公开(公告)号：US09110233B2

公开(公告)日：2015-08-18

申请号：US13726346

申请日：2012-12-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-Chul Kim ,  Bong-Jin Kuh ,  Jung-Yun Won ,  Eun-Ha Lee ,  Han-Mei Choi

IPC: G02F1/035 ,  G02B6/122 ,  G02B6/124 ,  G02F1/025 ,  G02B6/132 ,  G02B6/12

CPC classification number: G02B6/13 ,  G02B6/122 ,  G02B6/124 ,  G02B6/131 ,  G02B6/132 ,  G02B2006/12061 ,  G02B2006/121 ,  G02B2006/12107 ,  G02B2006/12147 ,  G02F1/025 ,  G02F1/035 ,  H01L29/66477

Abstract: A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation .

Abstract translation: 半导体器件包括单晶衬底，电子元件和光学元件。 电元件设置在单晶衬底上。 电气元件包括以晶体取向<110>延伸的栅极电极和与栅电极相邻的源极和漏极区域。 源极区域和漏极区域布置在基本上垂直于栅电极延伸的方向的方向上。 光学元件设置在单晶衬底上。 光学元件包括以晶体取向<010>延伸的光波导。

公开(公告)号：US09142558B2

公开(公告)日：2015-09-22

申请号：US14066000

申请日：2013-10-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Jeong Yang ,  Soon-Wook Jung ,  Bong-Jin Kuh ,  Wan-Don Kim ,  Byung-Hong Chung ,  Yong-Suk Tak

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L28/60 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91

Abstract: A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

Abstract translation: 半导体器件包括多个下电极，其垂直长度大于衬底上的水平宽度，设置在下电极之间的支撑体，设置在下电极上的上电极，以及设置在下电极和下电极之间的电容器电介质层 上电极。 支撑体包括第一元件，第二元件和氧，第二元件的氧化物具有比第一元件的氧化物更高的带隙能量，并且支撑件中的第二元件的含量为约10原子％ 至90原子％。

公开(公告)号：US09553141B2

公开(公告)日：2017-01-24

申请号：US14858069

申请日：2015-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Jeong Yang ,  Soon-Wook Jung ,  Bong-Jin Kuh ,  Wan-Don Kim ,  Byung-Hong Chung ,  Yong-Suk Tak

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91

Abstract: A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

Abstract translation: 半导体器件包括多个下电极，其垂直长度大于衬底上的水平宽度，设置在下电极之间的支撑体，设置在下电极上的上电极，以及设置在下电极和下电极之间的电容器电介质层 上电极。 支撑体包括第一元件，第二元件和氧，第二元件的氧化物具有比第一元件的氧化物更高的带隙能量，并且支撑件中的第二元件的含量为约10原子％ 至90原子％。

公开(公告)号：US09842966B2

公开(公告)日：2017-12-12

申请号：US14764513

申请日：2014-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam-Goo Cha ,  Bong-Jin Kuh ,  Han-Mei Choi

IPC: H01L33/24 ,  H01L33/20 ,  H01L33/18 ,  H01L33/08 ,  H01L33/00 ,  B82Y20/00

CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01L33/005 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20

Abstract: There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type semiconductor, a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer, a plurality of nanocores disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor, an active layer disposed on surfaces of the plurality of nanocores positioned to be higher than the first insulating layer, a second insulating layer disposed on the first insulating layer and having a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores, and a second conductivity-type semiconductor layer disposed on the surface of the active layer positioned to be higher than the second insulating layer.

公开(公告)号：US09589795B2

公开(公告)日：2017-03-07

申请号：US14994120

申请日：2016-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho Kang ,  Bong-Jin Kuh ,  Yong-Kyu Joo ,  Sung-Ho Heo ,  Hee-Seok Kim ,  Yong-Sung Park

IPC: C23C16/00 ,  H01L21/02 ,  H01L21/67 ,  C30B25/02 ,  C30B29/06 ,  H01L21/3065

CPC classification number: H01L21/02636 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/67109

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract translation: 在形成外延层的方法中，蚀刻气体可能被分解以形成分解的蚀刻气体。 源气体可能被分解形成分解的源气体。 分解的源气体可以施加到衬底上以在衬底上形成外延层。 可以使用分解的蚀刻气体蚀刻在衬底的特定区域上的外延层的一部分。 在蚀刻气体被引入反应室之前，蚀刻气体可以预先分解。 然后将分解的蚀刻气体引入反应室以蚀刻衬底上的外延层。 结果，衬底上的外延层可以具有均匀的分布。

公开(公告)号：US09269578B2

公开(公告)日：2016-02-23

申请号：US14152191

申请日：2014-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho Kang ,  Bong-Jin Kuh ,  Yong-Kyu Joo ,  Sung-Ho Heo ,  Hee-Seok Kim ,  Yong-Sung Park

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  C30B25/02 ,  C30B29/06

CPC classification number: H01L21/02636 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/67109

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract translation: 在形成外延层的方法中，蚀刻气体可能被分解以形成分解的蚀刻气体。 源气体可能被分解形成分解的源气体。 分解的源气体可以施加到衬底上以在衬底上形成外延层。 可以使用分解的蚀刻气体蚀刻在衬底的特定区域上的外延层的一部分。 在蚀刻气体被引入反应室之前，蚀刻气体可以预先分解。 然后将分解的蚀刻气体引入反应室以蚀刻衬底上的外延层。 结果，衬底上的外延层可以具有均匀的分布。