公开(公告)号：US20240269798A1

公开(公告)日：2024-08-15

申请号：US18402471

申请日：2024-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuntae Lee ,  Domin Kim ,  Sungyong Park ,  Jubong Lee ,  Jaemin Jung ,  Hoseop Choi

IPC: B24B37/20

CPC classification number: B24B37/20

Abstract: A conditioning apparatus includes an arm configured to be rotated by an actuator, a gimbaling part disposed at one end of the arm and disposed such that a lower end thereof protrudes outwardly of the arm and an abrasive disc is installed thereon, a frame unit connected to the gimbaling part, a rotation driving unit connected to the gimbaling part and configured to transfer driving force for rotating the abrasive disc, a load applying unit connected to the frame unit and configured to elevate the frame unit, and a universal joint connecting the gimbaling part to the rotation driving unit, wherein the universal joint separates a center of gravity of the rotation driving unit from a center of gravity of the gimbaling part.

公开(公告)号：US20240424627A1

公开(公告)日：2024-12-26

申请号：US18824679

申请日：2024-09-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoseop Choi ,  Minseop Park ,  Jubong Lee ,  Sung Yong Park ,  Kiju Sohn ,  Jaeyoung Eom

IPC: B23Q3/155 ,  B24B53/017 ,  B24D9/08

Abstract: A conditioning disk replacement apparatus includes; a detacher configured to separate a conditioning disk from to a holder, a transfer part configured to transfer the conditioning disk, and a container configured to store the conditioning disk. The detacher includes a detachment body and a rotary part coupled to the detachment body, the rotary part includes a key protruding outward from the rotary part in a first horizontal direction, and the rotary part is configured to rotate about a central axis extending in the first horizontal direction.

公开(公告)号：US10998185B2

公开(公告)日：2021-05-04

申请号：US16294453

申请日：2019-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beomjin Yoo ,  Minhyoung Kim ,  Wonhyuk Jang ,  Hoseop Choi ,  Jeongmin Bang ,  KyuHee Han

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/268

Abstract: Disclosed are a method for cleaning a substrate, an apparatus for cleaning a substrate, and a method for fabricating a semiconductor device using the same. The method may include cleaning a substrate in a wet process, providing a supercritical fluid onto the substrate to remove moisture from the substrate, and cleaning the substrate in a dry process to remove defect particles from a substrate, which are produced by the supercritical fluid.

公开(公告)号：US12145233B2

公开(公告)日：2024-11-19

申请号：US17745618

申请日：2022-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoseop Choi ,  Minseop Park ,  Jubong Lee ,  Sung Yong Park ,  Kiju Sohn ,  Jaeyoung Eom

IPC: B23Q3/155 ,  B24B53/017 ,  B24D9/08

Abstract: A conditioning disk replacement apparatus includes; a detacher configured to separate a conditioning disk from to a holder, a transfer part configured to transfer the conditioning disk, and a container configured to store the conditioning disk. The detacher includes a detachment body and a rotary part coupled to the detachment body, the rotary part includes a key protruding outward from the rotary part in a first horizontal direction, and the rotary part is configured to rotate about a central axis extending in the first horizontal direction.

公开(公告)号：US20240399532A1

公开(公告)日：2024-12-05

申请号：US18524745

申请日：2023-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung Choi ,  Wonuk Yoon ,  Jaemook Kang ,  Keonwoo Kim ,  Sungyong Park ,  Hoseop Choi ,  Seonmin Yun ,  Jitae Lee

IPC: B24B41/047 ,  B24B37/20

Abstract: A polishing head of a CMP apparatus may include a head block, a distribution block and a segmentation type head module. The head block may configured to be positioned over a substrate. The distribution block may be rotatably connected to a lower surface of the head block with respect to a vertical direction. A plurality of pressure lines may be connected to the distribution block and configured to flow a working fluid therethrough. The segmentation type head module may be connected to the lower surface of the distribution block. The segmentation type head module may be configured to rotate with respect to the vertical direction together with the distribution block. The segmentation type head module may be configured to locally pressurize the substrate using the working fluid provided through the pressure lines.

公开(公告)号：US20240282586A1

公开(公告)日：2024-08-22

申请号：US18640481

申请日：2024-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chanyeong Jeong ,  Hoseop Choi ,  Sunggil Kang ,  Dongkyu Shin ,  Sangjin An

IPC: H01L21/324 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/324 ,  H01J37/321 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32724 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67109

Abstract: A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.

公开(公告)号：US11990348B2

公开(公告)日：2024-05-21

申请号：US17184279

申请日：2021-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chanyeong Jeong ,  Hoseop Choi ,  Sunggil Kang ,  Dongkyu Shin ,  Sangjin An

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/324 ,  H01J37/321 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32724 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67109

Abstract: A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.