公开(公告)号：US20160190388A1

公开(公告)日：2016-06-30

申请号：US15063150

申请日：2016-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIN SUB LEE ,  Jung Sub KIM ,  Sam Mook KANG ,  Yeon Woo SEO ,  Han Kyu SEONG ,  Dae Myung CHUN ,  Young Jin CHOI ,  Jae Hyeok HEO

IPC: H01L33/14 ,  H01L33/24 ,  H01L33/02 ,  H01L33/52 ,  H01L33/08 ,  H01L33/42 ,  H01L33/48 ,  H01L33/18 ,  H01L33/00

CPC classification number: H01L33/145 ,  H01L33/002 ,  H01L33/025 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/486 ,  H01L33/52 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.