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公开(公告)号：US20200243723A1
公开(公告)日：2020-07-30
申请号：US16851354
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Il KIM , Hyong Sik WON , Wan Tae LIM , Nam Goo CHA
IPC: H01L33/50 , H01L25/075 , H01L33/44 , H01L33/08 , H01L33/32
Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.
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2.发明申请公开(公告)号：US20170294479A1
公开(公告)日：2017-10-12
申请号：US15413079
申请日：2017-01-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam Goo CHA , Yong Il KIM , Young Soo PARK
CPC classification number: H01L27/156 , H01L25/0655 , H01L25/0753 , H01L33/0012 , H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/50 , H01L33/507 , H01L33/52 , H01L33/62 , H01L2933/0041 , H01L2933/005 , H01L2933/0066
Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.
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公开(公告)号：US20160013366A1
公开(公告)日：2016-01-14
申请号：US14630431
申请日：2015-02-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook HWANG , Jung Sung KIM , Nam Goo CHA
Abstract: A nanostructure semiconductor light-emitting device includes a base layer formed of a first conductivity-type semiconductor, a first material layer disposed on the base layer and including a plurality of openings, a plurality of light-emitting nanostructures, each of which extends through each of the plurality of openings and includes a nanocore formed of a first conductivity-type semiconductor, an active layer and a second conductivity-type semiconductor shell layer, sequentially disposed on the nanocore, a filling layer disposed on the first material layer, wherein the filling layer fills spaces between the plurality of light-emitting nanostructures and a portion of each of the plurality of light-emitting nanostructures is exposed by the filling layer, a second conductivity-type semiconductor extension layer disposed on the filling layer and covering the exposed portion of each of the plurality of light-emitting nanostructures, and a contact electrode layer disposed on the second conductivity-type semiconductor extension layer.
Abstract translation: 纳米结构半导体发光器件包括由第一导电型半导体形成的基极层，设置在基底层上并包括多个开口的第一材料层，多个发光纳米结构，每个发光纳米结构延伸穿过每个 并且包括由依次设置在纳米孔上的第一导电型半导体，有源层和第二导电型半导体外壳层形成的纳米孔，设置在第一材料层上的填充层，其中填充物 多个发光纳米结构的多个发光纳米结构体的一部分与多个发光纳米结构体的一部分之间的填充层由填充层露出，第二导电型半导体延伸层设置在填充层上并覆盖 所述多个发光纳米结构中的每一个以及设置在所述第二配线上的接触电极层 导电型半导体延伸层。
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公开(公告)号：US20140246647A1
公开(公告)日：2014-09-04
申请号：US14165168
申请日：2014-01-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Dong Ho KIM , Geon Wook YOO
CPC classification number: H01L33/06 , H01L33/005 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/36 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0025
Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, and a plurality of light emitting nanostructures. The base layer includes a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. The light emitting nanostructures are respectively disposed on the exposed regions of the base layer and include a plurality of nanocores having a first conductivity type semiconductor and having side surfaces provided as the same crystal planes. The light emitting nanostructures include an active layer and a second conductivity type semiconductor layer sequentially disposed on surfaces of the nanocores. Upper surfaces of the nanocores are provided as portions of upper surfaces of the light emitting nanostructures, and the upper surfaces of the light emitting nanostructures are substantially planar with each other.
Abstract translation: 纳米结构半导体发光器件包括基极层，绝缘层和多个发光纳米结构。 基极层包括第一导电型半导体。 绝缘层设置在基底层上并具有多个开口，基底层的区域暴露在该开口中。 发光纳米结构分别设置在基层的露出区域上，并且包括多个具有第一导电型半导体的纳米孔，并具有设置为相同晶面的侧面。 发光纳米结构包括依次设置在纳米孔表面上的有源层和第二导电类型半导体层。 纳米孔的上表面被提供为发光纳米结构的上表面的部分，并且发光纳米结构的上表面彼此基本上是平面的。
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公开(公告)号：US20170250318A1
公开(公告)日：2017-08-31
申请号：US15337215
申请日：2016-10-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Sung Hyun SIM , Wan tae LIM , Hye Seok NOH , Hanul YOO
CPC classification number: H01L33/505 , H01L27/153 , H01L33/504 , H01L33/60 , H01L2933/0033 , H01L2933/0041
Abstract: A method of manufacturing a light emitting device package is provided. The method includes preparing a film strip including one or more light blocking regions and one or more wavelength conversion regions, preparing light emitting devices, each including one or more light emitting regions, bonding the film strip to the light emitting devices so as to dispose the one or more wavelength conversion regions on the one or more light emitting regions of each of the light emitting devices, and cutting the film strip and the light emitting devices into individual device units.
