公开(公告)号：US20140141569A1

公开(公告)日：2014-05-22

申请号：US14018630

申请日：2013-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chajea JO ,  Ji Hwang KIM ,  Tae Hong MIN ,  Tae-Sub CHANG ,  Taeje CHO

IPC: H01L21/768 ,  H01L21/50

CPC classification number: H01L21/50 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/13 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/83191 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/07802 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/05552

Abstract: In a method of fabricating a semiconductor device, a first sacrificial through-via is formed to fill a first via-hole extending from a first surface of a first substrate toward a second surface of the first substrate opposite the first surface. The first surface of the first substrate is bonded to a carrier. The first sacrificial through-via is exposed, and the first sacrificial through-via is selectively removed. After selectively removing the first sacrificial through-via, a conductive through-via is formed to fill the first via-hole.

Abstract translation: 在制造半导体器件的方法中，形成第一牺牲通孔以填充从第一衬底的第一表面朝向与第一表面相对的第一衬底的第二表面延伸的第一通孔。 第一衬底的第一表面被结合到载体上。 第一牺牲通孔被暴露，并且选择性地去除第一牺牲通孔。 在选择性地去除第一牺牲通孔之后，形成导电通孔以填充第一通孔。