公开(公告)号：US20170365739A1

公开(公告)日：2017-12-21

申请号：US15410033

申请日：2017-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Won PARK ,  Yong Min KWON ,  Hyung Kun KIM ,  Dong Kuk LEE ,  Dae Yeop HAN

IPC: H01L33/22 ,  H01L33/06 ,  H01L33/32 ,  H01L27/15 ,  H01L33/62 ,  H01L33/54 ,  H01L33/50 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L27/153 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/325 ,  H01L33/38 ,  H01L33/505 ,  H01L33/54 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2933/005

Abstract: A semiconductor light emitting device package includes a light emitting structure having a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first surface, and a second surface, a first electrode and a second electrode disposed on the second surface of the light emitting structure; an insulating layer, a first metal pad and a second metal pad disposed on the insulating layer, and each having a surface with a first fine uneven pattern so as to have a first surface roughness, a first bonding pad and a second bonding pad disposed on the first metal pad and the second metal pad, respectively, and each having a surface with a second fine uneven pattern so as to have a second surface roughness, and an encapsulant encapsulating the first bonding pad, the second bonding pad, the first metal pad, and the second metal pad.

公开(公告)号：US20170069681A1

公开(公告)日：2017-03-09

申请号：US15200616

申请日：2016-07-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Kuk LEE ,  Yong Min KWON ,  Hyung Kun KIM

IPC: H01L27/15 ,  H01L33/54 ,  H01L33/20 ,  H01L33/46 ,  H01L33/60 ,  H01L33/50 ,  H01L33/62 ,  H01L33/38

CPC classification number: H01L27/153 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  H01L33/46 ,  H01L33/505 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066

Abstract: A light emitting device package and a method of manufacturing the light emitting device package are provided. The light emitting package includes a light emitting stack including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer sequentially stacked, and having a first surface provided by the first conductivity-type semiconductor layer and a second surface provided by the second conductivity-type semiconductor layer and opposing the first surface; a first electrode structure disposed on a portion of the first surface and connected to the first conductivity-type semiconductor layer; a sealing portion disposed adjacent to the light emitting stack; an insulating layer disposed between the light emitting stack and the sealing portion; and a first metal pad disposed on the second surface and passing through the insulating layer at a side of the light emitting stack to connect to the first electrode structure.

Abstract translation: 提供发光器件封装和制造发光器件封装的方法。 发光封装包括发光堆叠，其包括依次层叠的第一导电型半导体层，有源层，第二导电型半导体层，并且具有由第一导电型半导体层提供的第一表面和第二表面 由所述第二导电型半导体层提供并与所述第一表面相对; 第一电极结构，设置在所述第一表面的一部分上并连接到所述第一导电型半导体层; 设置在所述发光叠层附近的密封部; 设置在所述发光层与所述密封部之间的绝缘层; 以及第一金属焊盘，其设置在所述第二表面上并且在所述发光叠层的一侧穿过所述绝缘层以连接到所述第一电极结构。

公开(公告)号：US20160351755A1

公开(公告)日：2016-12-01

申请号：US15166254

申请日：2016-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Kuk LEE ,  Yong Min KWON ,  Hyung Kun KIM ,  Dae Yeop HAN

IPC: H01L33/46 ,  H01L33/00 ,  H01L33/38 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/60 ,  H01L33/007 ,  H01L33/32 ,  H01L33/382 ,  H01L33/486 ,  H01L33/56 ,  H01L2933/0016 ,  H01L2933/005

Abstract: In one embodiment, a light emitting device package includes a light emitting device including a substrate and a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, stacked on the substrate; a reflective conductive layer provided on the light emitting structure; and a first electrode and a second electrode overlying the reflective conductive layer separated from each other in a first region. The first electrode and the second electrode are electrically insulated from the reflective metal layer and penetrate through the reflective metal layer to be electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively.

