Abstract:
A fluid pressure actuator including a fluid pressure cylinder having a first position detector and a second position detector, a piston body having a piston head and a rod, the piston head mounted on the rod and slidably accommodated in the fluid pressure cylinder, the rod including a first scale and a second scale, the first scale facing the first position detector and the first position detector configured to detect a position in a sliding direction of the piston body, the second scale facing the second position detector and the second position detector configured to detect a position of the rod in a rotation direction of the piston body, and a controller configured to perform a first positioning control of a position of the rod in the sliding direction and a second positioning control of the rod in the rotation direction may be provided.
Abstract:
A method of manufacturing a semiconductor device includes: providing a first substrate that includes internal wiring, the first substrate including an array of chip mounting regions that includes a first chip mounting region; placing the first substrate on a first carrier line; providing a first semiconductor chip; placing the first semiconductor chip on a first moveable tray; vertically aligning the first chip mounting region of the first substrate with the first semiconductor chip, and performing initial bonding of the first semiconductor chip to the first chip mounting region of the first substrate; and performing subsequent bonding on the initially-bonded first semiconductor chip and first mounting region of the first substrate, thereby more strongly bonding the first semiconductor chip to the first substrate at the first mounting region. The initial bonding occurs after performing a subsequent bonding of at least one other semiconductor chip on the first substrate.
Abstract:
An exposure apparatus includes a droplet supplier to supply a target droplet inside a vacuum chamber, an irradiator irradiating a pulsed laser onto the target droplet, a condensing mirror installed inside the vacuum chamber and configured to condense a light emitted from the target droplet by irradiation of the pulsed laser onto the target droplet, a gas supplier to flow a hydrogen gas along a surface of the condensing mirror, a controller to change a supply condition of the target droplet and an irradiation condition of the pulsed laser to conditions different from conditions during an exposure operation to increase an amount of production of hydrogen radicals in the vacuum chamber, and an exhaust pump to exhaust a gas from an inside of the vacuum chamber.
Abstract:
An optical device includes a monochromatic light source, a light distribution switching portion configured to transmit monochromatic light emitted from the monochromatic light source in one fan-shaped region among a plurality of fan-shaped regions centered on a central optical axis and block the monochromatic light in other fan-shaped regions, an objective lens, an aperture stop configured to collect reflected light from the object, an imaging lens, which has passed through the aperture stop, a light receiver on an imaging plane formed by the imaging lens and configured to receive the reflected light from the object and photoelectrically convert the received reflected light, and a controller configured to instruct the light distribution switching portion to change a region transmitting light over time, and calculate a normal direction of the object based on an electrical signal photoelectrically converted by the light receiver.
Abstract:
The polarized microscope includes a light source configured to generate illumination light, a polarizer configured to interact with the generated illumination light to transmit rectilinear polarized light having a first orientation, an analyzer configured to transmit a component of rectilinear polarized light reflected by a sample, the reflected rectilinear polarized light having a second orientation, an image obtainer configured to obtain an image of the reflected rectilinear polarized light, and an image processor configured to process the obtained image, wherein the image processor is configured to calculate a device integer, obtain a plurality of hysteresis loops for each of regions of interest (ROIs), and calculate a rotation angle of a Kerr rotation of each ROI by using the device integer and the plurality of hysteresis loops.
Abstract:
To reduce a measurement time, an inspection device includes a stage configured to fix a magnetoresistive random access memory (MRAM) to a stage surface and moving the MRAM, a plurality of magnets configured to generate a gradient magnetic, a plurality of line sensors comprising a first line sensor for detecting a magneto-optical effect at a first location of the MRAM and a second line sensor for detecting the magneto-optical effect at a second location that is different from the first location by moving a location of the MRAM within the gradient magnetic field, and an information processor configured to process the magneto-optical effect detected by the plurality of line sensors. Thus, throughput may be improved.
Abstract:
The inventive concepts provide a magnetic property measurement apparatus capable of quickly measuring a magnetic property of a subject without a decrease in a measurement speed that might occur due to an electromagnet. In addition, the inventive concepts provide a magnetic property measurement apparatus capable of monitoring a magnetization distribution of a memory device as an image and integrating images by using a TDI camera, thereby being capable of performing highly sensitive measurement and not having to capture images for a long time. The magnetic property measurement apparatus includes: a magnetic field generation unit configured to generate a magnetic field which is constant with time and varies with relative position; a mobile unit configured to move a subject to be measured in the magnetic field; and a measurement unit configured to measure a magnetic property of the subject moving in the magnetic field.
Abstract:
A method for adjusting inclination between wafers may include providing a first infrared light onto a first grid pattern in a first region in a first wafer and a second grid pattern in a second wafer, the first and second grid patterns overlapping, calculating a first distance in the first region between the first and second wafers based on a first Moiré pattern from the overlapping first and second grid patterns, providing a second infrared light onto a third grid pattern in a second region in the first wafer and a fourth grid pattern in the second wafer, the third and fourth grid patterns overlapping, calculating a second distance in the second region between the first and second wafers based on a second Moiré pattern from the overlapping third and fourth grid patterns, and adjusting relative inclination between the first and second wafers based on the first and second distances.