公开(公告)号：US20220020714A1

公开(公告)日：2022-01-20

申请号：US17204313

申请日：2021-03-17

申请人： Samsung Electronics Co., Ltd.

发明人： Ju-Il CHOI ,  Gyuho KANG ,  Heewon KIM ,  Junyoung PARK ,  Seong-Hoon BAE ,  Jin Ho AN

IPC分类号： H01L23/00 ,  H01L23/532 ,  H01L23/538

摘要： A semiconductor package device may include a redistribution substrate and a semiconductor chip on a top surface of the redistribution substrate. The redistribution substrate may include an under-bump pattern, which includes including a body portion and a protruding portion extended from the body portion to form a single object, an insulating layer covering a side surface of the body portion, and an outer coupling terminal on the protruding portion. The body portion may have a first diameter in a first direction parallel to the top surface of the redistribution substrate, and the protruding portion may have a second diameter in the first direction, which is smaller than the first diameter. A top surface of the protruding portion may be parallel to the first direction, and a side surface of the protruding portion may be inclined at an angle to a top surface of the body portion.

公开(公告)号：US20230282582A1

公开(公告)日：2023-09-07

申请号：US18196077

申请日：2023-05-11

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ju-Il CHOI ,  Gyuho KANG ,  Seong-Hoon BAE ,  Dongjoon OH ,  Chungsun LEE ,  Hyunsu HWANG

IPC分类号： H01L23/532 ,  H01L23/48 ,  H01L23/00 ,  H01L23/522

CPC分类号： H01L23/53238 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/08 ,  H01L24/16 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/16227

摘要： A semiconductor device includes a first semiconductor chip that includes a first conductive pad whose top surface is exposed; and a second semiconductor chip that includes a second conductive pad whose top surface is exposed and in contact with at least a portion of the top surface of the first conductive pad. The first semiconductor chip may include a first diffusion barrier in contact with a bottom surface of the first conductive pad, and a second diffusion barrier in contact with a lateral surface of the first conductive pad, and the first diffusion barrier and the second diffusion barrier may include different materials from each other.

公开(公告)号：US20210384137A1

公开(公告)日：2021-12-09

申请号：US17147661

申请日：2021-01-13

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ju-IL CHOI ,  Gyuho KANG ,  Seong-Hoon BAE ,  Dongjoon OH ,  Chungsun LEE ,  Hyunsu HWANG

IPC分类号： H01L23/532 ,  H01L23/00 ,  H01L23/522 ,  H01L23/48

摘要： A semiconductor device includes a first semiconductor chip that includes a first conductive pad whose top surface is exposed; and a second semiconductor chip that includes a second conductive pad whose top surface is exposed and in contact with at least a portion of the top surface of the first conductive pad. The first semiconductor chip may include a first diffusion barrier in contact with a bottom surface of the first conductive pad, and a second diffusion barrier in contact with a lateral surface of the first conductive pad, and the first diffusion barrier and the second diffusion barrier may include different materials from each other.