公开(公告)号：US20170062245A1

公开(公告)日：2017-03-02

申请号：US15142629

申请日：2016-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Pyo Hong ,  Kwang-Nam KIM ,  Sang-Dong KWON ,  Jong-Woo SUN ,  Sang-Rok OH ,  Yong-Moon JANG

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32119 ,  H01L21/67248

Abstract: Provided are substrate processing apparatuses including a temperature measurement unit. The substrate processing apparatus comprises a chamber including a substrate processing region, a dielectric sheet that is disposed on the substrate processing region and includes an insertion hole and a temperature measurement unit that is disposed on the dielectric sheet to measure the temperature of the dielectric sheet, and has a screw portion inserted into the insertion hole, wherein each of the insertion hole and the screw portion has thread helixes meshed with each other.

Abstract translation: 提供了包括温度测量单元的衬底处理设备。 基板处理装置包括：室，包括基板处理区域，设置在基板处理区域上并且包括插入孔的电介质片和设置在电介质片上以测量电介质片材的温度的温度测量单元， 并且具有插入到所述插入孔中的螺纹部分，其中所述插入孔和所述螺纹部分中的每一个具有彼此啮合的螺纹螺旋。

公开(公告)号：US11437222B2

公开(公告)日：2022-09-06

申请号：US17003479

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Pyo Hong ,  Jong-Woo Sun ,  Jung-Mo Sung

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A plasma processing apparatus includes a process chamber having an inner space, an electrostatic chuck in the process chamber and to which a substrate is mounted, a gas injection unit to inject a process gas into the process chamber at a side of the process chamber, a plasma applying unit to transform the process gas injected into the process chamber into plasma, and a plasma adjusting unit disposed around the electrostatic chuck and operative to adjust the density of the plasma across the substrate.

公开(公告)号：US10971382B2

公开(公告)日：2021-04-06

申请号：US16245339

申请日：2019-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Nam Kim ,  Byeong-Hee Kim ,  Jeongryul Kim ,  Hae-Joong Park ,  Jong-Woo Sun ,  Sang-Rok Oh ,  Sung-Wook Jung ,  Nam-Young Cho ,  Jung-Pyo Hong

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/673

Abstract: A semiconductor manufacturing apparatus includes a loadlock module including a loadlock chamber in which a substrate container is received, wherein the loadlock module is configured to switch an internal pressure of the loadlock chamber between atmospheric pressure and a vacuum; and a transfer module configured to transfer a substrate between the substrate container received in the loadlock chamber and a process module for performing a semiconductor manufacturing process on the substrate, wherein the loadlock module includes a purge gas supply unit configured to supply a purge gas into the substrate container through a gas supply line connected to the substrate container; and an exhaust unit configured to discharge a gas in the substrate container through an exhaust line connected to the substrate container.

公开(公告)号：US11037766B2

公开(公告)日：2021-06-15

申请号：US16268790

申请日：2019-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Nam Kim ,  Sung-Yeon Kim ,  Hyung-Jun Kim ,  Jong-Woo Sun ,  Sang-Rok Oh ,  Jung-Pyo Hong

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: A substrate support apparatus includes a substrate stage to support a substrate, and a ground ring assembly along a circumference of the substrate stage, the ground ring assembly including a ground ring body, the ground ring body having a plurality of recesses along a circumferential portion thereof, and a plurality of ground blocks movable to be received into respective recesses of the plurality of recesses, the plurality of ground blocks including a conductive material to be electrically grounded.

公开(公告)号：US10790122B2

公开(公告)日：2020-09-29

申请号：US15907328

申请日：2018-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Pyo Hong ,  Jong-Woo Sun ,  Jung-Mo Sung

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A plasma processing apparatus includes a process chamber having an inner space, an electrostatic chuck in the process chamber and to which a substrate is mounted, a gas injection unit to inject a process gas into the process chamber at a side of the process chamber, a plasma applying unit to transform the process gas injected into the process chamber into plasma, and a plasma adjusting unit disposed around the electrostatic chuck and operative to adjust the density of the plasma across the substrate.

