公开(公告)号：US20170332861A1

公开(公告)日：2017-11-23

申请号：US15670660

申请日：2017-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun KIM ,  Sang Won LEE ,  Dong Suk KO ,  Jin Hyung PARK ,  Eung Ryeol SEO ,  Hyeon Joon OH ,  Joo Yong LEE ,  Jae Ho CHOI ,  Kwang Su HEO

IPC: A47L9/22 ,  A47L9/00 ,  F04D29/62 ,  F04D29/44 ,  F04D29/42

CPC classification number: A47L9/22 ,  A47L9/0081 ,  A47L2201/00 ,  F04D29/4206 ,  F04D29/444 ,  F04D29/626 ,  F05D2250/52

Abstract: A cleaning device includes an inhalation unit to generate inhalation force to inhale air into a main body, the inhalation unit comprising: an impeller that is rotatable; an impeller cover having an inlet damper formed therein; and a return channel that is coupled to the impeller cover so that the impeller is capable of being accommodated in the return channel and that is directly coupled to the impeller so that air passing through the impeller is capable of being introduced into the return channel, the return channel comprising: an inner frame; and an outer frame at an outer side of the inner frame so as to be spaced apart from the inner frame.

公开(公告)号：US20180366554A1

公开(公告)日：2018-12-20

申请号：US15871055

申请日：2018-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Yeoung CHOI ,  Jun Kyu YANG ,  Young Jin NOH ,  Jae Young AHN ,  Jae Hyun YANG ,  Dong Chul YOO ,  Jae Ho CHOI

IPC: H01L29/51 ,  H01L27/11582 ,  H01L27/11565

CPC classification number: H01L29/513 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

Abstract: A plurality of gate electrodes is stacked on an upper surface of a substrate in a direction perpendicular to an upper surface of the substrate. A channel region penetrates through the plurality of gate electrodes to extend perpendicularly to the upper surface of the substrate. A gate dielectric layer includes a tunneling layer, a charge storage layer and a blocking layer that are sequentially disposed between the channel region and the plurality of gate electrodes. The charge storage layer includes a plurality of doping elements and a plurality of deep level traps generated by the plurality of doping element. A concentration distribution of the plurality of doping elements in a thickness direction of the charge storage layer is non-uniform.