Abstract:
Disclosed are a substrate inspection apparatus and a substrate processing system. The substrate inspection apparatus includes a sensor module and a jig associated with the sensor module to transfer the sensor module. The sensor module may include a housing having a first surface and a second surface facing each other and including an insertion hole connecting the first and second surfaces to each other, a sensor inserted into the insertion hole to measure a state of the substrate, and a tilting member on the housing to adjust tilt of the housing.
Abstract:
A plasma processing apparatus includes a chamber; a support member in the chamber; a window plate at an upper portion of the chamber and including a window plate body and a fastening hole, wherein the fastening hole includes a lower fastening hole portion and an upper fastening hole portion. and a gas injector including a first body having a plurality of distribution nozzles and a second body having an accommodating groove to which the first body is fastened and a plurality of injection nozzles. The second body includes a first portion disposed inside the upper fastening hole portion, a second portion disposed inside the lower fastening hole portion, and a third portion disposed below the window plate. The second portion of the second body includes a gas hole extending from the accommodating groove to an external side surface of the second portion of the second body.
Abstract:
An electronic device is provided. The electronic device includes a connector including one or more signal terminals and a control circuit electrically connected with the one or more signal terminals. The control circuit may be configured to monitor attachment with an external device through an identification terminal among the one or more signal terminals, identify whether a designated number of, or more, monitoring signals related to attachment with the external device are detected during a designated time, and identify whether there is the attachment with the external device, based on a voltage of a power terminal among the one or more signal terminals, in response to the detection of the monitoring signals being identified.
Abstract:
Plasma processing devices may include a process chamber body, a substrate support unit in a lower portion of the process chamber body, and a window part in an upper portion of the process chamber body. The window part may include a base layer and a surface protection layer on the base layer and configured to face the substrate support unit. The surface protection layer may include an oxide having a columnar structure.
Abstract:
A method of manufacturing a semiconductor device includes: providing a first process gas including oxygen and a second process gas including carbon and fluorine to a process chamber at a first flow rate ratio to etch an etch target layer; and providing the first process gas and the second process gas to the process chamber at a second flow rate ratio to passivate the etch target layer, wherein a flow rate of the first process gas is substantially constant.
Abstract:
A cover plate, a plasma treatment system, and a plasma treatment method therewith are disclosed. The plasma treatment system may include a window, an antenna electrode disposed on the window, and a cover plate disposed between the antenna electrode and the window to cover top and side surfaces of the window.
Abstract:
A cover plate, a plasma treatment system, and a plasma treatment method therewith are disclosed. The plasma treatment system may include a window, an antenna electrode disposed on the window, and a cover plate disposed between the antenna electrode and the window to cover top and side surfaces of the window.