公开(公告)号：US20250119488A1

公开(公告)日：2025-04-10

申请号：US18988166

申请日：2024-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taejeong KIM ,  Kiju NAM ,  Byounggyu PARK ,  Garam LEE ,  Hosoon LEE ,  Kyunghwan SONG ,  Sanghoon KIM ,  Kidoc SON ,  Hyunsuk CHOI

IPC: H04M1/02

Abstract: Provided is an electronic device including: a first housing; a second housing movably connected to the first housing; a support plate comprising a flexible region, the flexible region comprising a plurality of flexible portions and a plurality of rigid portions integrally formed with the flexible portions; and a display supported by the support plate. Each of the flexible portions comprises a plurality of slits. A first width of at least one of the plurality of slits is wider than a second width of at least one of the plurality of slits. The first width of the at least one of the plurality of slits corresponds a first side of the plurality of slits closer to the display. The second width of the at least one of the plurality of slits corresponds to a second side of the plurality of slits opposite to the first side.

公开(公告)号：US20230077589A1

公开(公告)日：2023-03-16

申请号：US17679863

申请日：2022-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunmook CHOI ,  Jooheon KANG ,  Sanghoon KIM ,  Jihong KIM

IPC: H01L27/24

Abstract: A semiconductor device includes a horizontal wiring layer on a substrate, a stack structure disposed on the horizontal wiring layer and including insulating layers and electrode layers alternately stacked on each other, and a pillar structure extending into the horizontal wiring layer and extending through the stack structure. The electrode layers include one or a plurality of selection lines adjacent to an uppermost end of the stack structure, and word lines surrounding the stack structure below the one or plurality of selection lines. The pillar structure includes a variable resistive layer, a channel layer between the variable resistive layer and the stack structure, a gate dielectric layer between the channel layer and the stack structure, and a blocking pattern disposed between the variable resistive layer and the channel layer and being adjacent to a first selection line among the one or plurality of selection lines.

公开(公告)号：US20230123890A1

公开(公告)日：2023-04-20

申请号：US17807026

申请日：2022-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon KIM ,  Heegeun Jeong ,  Taekhwan Hyun

IPC: H01L27/146

Abstract: An image sensor includes: a pixel array including a plurality of photodiodes arranged on an upper surface of a substrate, pixel isolation layers extending from the upper surface to a lower surface of the substrate and disposed between the plurality of photodiodes, and pixel circuits. The pixel array includes pixel groups respectively including two or more of the photodiodes, at least one color filter, and at least one microlens. The at least one color filter included in each of the pixel groups has one color, and the pixel isolation layers includes a first pixel isolation layer disposed between the pixel groups and containing silicon oxide and polysilicon; and a second pixel isolation layer containing silicon oxide and extending in a first direction and a second direction, which intersect each other between the two or more photodiodes in each of the pixel groups.

公开(公告)号：US20210193721A1

公开(公告)日：2021-06-24

申请号：US16945965

申请日：2020-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon KIM ,  Yunki LEE ,  Hyeongdong JO

IPC: H01L27/146 ,  G01J1/04 ,  G01J1/44 ,  G02B5/20 ,  G02B3/00

Abstract: An image sensor including: a substrate which has a first surface and a second surface opposite to the first surface and pixels arranged in a two-dimensional array, wherein each of the pixels includes a photodiode; a multi-wiring layer arranged on the first surface of the substrate; a color filter layer arranged on the second surface of the substrate and including color filters that respectively correspond to the pixels; and a lens layer arranged on the color filter layer and including a double-sided spherical lens, wherein the double-sided spherical lens includes at least two material layers having different refractive indexes.

