公开(公告)号：US20170077353A1

公开(公告)日：2017-03-16

申请号：US15092695

申请日：2016-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Joon KIM ,  Young Ho RYU ,  Min Wook CHOI

IPC: H01L33/38 ,  H01L33/14 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/382 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor light emitting device includes a semiconductor stack including a first conductive semiconductor layer including a first surface, a second conductive semiconductor layer including a second surface opposite to the first surface, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a through hole disposed through the semiconductor stack. The semiconductor light emitting device further includes a contact layer connected to the first conductive semiconductor layer, disposed in the through hole, and disposed through the semiconductor stack, a first electrode layer connected to the contact layer, and a second electrode layer disposed on the second surface, and including a pad forming portion on which the semiconductor stack is not disposed. The semiconductor light emitting device further includes an insulating layer disposed between the first electrode layer and the second electrode layer, and an electrode pad disposed on the pad forming portion.

Abstract translation: 一种半导体发光器件包括：半导体堆叠，包括：第一导电半导体层，包括第一表面;第二导电半导体层，包括与第一表面相对的第二表面;有源层，设置在第一导电半导体层和第二导电半导体之间; 层和穿​​过半导体叠层的通孔。 半导体发光器件还包括连接到第一导电半导体层的接触层，设置在通孔中，并且穿过半导体堆叠布置，连接到接触层的第一电极层和设置在第二导电半导体层上的第二电极层 表面，并且包括不设置半导体叠层的焊盘形成部分。 半导体发光器件还包括设置在第一电极层和第二电极层之间的绝缘层和设置在焊盘形成部分上的电极焊盘。

公开(公告)号：US20150129834A1

公开(公告)日：2015-05-14

申请号：US14472089

申请日：2014-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo CHA ,  Dong Hoon LEE ,  Min Wook CHOI ,  Kyung Wook HWANG

IPC: H01L33/24 ,  H01L33/42 ,  H01L33/06

CPC classification number: H01L33/24 ,  H01L33/18 ,  H01L33/42 ,  H01L33/44

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer, a plurality of light emitting nanostructures disposed on the first conductivity-type semiconductor base layer to be spaced apart from one another, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and a filling layer including a refractive portion disposed between the light emitting nanostructures and a cover portion filled between the light emitting nanostructures and enclosing the refractive portion.

Abstract translation: 提供了一种半导体发光器件，其包括第一导电型半导体基底层，设置在第一导电型半导体基底层上彼此间隔开的多个发光纳米结构，每个发光纳米结构包括第一导电性 以及填充层，其包括设置在发光纳米结构之间的折射部分和填充在发光纳米结构之间并包围折射部分的覆盖部分。

公开(公告)号：US20160064609A1

公开(公告)日：2016-03-03

申请号：US14838635

申请日：2015-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Goo CHA ,  Jin Bock LEE ,  Dong Kuk LEE ,  Dong Hyun CHO ,  Min Wook CHOI

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/54 ,  H01L33/38 ,  H01L33/32 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/38 ,  H01L2224/48091 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructures have different shapes.

Abstract translation: 纳米结构半导体发光器件可以包括具有第一和第二区域并由第一导电型半导体材料形成的基极层; 设置在基底层上的多个发光纳米结构，每个发光纳米结构包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在纳米孔上的有源层和第二导电型半导体层; 设置在所述发光纳米结构上以与所述第二导电类型半导体层连接的接触电极; 连接到所述基底层的第一电极; 以及覆盖设置在多个发光纳米结构中的第二区域中的发光纳米结构中的至少一个发光纳米结构的接触电极的一部分的第二电极，其中设置在第二区域中的发光纳米结构和设置在第一区域中的发光纳米结构 多个发光纳米结构中的区域具有不同的形状。

公开(公告)号：US20160013364A1

公开(公告)日：2016-01-14

申请号：US14607920

申请日：2015-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo CHA ,  Ki Hyung LEE ,  Wan Tae LIM ,  Geun Woo KO ,  Min Wook CHOI

IPC: H01L33/24 ,  H01L33/08 ,  H01L33/00 ,  H01L33/54 ,  H01L33/14 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/24 ,  F21K9/232 ,  F21S41/147 ,  F21S41/192 ,  F21Y2101/00 ,  F21Y2115/10 ,  H01L33/08 ,  H01L33/18 ,  H01L33/22 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method of manufacturing a nanostructure semiconductor light emitting device may includes preparing a mask layer by sequentially forming a first insulating layer and a second insulating layer on a base layer configured of a first conductivity-type semiconductor, forming a plurality of openings penetrating the mask layer, growing a plurality of nanorods in the plurality of openings, removing the second insulating layer, preparing a plurality of nanocores by re-growing the plurality of nanorods, and forming nanoscale light emitting structures by sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores. The plurality of openings may respectively include a mold region located in the second insulating layer, and the mold region includes at least one curved portion of which an inclination of a side surface varies according to proximity to the first insulating layer.

Abstract translation: 制造纳米结构半导体发光器件的方法可以包括通过在由第一导电型半导体构成的基底层上依次形成第一绝缘层和第二绝缘层来制备掩模层，形成穿过掩模层的多个开口 在所述多个开口中生长多个纳米棒，去除所述第二绝缘层，通过重新生长所述多个纳米棒来制备多个纳米孔，以及通过依次生长活性层和第二导电类型形成纳米尺度的发光结构 半导体层在多个纳米孔的表面上。 多个开口可以分别包括位于第二绝缘层中的模具区域，并且模具区域包括至少一个弯曲部分，其侧表面的倾斜度根据与第一绝缘层的接近度而变化。