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公开(公告)号：US11506741B2
公开(公告)日：2022-11-22
申请号：US17136074
申请日：2020-12-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Suck-Hyun Nam , Min-Sung Kil , Hyoung-Taek Lim , Sang-Hoon Kim
Abstract: A method and apparatus are for monitoring a secondary power device and for accurately checking a state of the secondary power device, and an electronic system includes the apparatus. The method of monitoring a secondary power device includes setting a first reference parameter by using a voltage of at least one capacitor of the secondary power device, setting a second reference parameter by using the voltage of the at least one capacitor and the first reference parameter, and setting a reference level for checking of the state of the secondary power device by using the second reference parameter, wherein the reference level is used in checking of the state of the secondary power device.
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公开(公告)号：US10908249B2
公开(公告)日：2021-02-02
申请号：US16298753
申请日：2019-03-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Suck-Hyun Nam , Min-Sung Kil , Hyoung-Taek Lim , Sang-Hoon Kim
Abstract: A method and apparatus for monitoring a secondary power device, for accurately checking a state of the secondary power device, and an electronic system including the apparatus are provided. The method of monitoring a secondary power device includes: setting a first reference parameter by using a voltage of at least one capacitor of the secondary power device; setting a second reference parameter by using the voltage of the at least one capacitor and the first reference parameter; and setting a reference level for checking of the state of the secondary power device by using the second reference parameter, wherein the reference level is used in checking of the state of the secondary power device.
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公开(公告)号：US20200077055A1
公开(公告)日：2020-03-05
申请号：US16392916
申请日：2019-04-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Hoon Kim , Byungjun Park
Abstract: An image sensor is disclosed. The image sensor includes a substrate including an active region and a dummy region, a plurality of unit pixels on the active region, a transparent conductive layer on a first surface of the substrate, a light-blocking layer on the transparent conductive layer and electrically connected to the transparent conductive layer, the light-blocking layer having a grid structure adjacent light transmission regions, and a pad electrically connected to the light-blocking layer, on the dummy region.
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公开(公告)号：US11323667B2
公开(公告)日：2022-05-03
申请号：US17170008
申请日：2021-02-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Hoon Kim , Byungjun Park
Abstract: An image sensor is disclosed. The image sensor includes a substrate including an active region and a dummy region, a plurality of unit pixels on the active region, a transparent conductive layer on a first surface of the substrate, a light-blocking layer on the transparent conductive layer and electrically connected to the transparent conductive layer, the light-blocking layer having a grid structure adjacent light transmission regions, and a pad electrically connected to the light-blocking layer, on the dummy region.
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公开(公告)号：US12237037B2
公开(公告)日：2025-02-25
申请号：US18151784
申请日：2023-01-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Hoon Kim , Sungyong Cho
Abstract: A reference voltage generation device includes a noise information generation circuit configured to generate power noise information based on a first power noise and a second power noise, the first power noise and the second power noise generated based on a first power and a second power supplied to a first electronic device and propagated from the first electronic device to a second electronic device through a communication line, and the first electronic device and the second electronic device configured to perform data communication using a multi-level signaling scheme. The device includes a reference voltage generation circuit configured to generate three or more reference voltages for the multi-level signaling scheme based on the power noise information, and the second electronic device is configured to use the three or more reference voltages.
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Patent Agency Ranking
公开(公告)号：US11791362B2
公开(公告)日：2023-10-17
申请号：US17007332
申请日：2020-08-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Hoon Kim , Kwan Hee Lee
IPC: H01L31/101 , H01L27/146
CPC classification number: H01L27/14636 , H01L27/1463 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14689
Abstract: An image sensor with improved performance, and a method of fabricating the same are provided. The image sensor includes a sensor array region and a pad region, which is disposed outside the sensor array region, the image sensor comprising a first substrate including a first surface, upon which light is incident, and a second surface, which is opposite to the first surface, a first isolation film in the first substrate at the sensor array region, the first isolation film defining a plurality of unit pixels, a second substrate including a third surface, which faces the second surface of the first substrate, and a fourth surface, which is opposite to the third surface, a wiring structure between the second and third surfaces, the wiring structure including an interlayer insulating film and a wiring in the interlayer insulating film, a pad trench in the pad region, the pad trench exposing the wiring through the first substrate, a bonding terminal in the pad trench, the bonding terminal being connected to the wiring, and a second isolation film in the first substrate at the pad region, the second isolation film being adjacent to the pad trench, wherein widths of each of the first and second isolation films decrease in a direction from the second surface to the first surface.
