公开(公告)号：US20190079702A1

公开(公告)日：2019-03-14

申请号：US15970237

申请日：2018-05-03

申请人： Samsung Electronics Co., Ltd.

发明人： Jesuk YEON ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC分类号： G06F3/06 ,  G06F12/0802 ,  G06F12/10 ,  G11C7/10 ,  H01L27/11578 ,  G11C16/14 ,  G11C16/04

摘要： A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US20230350609A1

公开(公告)日：2023-11-02

申请号：US18345124

申请日：2023-06-30

申请人： Samsung Electronics Co., Ltd.

发明人： Jesuk YEON ,  Seontaek KIM ,  Young-Ho PARK ,  Eun Ju CHOI ,  Yonghwa LEE

IPC分类号： G06F3/06 ,  G11C16/04 ,  G06F12/10 ,  G11C7/10 ,  G11C16/14 ,  G06F12/0802 ,  G06F3/16 ,  H10B43/20

CPC分类号： G06F3/0679 ,  G06F3/0659 ,  G06F3/061 ,  G06F3/0629 ,  G06F3/064 ,  G11C16/04 ,  G06F12/10 ,  G11C7/1015 ,  G11C7/1084 ,  G11C16/14 ,  G06F12/0802 ,  G06F3/0688 ,  G06F3/167 ,  G06F3/0611 ,  H10B43/20 ,  G11C16/26

摘要： A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US20210255810A1

公开(公告)日：2021-08-19

申请号：US17307309

申请日：2021-05-04

申请人： Samsung Electronics Co., Ltd.

发明人： Jesuk YEON ,  Seontaek KIM ,  Young-Ho PARK ,  Eun Ju CHOI ,  Yonghwa LEE

IPC分类号： G06F3/06 ,  G11C16/04 ,  G06F12/10 ,  G11C7/10 ,  H01L27/11578 ,  G11C16/14 ,  G06F12/0802 ,  G06F3/16

摘要： A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.