公开(公告)号：US09972538B2

公开(公告)日：2018-05-15

申请号：US15196870

申请日：2016-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol Kim ,  Dong-Hoon Khang ,  Do-Hyoung Kim ,  Seung-Jin Mun ,  Yong-Joon Choi ,  Seung-Mo Ha

IPC: H01L21/311 ,  H01L21/8234 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/3105 ,  H01L21/033 ,  H01L21/308 ,  H01L29/66

CPC classification number: H01L21/823431 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/02321 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/0273 ,  H01L21/0275 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31155 ,  H01L29/66795

Abstract: Methods for fabricating a semiconductor device include forming a composite film, forming a rough pattern on the composite film, forming a smooth pattern by subjecting the rough pattern to ion implantation and a plasma treatment, and patterning the composite film using the smooth pattern as a first mask.

公开(公告)号：US10304840B2

公开(公告)日：2019-05-28

申请号：US15084785

申请日：2016-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keun-hee Bai ,  Myeong-cheol Kim ,  Kwan-heum Lee ,  Do-hyoung Kim ,  Jin-wook Lee ,  Seung-mo Ha ,  Dong-Hoon Khang

IPC: H01L27/11 ,  H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165

Abstract: A semiconductor device includes a substrate, a fin active region pattern on the substrate, the fin active region pattern including an upper region and a lower region, a device isolation layer pattern surrounding the fin active region pattern, a gate pattern on the upper region of the fin active region pattern, and a stressor on the lower region of the fin active region pattern, wherein a top surface of the device isolation layer pattern is lower than a top surface of the upper region and higher than a top surface of the lower region.

公开(公告)号：US10224204B1

公开(公告)日：2019-03-05

申请号：US15891391

申请日：2018-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Hoon Khang ,  Dong-Woo Kang ,  Moon-Han Park ,  Ji-Ho Yoo ,  Chong-Kwang Chang

IPC: H01L21/266 ,  H01L21/8238 ,  H01L21/311 ,  H01L21/768

Abstract: An integrated circuit device is manufactured by a method including forming a stacked mask structure including a carbon-containing film and a silicon-containing organic anti-reflective film is on a substrate, forming a silicon-containing organic anti-reflective pattern by etching the silicon-containing organic anti-reflective film, and forming a composite mask pattern including a carbon-containing mask pattern and a profile control liner lining interior surfaces of the carbon-containing mask pattern by etching the carbon-containing film while using the silicon-containing organic anti-reflective pattern as an etch mask. Ions are implanted into the substrate through a plurality of spaces defined by the composite mask pattern.