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公开(公告)号：US20220020804A1
公开(公告)日：2022-01-20
申请号：US17222514
申请日：2021-04-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Hoon Kim , Min-Geun Kwon
IPC: H01L27/146 , H01L23/00
Abstract: An image sensor includes a substrate including a pixel region and a pad region and having a first surface and a second surface opposite to the first surface, the pad region of the substrate being provided with a first recess which is recessed to a first depth from the second surface toward the first surface and the pixel region of the substrate being provided with a plurality of unit pixels, an interlayer insulating layer disposed on the first surface, an interconnection line disposed in the interlayer insulating layer, a conductive pad disposed in the first recess of the pad region, and a plurality of penetration structures disposed in the pad region of the substrate and extending from a bottom surface of the first recess to the first surface of the substrate, and electrically connecting the conductive pad to the interconnection line.
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公开(公告)号：US11749702B2
公开(公告)日：2023-09-05
申请号：US17222514
申请日：2021-04-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Hoon Kim , Min-Geun Kwon
IPC: H01L27/146 , H01L23/00
CPC classification number: H01L27/14636 , H01L24/05 , H01L27/14623 , H01L27/14685 , H01L24/06 , H01L27/14621 , H01L27/14634 , H01L2224/05025 , H01L2224/05082 , H01L2224/05184 , H01L2224/05186 , H01L2224/05624 , H01L2224/06181
Abstract: An image sensor includes a substrate including a pixel region and a pad region and having a first surface and a second surface opposite to the first surface, the pad region of the substrate being provided with a first recess which is recessed to a first depth from the second surface toward the first surface and the pixel region of the substrate being provided with a plurality of unit pixels, an interlayer insulating layer disposed on the first surface, an interconnection line disposed in the interlayer insulating layer, a conductive pad disposed in the first recess of the pad region, and a plurality of penetration structures disposed in the pad region of the substrate and extending from a bottom surface of the first recess to the first surface of the substrate, and electrically connecting the conductive pad to the interconnection line.
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9.发明申请METHODS OF FABRICATING THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES USING DIRECT STRAPPING LINE CONNECTIONS 审中-公开使用直接连接线连接制作三维半导体存储器件的方法公开(公告)号：US20140349453A1
公开(公告)日：2014-11-27
申请号：US14455429
申请日：2014-08-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Bongyong Lee , Sang-Hoon Kim , Ae-Jeong Lee , Dongchan Kim
IPC: H01L27/115
CPC classification number: H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L27/11582
Abstract: Memory devices include a plurality of elongate gate stacks extending in parallel on a substrate and at least one insulation region disposed in a trench between adjacent ones of the gate stacks. The at least one insulation region has linear first portions having a first width and widened second portions having a second width greater than the first width. A common source region is disposed in the substrate underlying the at least one insulation region. The devices further include respective conductive plugs passing through respective ones of the widened second portions of the at least one insulation region and electrically connected to the common source region and at least one strapping line disposed on the conductive plugs between the adjacent ones of the gate stacks and in direct contact with the conductive plugs.
Abstract translation: 存储器件包括在衬底上平行延伸的多个细长栅极叠层和设置在相邻栅极叠层之间沟槽中的至少一个绝缘区域。 所述至少一个绝缘区具有具有第一宽度的线性第一部分和具有大于第一宽度的第二宽度的加宽的第二部分。 公共源极区域设置在至少一个绝缘区域下方的衬底中。 这些器件还包括各自的导电插塞，其穿过至少一个绝缘区域的加宽的第二部分中的相应导电插塞并且电连接到公共源极区域，以及设置在相邻栅极叠层之间的导电插塞上的至少一个捆扎线 并与导电插头直接接触。
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公开(公告)号：US10944943B2
公开(公告)日：2021-03-09
申请号：US16392916
申请日：2019-04-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Hoon Kim , Byungjun Park
Abstract: An image sensor is disclosed. The image sensor includes a substrate including an active region and a dummy region, a plurality of unit pixels on the active region, a transparent conductive layer on a first surface of the substrate, a light-blocking layer on the transparent conductive layer and electrically connected to the transparent conductive layer, the light-blocking layer having a grid structure adjacent light transmission regions, and a pad electrically connected to the light-blocking layer, on the dummy region.
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