公开(公告)号：US20150194571A1

公开(公告)日：2015-07-09

申请号：US14454536

申请日：2014-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Sub LEE ,  Jung Sub KIM ,  Sam Mook KANG ,  Yeon Woo SEO ,  Han Kyu SEONG ,  Dae Myung CHUN ,  Young Jin CHOI ,  Jae Hyeok HEO

IPC: H01L33/14 ,  H01L33/24 ,  H01L33/18 ,  H01L33/02 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L33/145 ,  H01L33/002 ,  H01L33/025 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/486 ,  H01L33/52 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

Abstract translation: 提供一种半导体发光器件，其包括第一导电型半导体基底层和多个发光纳米结构，所述多个发光纳米结构在第一导电型半导体基底层上彼此间隔开，每个发光纳米结构包括第一导电性 型半导体芯，有源层，电荷阻挡层和第二导电型半导体层，其中第一导电型半导体芯在晶体学方向上具有不同的第一和第二晶体面。

公开(公告)号：US20160300978A1

公开(公告)日：2016-10-13

申请号：US15190406

申请日：2016-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Sub KIM ,  Yeon Woo SEO ,  Dong Gun LEE ,  Byung Kyu CHUNG ,  Dae Myung CHUN ,  Soo Jeong CHOI

IPC: H01L33/00 ,  H01L33/52 ,  H01L33/24 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/08

CPC classification number: H01L33/007 ,  B82Y20/00 ,  F21K9/232 ,  F21Y2115/10 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/52 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.

Abstract translation: 纳米结构半导体发光器件包括：由第一导电型氮化物半导体材料形成的基极层; 以及设置在所述基底层上以彼此间隔开的多个发光纳米结构，其中所述多个发光纳米结构中的每一个包括：由第一导电型氮化物半导体材料形成的纳米孔，设置在所述基底层上的有源层 包括纳米孔的表面，并且包括量子阱，其被划分为在其厚度方向上具有不同铟（In）组成比的第一和第二区域; 以及设置在所述有源层上的第二导电型半导体层，并且所述第一区域中的In组成比高于所述第二区域中的In组成比。

公开(公告)号：US20160190388A1

公开(公告)日：2016-06-30

申请号：US15063150

申请日：2016-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIN SUB LEE ,  Jung Sub KIM ,  Sam Mook KANG ,  Yeon Woo SEO ,  Han Kyu SEONG ,  Dae Myung CHUN ,  Young Jin CHOI ,  Jae Hyeok HEO

IPC: H01L33/14 ,  H01L33/24 ,  H01L33/02 ,  H01L33/52 ,  H01L33/08 ,  H01L33/42 ,  H01L33/48 ,  H01L33/18 ,  H01L33/00

CPC classification number: H01L33/145 ,  H01L33/002 ,  H01L33/025 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/486 ,  H01L33/52 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

公开(公告)号：US20160064608A1

公开(公告)日：2016-03-03

申请号：US14838322

申请日：2015-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byung Kyu CHUNG ,  Jung Sub KIM ,  Soo Jeong CHOI ,  Yeon Woo SEO ,  Dong Gun LEE

IPC: H01L33/24 ,  H01L33/12 ,  H01L33/32 ,  H01L33/08 ,  H01L33/06

CPC classification number: H01L33/24 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/18 ,  H01L33/32 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer.

Abstract translation: 提供一种纳米结构半导体发光器件，包括：由第一导电型氮化物半导体形成的基极层; 以及多个发光纳米结构，其设置成在所述基底层上彼此间隔开，其中所述多个发光纳米结构中的每一个包括由第一导电型氮化物半导体形成的纳米孔; 应力控制层，设置在所述纳米孔的表面上，并且包括含有铟的氮化物半导体; 设置在应力控制层上的有源层; 设置在有源层上的第二导电型氮化物半导体层; 以及缺陷阻挡层，其设置在所述应力控制层的至少一部分上，并且包括具有低于所述应力控制层的晶格常数的晶格常数的氮化物半导体层。

公开(公告)号：US20150236202A1

公开(公告)日：2015-08-20

申请号：US14516470

申请日：2014-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Myung CHUN ,  Jung Sub KIM ,  Jin Sub LEE ,  Sam Mook KANG ,  Yeon Woo SEO ,  Han Kyu SEONG ,  Young Jin Choi ,  Jae Hyeok HEO

IPC: H01L33/24 ,  H01L33/62 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/145 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.

Abstract translation: 纳米结构半导体发光器件可以包括第一导电型半导体基底层，掩模层，设置在基底层上并具有暴露基底部分的多个开口，多个发光纳米结构设置在多个开口中 以及设置在掩模层上的多晶硅电流抑制层。 多晶硅电流抑制层的至少一部分设置在第二导电型半导体层的下方。 每个发光纳米结构包括第一导电型半导体纳米孔，有源层和第二导电型半导体层。