公开(公告)号：US20240282829A1

公开(公告)日：2024-08-22

申请号：US18500797

申请日：2023-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Woo Kim ,  Kyoung Woo Lee ,  Min Chan Gwak ,  Guk Hee Kim ,  Sang Cheol Na ,  Anthony Dongick Lee

IPC: H01L29/417 ,  H01L23/48 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L23/481 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate that has first and second surfaces opposite to each other in a first direction, a first fin-type pattern that protrudes in the first direction from the first surface of the substrate and extends in a second direction, a first source/drain pattern on the first fin-type pattern, a first source/drain contact on the first source/drain pattern, a contact connection via that extends in the first direction and is electrically connected to the first source/drain contact, a buried conductive pattern that is in the substrate, is electrically connected to the contact connection via, and has first and second surfaces opposite to each other in the first direction, the first surface of the buried conductive pattern facing the first source/drain contact, and first buried insulating liners that extend along sidewalls and along the first surface of the buried conductive pattern.

公开(公告)号：US20240304513A1

公开(公告)日：2024-09-12

申请号：US18397389

申请日：2023-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Anthony Dongick Lee ,  Min Chan Gwak ,  Guk Hee Kim ,  Young Woo Kim ,  Sang Cheol Na ,  Kyoung Woo Lee

IPC: H01L23/367 ,  H01L21/683 ,  H01L23/528 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L23/3672 ,  H01L21/6835 ,  H01L23/5286 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775 ,  H01L2221/68309

Abstract: A semiconductor device includes an active pattern on a first surface of a substrate and extending in a first direction, a field insulating film on the first surface and a side surface of the active pattern, a gate structure on the active pattern and field insulating film and extending in a second direction intersecting the first direction, a source/drain area on a side surface of the gate structure and contacting the active pattern, and a through-contact extending in a third direction perpendicular to the first and second directions and extending through the field insulating film. The device further includes a buried pattern in the substrate contacting the through-contact, a backside wiring structure on a second surface of the substrate and electrically connected to the buried pattern, and a heat-dissipating structure in the substrate adjacent to the buried pattern. The heat-dissipating structure fills a trench extending from the second surface into the substrate.

公开(公告)号：US11078616B2

公开(公告)日：2021-08-03

申请号：US16462113

申请日：2017-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-Hee Ryu ,  Kyoung Woo Lee ,  Dong-Won Kim ,  Yongjie Jin ,  Jun Hong Park

IPC: D06F37/26 ,  D06F25/00 ,  D06F58/02 ,  D06F58/26

Abstract: Disclosed is a washing machine including a drying function. Here, a height of a bottom end of a dryer disposed above a tub is lower than a height of a top end of the tub to have a space for integrating other devices having additional functions above the tub.

公开(公告)号：US10825766B2

公开(公告)日：2020-11-03

申请号：US16285583

申请日：2019-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Young Kim ,  Kyu Hee Han ,  Sung Bin Park ,  Yeong Gil Kim ,  Jong Min Baek ,  Kyoung Woo Lee ,  Deok Young Jung

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L21/311

Abstract: A semiconductor device includes a lower wiring, an interlayer insulation film above the lower wiring and including a first portion having a first density, and a second portion on the first portion, the first portion and the second portion having a same material, and the second portion having a second density smaller than the first density, an upper wiring in the second portion of the interlayer insulating film, and a via in the first portion of the interlayer insulating film, the via connecting the upper wiring and the lower wiring.

公开(公告)号：US10950541B2

公开(公告)日：2021-03-16

申请号：US16441042

申请日：2019-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soon Gyu Hwang ,  Kyoung Woo Lee ,  YoungWoo Cho ,  Il Sup Kim ,  Su Hyun Bark ,  Young-Ju Park ,  Jong Min Baek ,  Min Huh

IPC: H01L23/48 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device includes a substrate, a first lower wiring line on the substrate, a first insulation layer on the first lower wiring line, a first dielectric barrier layer and a first etch stop layer sequentially stacked on the first insulation layer, a second insulation layer on the first etch stop layer, a first upper wiring line extending through the second insulation layer, the first etch stop layer, and the first dielectric barrier layer, and a first conductive via in the first insulation layer and electrically connecting the first lower wiring line and the first upper wiring line. An upper surface of the first conductive via protrudes above a lower surface of the first upper wiring line.