公开(公告)号：US20220272856A1

公开(公告)日：2022-08-25

申请号：US17678915

申请日：2022-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeamoon JUNG ,  Jayeun KO ,  Hokyung MOON ,  Taehyun SONG

IPC: H05K5/03

Abstract: Disclosed is an electronic device including a cover defining a portion of an external appearance of the electronic device, a film layer attached to a first surface of the cover, at least one UV molding pattern layer disposed on the film layer, wherein the at least one UV molding pattern layer includes a first area, and a second area that is different from the first area, a thermally cured printing layer disposed on the first area of the at least one UV molding pattern layer, and a deposition layer including a first part disposed to overlap the first area of the at least one UV molding pattern layer, and a second part disposed in the second area of the at least one UV molding pattern layer.

公开(公告)号：US20200211656A1

公开(公告)日：2020-07-02

申请号：US16817043

申请日：2020-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Chu OH ,  Pilsang YOON ,  Jun Jin KONG ,  Jisu KIM ,  Hong Rak SON ,  Jinbae BANG ,  Daeseok BYEON ,  Taehyun SONG ,  Dongjin SHIN ,  Dongsup JIN

IPC: G11C16/28 ,  G11C29/02 ,  G11C16/04 ,  G11C29/50 ,  G11C16/26 ,  G11C16/34 ,  G11C11/56 ,  G11C16/10

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

公开(公告)号：US20180294036A1

公开(公告)日：2018-10-11

申请号：US16003729

申请日：2018-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Chu OH ,  Pilsang YOON ,  Jun Jin KONG ,  Jisu KIM ,  Hong Rak SON ,  Jinbae BANG ,  Daeseok BYEON ,  Taehyun SONG ,  Dongjin SHIN ,  Dongsup JIN

IPC: G11C16/28 ,  G11C16/04 ,  G11C16/10 ,  G11C16/34 ,  G11C11/56

CPC classification number: G11C16/28 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5671 ,  G11C16/04 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C16/3495 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50004 ,  G11C2029/5004 ,  G11C2211/563 ,  G11C2211/5634

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.