layer. A capping layer is disposed between the active layer and the electron blocking layer and blocking a dopant element from being injected into the active layer from the second conductivity type semiconductor layer.
摘要翻译： 半导体发光器件包括第一导电类型和第二导电类型半导体层，有源层设置在半导体层之间并且具有其中一个或多个量子阱层和一个或多个量子势垒层交替布置的结构。电子阻挡层 设置在有源层和第二导电类型半导体层之间。 覆盖层设置在有源层和电子阻挡层之间，并阻止掺杂剂元素从第二导电类型半导体层注入到有源层中。
-
公开(公告)号：US09000460B2
公开(公告)日：2015-04-07
申请号：US13712656
申请日：2012-12-12
发明人： Nam Sung Kim , Dong Ik Shin , Hyun Wook Shim , Dong Joon Kim , Young Sun Kim , Jung Seung Yang
摘要： A semiconductor light emitting device includes first conductivity type and second conductivity type semiconductor layers, an active layer disposed between the semiconductor layers and having a structure in which one or more quantum well layers and one or more quantum barrier layers are alternately disposed An electron blocking layer is disposed between the active layer and the second conductivity type semiconductor layer. A capping layer is disposed between the active layer and the electron blocking layer and blocking a dopant element from being injected into the active layer from the second conductivity type semiconductor layer.
摘要翻译： 半导体发光器件包括第一导电类型和第二导电类型半导体层，有源层设置在半导体层之间并且具有其中一个或多个量子阱层和一个或多个量子势垒层交替布置的结构。电子阻挡层 设置在有源层和第二导电类型半导体层之间。 覆盖层设置在有源层和电子阻挡层之间，并阻止掺杂剂元素从第二导电类型半导体层注入到有源层中。
-
4.发明授权Method of manufacturing semiconductor device and method of maintaining deposition apparatus 有权制造半导体器件的方法和保持沉积设备的方法公开(公告)号：US09564316B2
公开(公告)日：2017-02-07
申请号：US14578940
申请日：2014-12-22
发明人： Dong Yul Lee , Sang Heon Han , Seung Hyun Kim , Jang Mi Kim , William Solari , Hyun Wook Shim , Suk Ho Yoon
CPC分类号： H01L21/0254 , C23C16/34 , C23C16/4404 , H01L21/02107 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02496 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007
摘要： A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.
摘要翻译： 一种制造半导体器件的方法包括通过向处理室提供铝（Al）源，与处理室中的铝源接触的表面，在处理室的表面上形成铝化合物膜; 在形成铝化合物膜之后，在设置在处理室中的基座上设置晶片; 并在晶片上形成用于半导体器件的薄膜。
-
公开(公告)号：US09112105B1
公开(公告)日：2015-08-18
申请号：US14540969
申请日：2014-11-13
发明人： Jung Seung Yang , Seong Joon Cho , Bun Joon Kim , Dong Gyu Shin , Hyun Wook Shim , Suk Ho Yoon
CPC分类号： H01L33/24 , H01L33/0079 , H01L33/04 , H01L33/32
摘要： The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits.
摘要翻译： 氮化物半导体发光器件包括第一导电型氮化物半导体层，设置在第一导电型氮化物半导体层上的第一超晶格层，设置在第一超晶格层上并具有多个V形凹坑的凹坑形成层 ，第二超晶格层，有源层和设置在有源层上并填充V形凹坑的第二导电型氮化物半导体层。 第二超晶格层设置在凹坑形成层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。 有源层设置在第二超晶格层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。
-
-
-
-
搜索结果
5 条记录 (耗时 0.016 秒)
