公开(公告)号：US12293855B2

公开(公告)日：2025-05-06

申请号：US17898416

申请日：2022-08-29

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Younhee Lim ,  Sangyeon Pak ,  Jiwon Son ,  Yong Wan Jin ,  SeungNam Cha ,  Kyungbae Park ,  Chuljoon Heo

IPC: H01B1/06 ,  C23C22/82 ,  H01B1/10 ,  H01L29/45 ,  H10K10/84 ,  H10K30/82 ,  H10K50/828 ,  H10K39/32 ,  H10K65/00

Abstract: A transparent conductive film includes a metal chalcogenide compound doped with a halogen and having a sheet resistance at room temperature of less than or equal to about 60 ohm/sq.

公开(公告)号：US20240087856A1

公开(公告)日：2024-03-14

申请号：US18447479

申请日：2023-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiwon Son ,  Sunggil Kang ,  Kangmin Do ,  Youngsun Kim ,  Younghoo Kim ,  Sangjin An

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32715 ,  C23C16/45565 ,  H01J37/32082 ,  H01J37/32477 ,  H01J37/32633 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A substrate treating apparatus includes a process chamber configured to perform plasma treatment, a substrate support in a lower portion of the process chamber and configured to support a substrate, a showerhead in an upper portion of the process chamber and configured to supply a process gas for the plasma treatment toward the substrate, and a baffle surrounding the substrate support. The substrate support functions as a first electrode for generating plasma, the showerhead and the baffle function as a second electrode for generating the plasma, the baffle has a variable height, and an area of the second electrode varies as a height of the baffle varies.