公开(公告)号：US11501987B2

公开(公告)日：2022-11-15

申请号：US17200032

申请日：2021-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-nam Kim ,  Byeong-Hee Kim ,  Jeongryul Kim ,  Hae-Joong Park ,  Jong-Woo Sun ,  Sang-Rok Oh ,  Sung-Wook Jung ,  Nam-Young Cho ,  Jung-Pyo Hong

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/673

Abstract: A semiconductor manufacturing apparatus includes a loadlock module including a loadlock chamber in which a substrate container is received, wherein the loadlock module is configured to switch an internal pressure of the loadlock chamber between atmospheric pressure and a vacuum; and a transfer module configured to transfer a substrate between the substrate container received in the loadlock chamber and a process module for performing a semiconductor manufacturing process on the substrate, wherein the loadlock module includes a purge gas supply unit configured to supply a purge gas into the substrate container through a gas supply line connected to the substrate container; and an exhaust unit configured to discharge a gas in the substrate container through an exhaust line connected to the substrate container.

公开(公告)号：US20210202283A1

公开(公告)日：2021-07-01

申请号：US17200032

申请日：2021-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-nam Kim ,  Byeong-Hee Kim ,  Jeongryul Kim ,  Hae-Joong Park ,  Jong-Woo Sun ,  Sang-Rok Oh ,  Sung-Wook Jung ,  Nam-Young Cho ,  Jung-Pyo Hong

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/673

Abstract: A semiconductor manufacturing apparatus includes a loadlock module including a loadlock chamber in which a substrate container is received, wherein the loadlock module is configured to switch an internal pressure of the loadlock chamber between atmospheric pressure and a vacuum; and a transfer module configured to transfer a substrate between the substrate container received in the loadlock chamber and a process module for performing a semiconductor manufacturing process on the substrate, wherein the loadlock module includes a purge gas supply unit configured to supply a purge gas into the substrate container through a gas supply line connected to the substrate container; and an exhaust unit configured to discharge a gas in the substrate container through an exhaust line connected to the substrate container.

公开(公告)号：US20200020555A1

公开(公告)日：2020-01-16

申请号：US16245339

申请日：2019-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-nam Kim ,  Byeong-Hee Kim ,  Jeongryul Kim ,  Hae-Joong Park ,  Jong-Woo Sun ,  Sang-Rok Oh ,  Sung-Wook Jung ,  Nam-Young Cho ,  Jung-Pyo Hong

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677

Abstract: A semiconductor manufacturing apparatus includes a loadlock module including a loadlock chamber in which a substrate container is received, wherein the loadlock module is configured to switch an internal pressure of the loadlock chamber between atmospheric pressure and a vacuum; and a transfer module configured to transfer a substrate between the substrate container received in the loadlock chamber and a process module for performing a semiconductor manufacturing process on the substrate, wherein the loadlock module includes a purge gas supply unit configured to supply a purge gas into the substrate container through a gas supply line connected to the substrate container; and an exhaust unit configured to discharge a gas in the substrate container through an exhaust line connected to the substrate container.

公开(公告)号：US10062550B2

公开(公告)日：2018-08-28

申请号：US15142629

申请日：2016-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Pyo Hong ,  Kwang-Nam Kim ,  Sang-Dong Kwon ,  Jong-Woo Sun ,  Sang-Rok Oh ,  Yong-Moon Jang

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32119 ,  H01L21/67248

Abstract: Provided are substrate processing apparatuses including a temperature measurement unit. The substrate processing apparatus comprises a chamber including a substrate processing region, a dielectric sheet that is disposed on the substrate processing region and includes an insertion hole and a temperature measurement unit that is disposed on the dielectric sheet to measure the temperature of the dielectric sheet, and has a screw portion inserted into the insertion hole, wherein each of the insertion hole and the screw portion has thread helixes meshed with each other.