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公开(公告)号:US11054462B2
公开(公告)日:2021-07-06
申请号:US15791738
申请日:2017-10-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joon Woo Cho , Yun Ju Kwon , Sang Woo Kim
IPC: G01R31/28 , G06F1/3206 , G06F1/3209 , G06F1/3296 , G06F1/26
Abstract: A semiconductor device and a method of testing the same are provided. A semiconductor device includes a Design Under Test (DUT), a processing core configured to execute test software to determine an optimum operating voltage of the DUT, and a protection circuit configured to block the transmission of undefined signals generated by the DUT while the processing core executes the test software.
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公开(公告)号:US10923021B2
公开(公告)日:2021-02-16
申请号:US16876168
申请日:2020-05-18
Inventor: Jong Kon Bae , Dong Hwy Kim , Sang Woo Kim , Jung Hee Yun , Yo Han Lee , Dong Kyoon Han , Yun Pyo Hong , Hong Kook Lee
Abstract: An electronic device is provided. The electronic device may include a display, a processor operatively connected with the display and configured to generate external reference time information, a display driver integrated circuit configured to periodically or randomly receive the external reference time information from the processor, wherein the display driver integrated circuit is configured to generate internal time information based on an internal clock, to output a clock image corresponding to the internal time information on the display, and if a time error between the external reference time information and the internal time information occurs during the outputting of the clock image, to output the internal time information, the time error of which is corrected, on the display.
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公开(公告)号:US10769085B2
公开(公告)日:2020-09-08
申请号:US15943647
申请日:2018-04-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joon-Woo Cho , Yun Ju Kwon , Sang Woo Kim , Woo-Jin Kim
IPC: G06F11/07 , G06F13/362 , G06F13/16 , G06F13/10 , G06F11/30
Abstract: A bus system is provided. A bus system includes a slave functional block and a master functional block. The master functional block transmits a first command to the slave functional block. The slave functional block includes a first bus protector. The first bus protector receives the first command on behalf of the slave functional block and transmits a dummy signal corresponding to the first command to the master functional block in response to the slave functional block being in a state of not being able to receive the first command or not being able to transmit a response signal corresponding to the first command.
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公开(公告)号:US20190102332A1
公开(公告)日:2019-04-04
申请号:US15943647
申请日:2018-04-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joon-Woo Cho , Yun Ju Kwon , Sang Woo Kim , Woo-Jin Kim
IPC: G06F13/362 , G06F13/16 , G06F13/10
Abstract: A bus system is provided. A bus system includes a slave functional block and a master functional block. The master functional block transmits a first command to the slave functional block. The slave functional block includes a first bus protector. The first bus protector receives the first command on behalf of the slave functional block and transmits a dummy signal corresponding to the first command to the master functional block in response to the slave functional block being in a state of not being able to receive the first command or not being able to transmit a response signal corresponding to the first command.
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公开(公告)号:US11714122B2
公开(公告)日:2023-08-01
申请号:US17338868
申请日:2021-06-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joon Woo Cho , Yun Ju Kwon , Sang Woo Kim
IPC: G06F1/32 , G01R31/28 , G06F1/3206 , G06F1/3209 , G06F1/3296 , G06F1/26
CPC classification number: G01R31/2853 , G06F1/26 , G06F1/3206 , G06F1/3209 , G06F1/3296 , G01R31/2884
Abstract: A semiconductor device and a method of testing the same are provided. A semiconductor device includes a Design Under Test (DUT), a processing core configured to execute test software to determine an optimum operating voltage of the DUT, and a protection circuit configured to block the transmission of undefined signals generated by the DUT while the processing core executes the test software.
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公开(公告)号:US10587265B2
公开(公告)日:2020-03-10
申请号:US16107424
申请日:2018-08-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yoo Seok Shon , Sang Woo Kim , Byung Tak Lee , Yun Ju Kwon , Joon-Woo Cho
IPC: G06F1/32 , H03K19/00 , G06F1/06 , G06F1/3234 , G06F1/3287
Abstract: Provided are a semiconductor device and a semiconductor system. A semiconductor device includes a hardware auto clock gating (HWACG) logic configured to provide clock gating of an intellectual property (IP) block; and a memory power controller configured to perform power gating of a memory electrically connected with the IP block, based on the HWACG logic providing the clock gating for the IP block. The HWACG logic includes a first clock source configured to provide a first clock signal; a second clock source configured to receive the first clock signal provided by the first clock source, and provide a second clock signal to the IP block; a first clock control circuit configured to control the first clock source; and a second clock control circuit configured to transmit a clock request to the first clock control circuit, and control the second clock source, based on an operation state of the IP block.
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公开(公告)号:US09985610B2
公开(公告)日:2018-05-29
申请号:US15414787
申请日:2017-01-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sang Woo Kim , Suk Nam Kwon , Jin Ook Song
CPC classification number: H03K3/0375 , H03K3/012
Abstract: A semiconductor device includes a power gating circuit including a synchronous reset flip-flop, a retention circuit including a retention flip-flop, a clock management circuit configured to provide an operation clock to the power gating circuit and the retention circuit, and a power management circuit configured to transmit a power gating control signal to the power gating circuit, the retention circuit, and the clock management circuit. The power gating circuit is activated to signal entry to a power reduction mode. The retention circuit retains states of the semiconductor device. Upon exit from the power reduction mode, the power management circuit is configured to complete a reset operation of the power gating circuit before signaling the retention circuit to cancel a retention state and restore the states of the semiconductor device.
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