公开(公告)号：US20210108313A1

公开(公告)日：2021-04-15

申请号：US16983142

申请日：2020-08-03

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jae Hyun YANG ,  Sang Yub IE ,  Tae Yong KIM ,  Phil Ouk NAM

IPC分类号： C23C16/455

摘要： A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

公开(公告)号：US20240018657A1

公开(公告)日：2024-01-18

申请号：US18373364

申请日：2023-09-27

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jae Hyun YANG ,  Sang Yub IE ,  Tae Yong KIM ,  Phil Ouk NAM

IPC分类号： C23C16/455 ,  H01L21/67 ,  H01L21/673

CPC分类号： C23C16/45578 ,  C23C16/45595 ,  C23C16/45546 ,  H01L21/67 ,  H01L21/673

摘要： A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

公开(公告)号：US20230272532A1

公开(公告)日：2023-08-31

申请号：US18005849

申请日：2020-12-18

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jae Hyun YANG ,  Tae Yong KIM ,  Sang Yub IE ,  Jung Geun JEE

IPC分类号： C23C16/455 ,  H01L21/67 ,  C23C16/458

CPC分类号： C23C16/45578 ,  H01L21/67098 ,  C23C16/4583 ,  C23C16/45548 ,  H01L21/0228

摘要： There is provided, a semiconductor manufacturing apparatus which reduces loss of a process gas or a precursor transferred from a nozzle to a wafer by improving the injection efficiency of the process gas or the precursor from the nozzle to the substrate. The semiconductor manufacturing apparatus includes a boat on which a substrate is loaded in a first direction, an inner tube which covers the boat, a nozzle which extends in the first direction and through which a process gas to be provided to the substrate moves, a nozzle tube which surrounds the nozzle and comprises a gas injection hole for injecting the process gas toward the substrate, and a nozzle protrusion which is connected to the gas injection hole and extends in a second direction, wherein a shortest distance from an end of the nozzle protrusion to the substrate is greater than 0 mm and less than 9 mm.

公开(公告)号：US20180366554A1

公开(公告)日：2018-12-20

申请号：US15871055

申请日：2018-01-14

申请人： Samsung Electronics Co., Ltd.

发明人： Eun Yeoung CHOI ,  Jun Kyu YANG ,  Young Jin NOH ,  Jae Young AHN ,  Jae Hyun YANG ,  Dong Chul YOO ,  Jae Ho CHOI

IPC分类号： H01L29/51 ,  H01L27/11582 ,  H01L27/11565

CPC分类号： H01L29/513 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： A plurality of gate electrodes is stacked on an upper surface of a substrate in a direction perpendicular to an upper surface of the substrate. A channel region penetrates through the plurality of gate electrodes to extend perpendicularly to the upper surface of the substrate. A gate dielectric layer includes a tunneling layer, a charge storage layer and a blocking layer that are sequentially disposed between the channel region and the plurality of gate electrodes. The charge storage layer includes a plurality of doping elements and a plurality of deep level traps generated by the plurality of doping element. A concentration distribution of the plurality of doping elements in a thickness direction of the charge storage layer is non-uniform.