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公开(公告)号：US20180269360A1
公开(公告)日：2018-09-20
申请号：US15984959
申请日：2018-05-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji Hye YEON , Han Kyu SEONG , Yong II KIM , Jung Sub KIM
IPC: H01L33/50 , F21K9/233 , H01L25/075 , F21Y113/00 , F21V23/00 , F21Y115/10 , F21Y105/10 , F21Y113/13 , H05B33/08 , F21W131/103
Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.
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公开(公告)号：US20150194571A1
公开(公告)日：2015-07-09
申请号：US14454536
申请日：2014-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub LEE , Jung Sub KIM , Sam Mook KANG , Yeon Woo SEO , Han Kyu SEONG , Dae Myung CHUN , Young Jin CHOI , Jae Hyeok HEO
CPC classification number: H01L33/145 , H01L33/002 , H01L33/025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L33/486 , H01L33/52 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
Abstract translation: 提供一种半导体发光器件，其包括第一导电型半导体基底层和多个发光纳米结构，所述多个发光纳米结构在第一导电型半导体基底层上彼此间隔开，每个发光纳米结构包括第一导电性 型半导体芯，有源层，电荷阻挡层和第二导电型半导体层，其中第一导电型半导体芯在晶体学方向上具有不同的第一和第二晶体面。
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公开(公告)号：US20140203293A1
公开(公告)日：2014-07-24
申请号：US14161361
申请日：2014-01-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook HWANG , Jung Sub KIM , Jae Hyeok HEO
CPC classification number: H01L33/10 , H01L33/007 , H01L33/20 , H01L33/24 , H01L33/32
Abstract: A nitride semiconductor light emitting device includes a substrate, a multi-layer structure, a light-transmitting concave-convex structure and a light emitting structure. The multi-layer structure has layers of a first layer and a second layer such that the first and second layers have different refractive indexes and are alternately stacked. The concave-convex structure is disposed in an upper surface of the multi-layer structure and includes a light-transmitting material. The light emitting structure is disposed on the multi-layer structure and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.
Abstract translation: 氮化物半导体发光器件包括衬底，多层结构，透光凹凸结构和发光结构。 多层结构具有第一层和第二层的层，使得第一层和第二层具有不同的折射率并交替堆叠。 凹凸结构设置在多层结构的上表面中并且包括透光材料。 发光结构设置在多层结构上，并且包括第一导电半导体层，有源层和第二导电半导体层。
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公开(公告)号：US20140042454A1
公开(公告)日：2014-02-13
申请号：US13944669
申请日：2013-07-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub LEE , Jung Sub KIM , Cheol Soo SONE
IPC: H01L33/32
CPC classification number: H01L33/325 , H01L33/02 , H01L33/12 , H01L33/32
Abstract: A semiconductor light emitting device includes a substrate, a buffer layer disposed on the substrate, the buffer layer comprising aluminum nitride, a composition grading layer disposed on the buffer layer, the composition grading layer comprising first aluminum nitride and second aluminum nitride, a capping layer disposed on the composition grading layer, and a cladding layer disposed on the capping layer. A composition of the first aluminum nitride and a composition of the second aluminum nitride change gradually in an alternating manner.
Abstract translation: 半导体发光器件包括衬底，设置在衬底上的缓冲层，包括氮化铝的缓冲层，设置在缓冲层上的组合物分级层，包含第一氮化铝和第二氮化铝的组合物分级层，覆盖层 设置在组合物分级层上，以及设置在覆盖层上的包覆层。 第一氮化铝的组成和第二氮化铝的组成以交替的方式逐渐变化。
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5.发明申请公开(公告)号：US20190333964A1
公开(公告)日：2019-10-31
申请号：US16503956
申请日：2019-07-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Sub LEE , Han Kyu SEONG , Yong Il KIM , Jung Sub KIM , Seul Gee LEE
Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20170125631A1
公开(公告)日：2017-05-04
申请号：US15235464
申请日：2016-08-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub LEE , Jung Sub KIM , Han Kyu SEONG , Soon Jo KWON , Ji Hye YEON , Dong Gun LEE
Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer, and including: a plurality of quantum barrier layers; and a plurality of quantum well layers containing indium (In), the plurality of quantum barrier layers and the plurality of quantum well layers being alternately stacked on each other, the plurality of quantum well layers comprising a first quantum well layer and a second quantum well layer; and a second conductivity-type semiconductor layer disposed on the active layer, wherein the first quantum well layer is disposed closer to the first conductivity-type semiconductor layer than the second quantum well layer, wherein the second quantum well layer is disposed closer to the second conductivity-type semiconductor layer than the first quantum well layer, wherein a thickness of the second quantum well layer is greater than a thickness of the first quantum well layer, and wherein each of the first and the second quantum well layers comprises at least one graded layer having a varying amount of In composition, and the at least one graded layer of the second quantum well layer has a greater thickness than the at least one graded layer of the first quantum well layer.
