公开(公告)号：US10943524B2

公开(公告)日：2021-03-09

申请号：US16427856

申请日：2019-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Chul Choi ,  Sung-Ho Kang ,  June-Hee Lee ,  Han-Kyul Lim ,  Byung-Wook Cho

IPC: G06F13/42 ,  G09G3/20 ,  G06F7/58

Abstract: A device for generating restoration data by descrambling scramble data includes a linear feedback shift register configured to receive a first clock including a plurality of edges and sequentially generate a plurality of seeds including first to N−1th seeds (where N is a natural number of 2 or greater) respectively corresponding to first to N−1th edges among the plurality of edges, a seed calculator configured to calculate an Nth seed corresponding to an Nth edge among the plurality of edges by using the first seed, and a descrambler configured to descramble the scramble data by using the plurality of seeds generated by the linear feedback shift register and the Nth seed calculated by the seed calculator. The linear feedback shift register is further configured to generate an N+1th seed by using the Nth seed.

公开(公告)号：US09818596B2

公开(公告)日：2017-11-14

申请号：US15094358

申请日：2016-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gon-Su Kang ,  Sung-Ho Kang ,  Min-Chul Kim ,  Sun-Ho Ryu ,  Kwang-jun Lee ,  Yong-Hun Lee ,  Ju-Hong Lee ,  Sun-Hong Choi ,  Sang-Cheol Ha

IPC: H01J61/52 ,  H01L21/67 ,  H01J61/06

CPC classification number: H01J61/526 ,  H01J61/06 ,  H01J61/0732 ,  H01J61/523 ,  H01J61/82 ,  H01J61/90 ,  H01L21/67115 ,  H05B7/18

Abstract: An arc lamp includes an arc tube configured to receive a reaction gas therein, and an anode and a cathode disposed opposite one another within the arc tube and configured to generate an electrical arc. The anode includes an anode head portion extending inwardly from an end portion of the arc tube, and an anode tip portion bonded to the anode head portion and comprising a trench extending in a top surface along a peripheral region of the anode tip portion.

公开(公告)号：US09269578B2

公开(公告)日：2016-02-23

申请号：US14152191

申请日：2014-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho Kang ,  Bong-Jin Kuh ,  Yong-Kyu Joo ,  Sung-Ho Heo ,  Hee-Seok Kim ,  Yong-Sung Park

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  C30B25/02 ,  C30B29/06

CPC classification number: H01L21/02636 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/67109

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract translation: 在形成外延层的方法中，蚀刻气体可能被分解以形成分解的蚀刻气体。 源气体可能被分解形成分解的源气体。 分解的源气体可以施加到衬底上以在衬底上形成外延层。 可以使用分解的蚀刻气体蚀刻在衬底的特定区域上的外延层的一部分。 在蚀刻气体被引入反应室之前，蚀刻气体可以预先分解。 然后将分解的蚀刻气体引入反应室以蚀刻衬底上的外延层。 结果，衬底上的外延层可以具有均匀的分布。

公开(公告)号：US09589795B2

公开(公告)日：2017-03-07

申请号：US14994120

申请日：2016-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho Kang ,  Bong-Jin Kuh ,  Yong-Kyu Joo ,  Sung-Ho Heo ,  Hee-Seok Kim ,  Yong-Sung Park

IPC: C23C16/00 ,  H01L21/02 ,  H01L21/67 ,  C30B25/02 ,  C30B29/06 ,  H01L21/3065

CPC classification number: H01L21/02636 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/67109

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract translation: 在形成外延层的方法中，蚀刻气体可能被分解以形成分解的蚀刻气体。 源气体可能被分解形成分解的源气体。 分解的源气体可以施加到衬底上以在衬底上形成外延层。 可以使用分解的蚀刻气体蚀刻在衬底的特定区域上的外延层的一部分。 在蚀刻气体被引入反应室之前，蚀刻气体可以预先分解。 然后将分解的蚀刻气体引入反应室以蚀刻衬底上的外延层。 结果，衬底上的外延层可以具有均匀的分布。