公开(公告)号：US09112105B1

公开(公告)日：2015-08-18

申请号：US14540969

申请日：2014-11-13

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jung Seung Yang ,  Seong Joon Cho ,  Bun Joon Kim ,  Dong Gyu Shin ,  Hyun Wook Shim ,  Suk Ho Yoon

IPC分类号： H01L31/00 ,  H01L33/24 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/12

CPC分类号： H01L33/24 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/32

摘要： The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits.

摘要翻译： 氮化物半导体发光器件包括第一导电型氮化物半导体层，设置在第一导电型氮化物半导体层上的第一超晶格层，设置在第一超晶格层上并具有多个V形凹坑的凹坑形成层 ，第二超晶格层，有源层和设置在有源层上并填充V形凹坑的第二导电型氮化物半导体层。 第二超晶格层设置在凹坑形成层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。 有源层设置在第二超晶格层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。

公开(公告)号：US09000460B2

公开(公告)日：2015-04-07

申请号：US13712656

申请日：2012-12-12

申请人： Samsung Electronics Co., Ltd.

发明人： Nam Sung Kim ,  Dong Ik Shin ,  Hyun Wook Shim ,  Dong Joon Kim ,  Young Sun Kim ,  Jung Seung Yang

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/32

摘要： A semiconductor light emitting device includes first conductivity type and second conductivity type semiconductor layers, an active layer disposed between the semiconductor layers and having a structure in which one or more quantum well layers and one or more quantum barrier layers are alternately disposed An electron blocking layer is disposed between the active layer and the second conductivity type semiconductor layer. A capping layer is disposed between the active layer and the electron blocking layer and blocking a dopant element from being injected into the active layer from the second conductivity type semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型和第二导电类型半导体层，有源层设置在半导体层之间并且具有其中一个或多个量子阱层和一个或多个量子势垒层交替布置的结构。电子阻挡层 设置在有源层和第二导电类型半导体层之间。 覆盖层设置在有源层和电子阻挡层之间，并阻止掺杂剂元素从第二导电类型半导体层注入到有源层中。