Abstract translation: 在一个实施例中，发光器件封装包括发光器件，其包括衬底和堆叠在衬底上的包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 设置在发光结构上的反射导电层; 以及覆盖在第一区域中彼此分离的反射导电层的第一电极和第二电极。 第一电极和第二电极与反射金属层电绝缘，并且穿过反射金属层分别电连接到第一导电类型半导体层和第二导电类型半导体层。

公开(公告)号：US20160064607A1

公开(公告)日：2016-03-03

申请号：US14698717

申请日：2015-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geon Wook YOO ,  Sung Hyun SIM ,  Dong Kuk LEE ,  Hye Seok NOH

IPC: H01L33/24 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/08 ,  H01L33/145 ,  H01L33/18 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: A nanostructure semiconductor light emitting device may include: a base layer formed of a first conductivity-type semiconductor material; an insulating layer disposed on the base layer and having a plurality of openings exposing portions of the base layer; a plurality of nanocores disposed on the exposed portions of the base layer and formed of a first conductivity-type semiconductor material, each of which including a tip portion having a crystal plane different from that of a side surface thereof; a first high resistance layer disposed on the tip portion of the nanocore and formed of an oxide containing an element which is the same as at least one of elements constituting the nanocore; an active layer disposed on the first high resistance layer and the side surface of the nanocore; and a second conductivity-type semiconductor layer disposed on the active layer.

Abstract translation: 纳米结构半导体发光器件可以包括：由第一导电型半导体材料形成的基极层; 绝缘层，其设置在所述基底层上并且具有暴露所述基底层的部分的多个开口; 多个纳米孔，其设置在所述基底层的所述露出部分上并由第一导电型半导体材料形成，所述第一导电型半导体材料包括具有不同于其侧表面的晶面的尖端部分; 第一高电阻层，设置在纳米孔的尖端部分上，由含有与构成纳米孔的元素中至少一个元素相同的元素的氧化物形成; 设置在所述第一高电阻层和所述纳米孔的侧表面上的有源层; 以及设置在有源层上的第二导电型半导体层。

公开(公告)号：US20160064609A1

公开(公告)日：2016-03-03

申请号：US14838635

申请日：2015-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Goo CHA ,  Jin Bock LEE ,  Dong Kuk LEE ,  Dong Hyun CHO ,  Min Wook CHOI

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/54 ,  H01L33/38 ,  H01L33/32 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/38 ,  H01L2224/48091 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructures have different shapes.

Abstract translation: 纳米结构半导体发光器件可以包括具有第一和第二区域并由第一导电型半导体材料形成的基极层; 设置在基底层上的多个发光纳米结构，每个发光纳米结构包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在纳米孔上的有源层和第二导电型半导体层; 设置在所述发光纳米结构上以与所述第二导电类型半导体层连接的接触电极; 连接到所述基底层的第一电极; 以及覆盖设置在多个发光纳米结构中的第二区域中的发光纳米结构中的至少一个发光纳米结构的接触电极的一部分的第二电极，其中设置在第二区域中的发光纳米结构和设置在第一区域中的发光纳米结构 多个发光纳米结构中的区域具有不同的形状。

公开(公告)号：US20160049553A1

公开(公告)日：2016-02-18

申请号：US14828004

申请日：2015-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun SIM ,  Geon Wook YOO ,  Mi Hyun KIM ,  Dong Hoon LEE ,  Jin Bock LEE ,  Je Won KIM ,  Hye Seok NOH ,  Dong Kuk LEE

IPC: H01L33/24 ,  H01L33/14 ,  H01L33/08

CPC classification number: H01L33/24 ,  F21K9/232 ,  F21Y2115/10 ,  H01L33/08 ,  H01L33/38

Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.

Abstract translation: 纳米结构半导体发光器件可以包括：具有第一和第二区域并由第一导电型半导体材料形成的基极层; 多个发光纳米结构，其设置在所述基底层的上表面上，每一个包括由所述第一导电型半导体材料形成的纳米孔，以及依次设置在所述纳米孔上的有源层和第二导电型半导体层; 以及设置在所述多个发光纳米结构上的接触电极，其中设置在所述第一区域上的每个发光纳米结构的末端部分可以不被所述接触电极覆盖，并且每个所述发光纳米结构的顶端部分设置在所述第一区域上 第二区域可以被接触电极覆盖。