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公开(公告)号:US20230350609A1
公开(公告)日:2023-11-02
申请号:US18345124
申请日:2023-06-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jesuk YEON , Seontaek KIM , Young-Ho PARK , Eun Ju CHOI , Yonghwa LEE
CPC classification number: G06F3/0679 , G06F3/0659 , G06F3/061 , G06F3/0629 , G06F3/064 , G11C16/04 , G06F12/10 , G11C7/1015 , G11C7/1084 , G11C16/14 , G06F12/0802 , G06F3/0688 , G06F3/167 , G06F3/0611 , H10B43/20 , G11C16/26
Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.
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公开(公告)号:US20230195321A1
公开(公告)日:2023-06-22
申请号:US17866844
申请日:2022-07-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Jin MOON , Chang Hwan KIM , Young-Sik LEE , Eun Ju CHOI
IPC: G06F3/06
CPC classification number: G06F3/0616 , G06F3/0679 , G06F3/0631
Abstract: A storage device and an operating method thereof are provided. Provided is a storage device including, a memory cell, and a storage controller which includes a flash controller that performs a data operation on the memory cell, and a processor that executes an RTOS (Real Time Operating System) for controlling the flash controller, wherein the RTOS communicates with the storage controller and operates in a normal operation mode, the RTOS generates a snapshot data in a debug mode when a defect occurs, the RTOS switches to the debug mode through context switching in the normal operation mode, and the RTOS operates in the normal operation mode, when an urgent work occurs, while performing an operation of generating the snapshot data in the debug mode.
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公开(公告)号:US20210255810A1
公开(公告)日:2021-08-19
申请号:US17307309
申请日:2021-05-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jesuk YEON , Seontaek KIM , Young-Ho PARK , Eun Ju CHOI , Yonghwa LEE
IPC: G06F3/06 , G11C16/04 , G06F12/10 , G11C7/10 , H01L27/11578 , G11C16/14 , G06F12/0802 , G06F3/16
Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.
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