公开(公告)号：US09991357B2

公开(公告)日：2018-06-05

申请号：US15186982

申请日：2016-06-20

申请人： Samsung Electronics Co., Ltd.

发明人： Jaeyeol Song ,  Wandon Kim ,  Hoonjoo Na ,  Suyoung Bae ,  Hyeok-Jun Son ,  Sangjin Hyun

IPC分类号： H01L27/088 ,  H01L29/51 ,  H01L27/085 ,  H01L21/28 ,  H01L29/49

CPC分类号： H01L29/517 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/085 ,  H01L27/088 ,  H01L27/0886 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor device includes a semiconductor substrate including multiple active regions having a common conductivity type and separate, respective gate electrodes on the separate active regions. Different high-k dielectric layers may be between the separate active regions and the respective gate electrodes on the active regions. Different quantities of high-k dielectric layers may be between the separate active regions and the respective gate electrodes on the active regions. The different high-k dielectric layers may include different work-function adjusting materials.

公开(公告)号：US10312340B2

公开(公告)日：2019-06-04

申请号：US15717324

申请日：2017-09-27

申请人： Samsung Electronics Co., Ltd.

发明人： Wan-Don Kim ,  Oh-Seong Kwon ,  Hoon-Joo Na ,  Hyeok-Jun Son ,  Jae-Yeol Song ,  Sung-Kee Han ,  Sang-Jin Hyun

IPC分类号： H01L29/49 ,  H01L27/088 ,  H01L29/423 ,  H01L21/8234

摘要： A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.

公开(公告)号：US11349007B2

公开(公告)日：2022-05-31

申请号：US17015296

申请日：2020-09-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Nam Gyu Cho ,  Rak Hwan Kim ,  Hyeok-Jun Son ,  Do Sun Lee ,  Won Keun Chung

IPC分类号： H01L29/49 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/28 ,  H01L21/311 ,  H01L29/66

摘要： A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.

公开(公告)号：US11881519B2

公开(公告)日：2024-01-23

申请号：US17826380

申请日：2022-05-27

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Nam Gyu Cho ,  Rak Hwan Kim ,  Hyeok-Jun Son ,  Do Sun Lee ,  Won Keun Chung

IPC分类号： H01L29/49 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L21/28 ,  H01L21/311 ,  H01L29/786

CPC分类号： H01L29/4983 ,  H01L21/28132 ,  H01L21/31111 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/66742 ,  H01L29/78696

摘要： A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.