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Patent Agency Ranking
公开(公告)号：US20170148771A1
公开(公告)日：2017-05-25
申请号：US15226209
申请日：2016-08-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam Goo CHA , Yong II KIM , Wan tae LIM
IPC: H01L25/075 , H01L33/62
CPC classification number: H01L25/0753 , H01L33/20 , H01L33/38 , H01L33/505 , H01L33/62 , H05K1/00 , H05K1/181 , H05K1/183 , H05K3/301 , H05K3/325 , H05K2201/083 , H05K2201/0939 , H05K2201/09472 , H05K2201/10106 , H05K2201/10674 , H05K2201/209 , H05K2203/104 , H05K2203/168 , Y02P70/611
Abstract: A light source module includes a circuit board having a plurality of chip mounting regions, the plurality of chip mounting regions respectively having at least one connection pad; at least one alignment component respectively disposed on the plurality of chip mounting regions, and having a convex or concave shape; and a plurality of LED chips respectively mounted on the plurality of chip mounting regions, respectively having at least one electrode electrically connected to the at least one connection pad, and respectively coupled to the at least one alignment component.
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公开(公告)号：US20170092820A1
公开(公告)日：2017-03-30
申请号：US15279864
申请日：2016-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Il KIM , Hyong Sik WON , Wan Tae LIM , Nam Goo CHA
CPC classification number: H01L33/50 , H01L25/0753 , H01L27/156 , H01L33/08 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/58
Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.
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8.发明申请公开(公告)号：US20150372195A1
公开(公告)日：2015-12-24
申请号：US14838430
申请日：2015-08-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook HWANG , Han Kyu SEONG , Nam Goo CHA
CPC classification number: H01L33/24 , H01L33/005 , H01L33/08 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.
Abstract translation: 一种半导体发光器件，包括：衬底; 由第一导电型半导体制成的基底层，设置在基板上; 多个纳米尺度的发光单元，其设置在所述基底层的上表面的区域中，并且包括从所述基底层的上表面突出的第一导电型纳米半导体层，设置在所述第一导电性的纳米活性层 型纳米半导体层和设置在纳米活性层上的第二导电型纳米半导体层; 以及设置在基层的上表面的不同区域并具有层叠有源层的发光层叠体。
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9.发明申请SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE 审中-公开半导体发光器件和半导体发光器件封装公开(公告)号：US20150221825A1
公开(公告)日：2015-08-06
申请号：US14521423
申请日：2014-10-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Geun-Woo KO , Nam Goo CHA , Hyun Seong KUM
CPC classification number: H01L33/24 , H01L33/382 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2224/16225 , H01L2224/16245
Abstract: A semiconductor light emitting device includes a substrate, a first conductivity-type semiconductor base layer disposed on the substrate, a plurality of light emitting nanostructures, a transparent electrode layer, and a first electrode. The plurality of light emitting nanostructures are disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer and include a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer, respectively. The transparent electrode layer is disposed on the second conductivity-type semiconductor layer and between the plurality of light emitting nanostructures. The first electrode is electrically connected to the second conductivity-type semiconductor layer by penetrating the substrate.
Abstract translation: 半导体发光器件包括衬底，设置在衬底上的第一导电型半导体基底层，多个发光纳米结构，透明电极层和第一电极。 多个发光纳米结构被设置为在第一导电型半导体基底层上彼此间隔开，并且分别包括第一导电型半导体芯，有源层和第二导电型半导体层。 透明电极层设置在第二导电型半导体层上，并且在多个发光纳米结构之间。 第一电极通过穿透基板与第二导电型半导体层电连接。
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公开(公告)号：US20160064609A1
公开(公告)日：2016-03-03
申请号：US14838635
申请日：2015-08-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam Goo CHA , Jin Bock LEE , Dong Kuk LEE , Dong Hyun CHO , Min Wook CHOI
CPC classification number: H01L33/24 , H01L33/0075 , H01L33/08 , H01L33/38 , H01L2224/48091 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2933/0016 , H01L2933/0025 , H01L2924/00014 , H01L2924/00012
Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructures have different shapes.
Abstract translation: 纳米结构半导体发光器件可以包括具有第一和第二区域并由第一导电型半导体材料形成的基极层; 设置在基底层上的多个发光纳米结构，每个发光纳米结构包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在纳米孔上的有源层和第二导电型半导体层; 设置在所述发光纳米结构上以与所述第二导电类型半导体层连接的接触电极; 连接到所述基底层的第一电极; 以及覆盖设置在多个发光纳米结构中的第二区域中的发光纳米结构中的至少一个发光纳米结构的接触电极的一部分的第二电极，其中设置在第二区域中的发光纳米结构和设置在第一区域中的发光纳米结构 多个发光纳米结构中的区域具有不同的形状。
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