公开(公告)号：US20190205258A1

公开(公告)日：2019-07-04

申请号：US15857857

申请日：2017-12-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Ho PARK ,  Sungkug CHO ,  Byoung Young AHN

IPC: G06F12/1009 ,  G06F12/02

CPC classification number: G06F12/1009 ,  G06F12/0246 ,  G06F2212/2022 ,  G06F2212/7201

Abstract: A storage device includes a controller that receives a value corresponding to data stored in a memory and a key to be referenced to identify the value from a host. In addition, the controller manages partial key-value mapping information indicating a correspondence relationship between a partial key and a value address, and returns information to the host in response to a host request. The information corresponds to a key that includes a same character as a character at a specific position of the received key. The controller to determine the information by determining a partial region of the memory that stores the data based on the partial key-value mapping information and performing a read operation on the partial region to obtain an entire key including the partial key.

公开(公告)号：US20190332283A1

公开(公告)日：2019-10-31

申请号：US16362733

申请日：2019-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyung Chul JANG ,  Jae Ju KIM ,  Young-Ho PARK ,  Chan Soo KIM ,  Ju Pyung LEE

IPC: G06F3/06

Abstract: A data storage device includes a non-volatile memory, including a first region and a second region different from the first region, and a controller which stores first and second data in a first region of the non-volatile memory. The first region of the non-volatile memory includes first and second storage regions. A part of the first data is stored in the first storage region, and another part of the first data is stored in the second storage region. The second data is stored in the second storage region, and an offset value of the second storage region in which the second data is started is stored in the second region of the non-volatile memory.

公开(公告)号：US20230350609A1

公开(公告)日：2023-11-02

申请号：US18345124

申请日：2023-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk YEON ,  Seontaek KIM ,  Young-Ho PARK ,  Eun Ju CHOI ,  Yonghwa LEE

IPC: G06F3/06 ,  G11C16/04 ,  G06F12/10 ,  G11C7/10 ,  G11C16/14 ,  G06F12/0802 ,  G06F3/16 ,  H10B43/20

CPC classification number: G06F3/0679 ,  G06F3/0659 ,  G06F3/061 ,  G06F3/0629 ,  G06F3/064 ,  G11C16/04 ,  G06F12/10 ,  G11C7/1015 ,  G11C7/1084 ,  G11C16/14 ,  G06F12/0802 ,  G06F3/0688 ,  G06F3/167 ,  G06F3/0611 ,  H10B43/20 ,  G11C16/26

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US20200243731A1

公开(公告)日：2020-07-30

申请号：US16507183

申请日：2019-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chi-Goo KANG ,  Young-Kyung KIM ,  Young-Ho PARK ,  Jong-Won PARK ,  Seog-Ho LIM

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/48 ,  H01L33/64

Abstract: A light emitting device package includes a mounting substrate including first and second lower electrode portions separated by a first groove, first and second upper electrode portions separated by a second groove connected to the first groove and disposed on the first and second lower electrode portions respectively, and an insulation support member filling the first groove, a light emitting device mounted on the first and second upper electrode portions of the mounting substrate, a double phosphor film covering an upper surface of the light emitting device, including a phosphor layer and a barrier layer sequentially stacked on each other, and having a thickness of 200 μm or less, and a sealing member on the mounting substrate covering the light emitting device and the double phosphor film.

公开(公告)号：US20210255810A1

公开(公告)日：2021-08-19

申请号：US17307309

申请日：2021-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk YEON ,  Seontaek KIM ,  Young-Ho PARK ,  Eun Ju CHOI ,  Yonghwa LEE

IPC: G06F3/06 ,  G11C16/04 ,  G06F12/10 ,  G11C7/10 ,  H01L27/11578 ,  G11C16/14 ,  G06F12/0802 ,  G06F3/16

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US20170168891A1

公开(公告)日：2017-06-15

申请号：US15374506

申请日：2016-12-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Ho PARK

IPC: G06F11/10 ,  G06F3/06

CPC classification number: G06F11/1044 ,  G06F3/0608 ,  G06F3/064 ,  G06F3/0679 ,  G11C16/26 ,  G11C16/32 ,  G11C16/349

Abstract: An operation method of a nonvolatile memory system is provided. The method includes selecting a source block of memory blocks, performing a cell-counting with respect to the selected source block based on a reference voltage, and performing a reclaim operation on the source block based on the cell-counting result.