公开(公告)号：US20240120357A1

公开(公告)日：2024-04-11

申请号：US18207786

申请日：2023-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon KIM ,  Jonguk KIM ,  Heegeun JEONG

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes a substrate having a plurality of first pixel regions configured to generate image information and a plurality of second pixel regions configured to detect phase information, a grid pattern on the substrate and dividing a plurality of spaces corresponding to each of the plurality of first pixel regions and the plurality of second pixel regions. The image sensor also includes a plurality of color filters respectively in first spaces of the plurality of spaces, excluding second spaces corresponding to the plurality of second pixel regions, a plurality of polarization patterns respectively in the second spaces and partitioning the second spaces, and a microlens layer including a plurality of first microlenses respectively on the plurality of color filters.

公开(公告)号：US20230165002A1

公开(公告)日：2023-05-25

申请号：US18053484

申请日：2022-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suhwan LIM ,  Sanghoon KIM ,  Chungje NA

IPC: H01L29/76

CPC classification number: H01L27/11582 ,  H01L27/11519 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11526 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/11573

Abstract: A semiconductor device includes a lower structure; a pattern structure including first to third pattern layers sequentially stacked on the lower structure; gate electrodes stacked on the pattern structure and spaced apart from each other in a first direction that is perpendicular to an upper surface of the pattern structure, and a channel structure passing through the gate electrodes. The channel structure includes a channel layer and a metal-semiconductor compound layer. The metal-semiconductor compound layer contacts the channel layer and the second pattern layer. The channel structure passes through the second and third pattern layers and extends into the first pattern layer. The second pattern layer has a first metal layer contacting the metal-semiconductor compound layer. At least a portion of the metal-semiconductor compound layer overlaps the lower gate electrode in a second direction perpendicular to the first direction.

公开(公告)号：US20220223636A1

公开(公告)日：2022-07-14

申请号：US17570884

申请日：2022-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon KIM ,  Jinju JEON ,  Heegeun JEONG

IPC: H01L27/146 ,  H04N5/369

Abstract: An image sensor including: a semiconductor substrate having a first surface and a second surface; a pixel device isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the pixel device isolation film defines pixels in the semiconductor substrate, and includes a conductive layer; and a device isolation structure located inside a device isolation trench that extends from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the device isolation structure includes a conductive liner electrically connected to the conductive layer, wherein a negative bias is applied to the conductive layer and the conductive liner.

公开(公告)号：US20220137947A1

公开(公告)日：2022-05-05

申请号：US16956539

申请日：2018-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho JANG ,  Sanghoon KIM

IPC: G06F8/65 ,  G06F8/71

Abstract: According to an embodiment disclosed herein, an interface device to be connected to an external mobile device may comprise: a connector; at least one integrated circuit (IC); a memory for storing firmware for the at least one IC and instructions; and at least one processor configured to execute the stored instructions, wherein the instructions, when executed by the processor, cause the processor to: transmit identification data of the interface device, including data associated with the firmware, to the external mobile device through the connector when the interface device is connected to the external mobile device through the connector; receive firmware update data for the at least one IC, which corresponds to the identification data, from the external mobile device through the connector; verify the integrity of the firmware update data; and update the firmware stored in the memory by using the firmware update data when the integrity of the firmware update data has been verified.

公开(公告)号：US20220005826A1

公开(公告)日：2022-01-06

申请号：US17148334

申请日：2021-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suhwan LIM ,  Jaehun JUNG ,  Sanghoon KIM ,  Taehun KIM ,  Seongchan LEE

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11565 ,  H01L27/11573

Abstract: A semiconductor device includes gate electrodes and insulating layers spaced apart from each other on a substrate and alternately stacked in a direction perpendicular to an upper surface of the substrate, and channel structures that extend through stack structures. Ones of the structures include a channel insulating layer, a pad layer on the channel insulating layer, and a channel layer. The channel layer includes a first channel region, and a second channel region including a semiconductor material having a length shorter than a length of the first channel region and having an impurity concentration of a first conductivity type and the pad layer includes a semiconductor material doped with a second conductivity type impurity. A height level of a lower surface of the second channel region is lower than a height level of a lower surface of a first erase gate electrode.