公开(公告)号：US20190214394A1

公开(公告)日：2019-07-11

申请号：US16351004

申请日：2019-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keun-hee BAI ,  Myeong-cheol KIM ,  Kwan-heum LEE ,  Do-hyoung KIM ,  Jin-wook LEE ,  Seung-mo HA ,  Dong-Hoon KHANG

IPC: H01L27/11 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/08 ,  H01L27/088

CPC classification number: H01L27/1104 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823431 ,  H01L27/0886 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate, a fin active region pattern on the substrate, the fin active region pattern including an upper region and a lower region, a device isolation layer pattern surrounding the fin active region pattern, a gate pattern on the upper region of the fin active region pattern, and a stressor on the lower region of the fin active region pattern, wherein a top surface of the device isolation layer pattern is lower than a top surface of the upper region and higher than a top surface of the lower region.

公开(公告)号：US20170040221A1

公开(公告)日：2017-02-09

申请号：US15196870

申请日：2016-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol KIM ,  Dong-Hoon KHANG ,  Do-Hyoung KIM ,  Seung-Jin MUN ,  Yong-Joon CHOI ,  Seung-Mo HA

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/66 ,  H01L21/3105 ,  H01L21/033 ,  H01L21/308 ,  H01L21/027 ,  H01L21/3115

CPC classification number: H01L21/823431 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/02321 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/0273 ,  H01L21/0275 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31155 ,  H01L29/66795

Abstract: Methods for fabricating a semiconductor device include forming a composite film, forming a rough pattern on the composite film, forming a smooth pattern by subjecting the rough pattern to ion implantation and a plasma treatment, and patterning the composite film using the smooth pattern as a first mask.

Abstract translation: 制造半导体器件的方法包括在复合膜上形成复合膜，形成粗糙图案，通过使粗糙图案经受离子注入和等离子体处理形成平滑图案，并使用平滑图案将复合膜图案化为第一 面具。