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公开(公告)号：US20170054055A1
公开(公告)日：2017-02-23
申请号：US15147039
申请日：2016-05-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jung Sub KIM , Dong Hyun LEE , Jin Sub LEE , Kyung Wook HWANG , In Su SHIN , Eui Joon YOON , Gun Do LEE , Jeong Hwan JANG
Abstract: A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0≦x+y≦1, 0≦y
Abstract translation: 一种半导体紫外线发射装置，包括：基板; 缓冲层，其设置在所述基板上并且包括多个纳米棒，在所述多个纳米棒之间形成有多个空隙; 第一导电氮化物层，设置在所述缓冲层上并具有第一导电AlGaN层; 设置在第一导电氮化物层上并具有包括Al x In y Ga 1-x-y N（0≤x+y≤1,0≤y<0.15）的量子阱的有源层）。 以及设置在所述有源层上并具有第二导电AlGaN层的第二导电氮化物层，其中所述多个纳米棒满足3.5≤n（λ）×D /λ≤5.0，其中λ表示由所述活性物质产生的光的波长 层，n（λ）表示波长为λ的多个纳米棒的折射率，D表示多个纳米棒的直径。
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8.发明申请公开(公告)号：US20160099376A1
公开(公告)日：2016-04-07
申请号：US14867659
申请日：2015-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae Hyeok HEO , Jin Sub LEE , Young Jin CHOI , Hyun Seong KUM , Ji Hye YEON , Dae Myung CHUN , Jung Sub KIM , Han Kyu SEONG
CPC classification number: H01L33/005 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/24
Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.
Abstract translation: 根据一个示例性实施例，一种制造纳米结构半导体发光器件的方法包括：将第一导电型氮化物半导体材料的纳米孔彼此间隔开，并形成包含活性层的多层壳， 在每个纳米孔的表面上的第二导电型氮化物半导体层。 通过控制源气体通量，源气体流量，室压力，生长温度和生长速率的至少一个工艺参数来形成多层壳体的至少一部分，从而具有更高的膜厚度 均匀性
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公开(公告)号：US20160300978A1
公开(公告)日：2016-10-13
申请号：US15190406
申请日：2016-06-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Sub KIM , Yeon Woo SEO , Dong Gun LEE , Byung Kyu CHUNG , Dae Myung CHUN , Soo Jeong CHOI
CPC classification number: H01L33/007 , B82Y20/00 , F21K9/232 , F21Y2115/10 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0033 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.
Abstract translation: 纳米结构半导体发光器件包括：由第一导电型氮化物半导体材料形成的基极层; 以及设置在所述基底层上以彼此间隔开的多个发光纳米结构，其中所述多个发光纳米结构中的每一个包括：由第一导电型氮化物半导体材料形成的纳米孔，设置在所述基底层上的有源层 包括纳米孔的表面，并且包括量子阱，其被划分为在其厚度方向上具有不同铟（In）组成比的第一和第二区域; 以及设置在所述有源层上的第二导电型半导体层，并且所述第一区域中的In组成比高于所述第二区域中的In组成比。
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公开(公告)号：US20160190388A1
公开(公告)日：2016-06-30
申请号：US15063150
申请日：2016-03-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： JIN SUB LEE , Jung Sub KIM , Sam Mook KANG , Yeon Woo SEO , Han Kyu SEONG , Dae Myung CHUN , Young Jin CHOI , Jae Hyeok HEO
IPC: H01L33/14 , H01L33/24 , H01L33/02 , H01L33/52 , H01L33/08 , H01L33/42 , H01L33/48 , H01L33/18 , H01L33/00
CPC classification number: H01L33/145 , H01L33/002 , H01L33/025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L33/486 , H01L33/52 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
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