公开(公告)号：US20130341303A1

公开(公告)日：2013-12-26

申请号：US13926278

申请日：2013-06-25

Applicant: Kyungpook National University Industry-Academic Cooperation Foundation ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Il KIM ,  Bae Hyung KIM ,  Jong Keun SONG ,  Seung Heun LEE ,  Kyung Il CHO ,  Yong Rae ROH ,  Won Seok LEE

IPC: A61B8/00

CPC classification number: H01L21/3065 ,  A61B8/4411 ,  B06B1/0292 ,  H01L21/308 ,  H01L22/12 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/131 ,  H01L2224/16238 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/7598 ,  H01L2224/75983 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/1461 ,  Y10T156/1702 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

Abstract: A jig includes a wafer including an accommodation groove configured to accommodate a capacitive micromachined ultrasonic transducer (cMUT) when flip chip bonding is performed, and a separation groove formed in a bottom surface of the accommodation groove, the separation groove having a bottom surface that is spaced apart from thin films of the cMUT that face the bottom surface of the separation groove when the cMUT is seated on portions of the bottom surface of the accommodation groove.

公开(公告)号：US20230143634A1

公开(公告)日：2023-05-11

申请号：US17857082

申请日：2022-07-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu JIN ,  Jung Chak AHN ,  Won Seok LEE

IPC: H01L27/146

CPC classification number: H01L27/14612

Abstract: Disclosed is a semiconductor device including a substrate, a gate structure on the substrate, and including first and second sides extended in parallel with a first direction and spaced apart from each other in a second direction, and a third side extended in parallel with the second direction, and a plurality of source/drain areas including first and second source/drain areas spaced apart from each other in the second direction and a third source/drain area spaced apart from at least one of the first or second source/drain area in the first direction, the first and second source/drain areas overlap the first and second sides, respectively, the third source/drain area overlaps one of the first side or the third side, and a voltage applied to the first and second source/drain areas and a voltage applied to the third source/drain area operate based on their respective values different from each other.

公开(公告)号：US20230197740A1

公开(公告)日：2023-06-22

申请号：US17879521

申请日：2022-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Seok LEE

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685

Abstract: The present disclosure relates to an image sensor and/or a method for manufacturing the same. The image sensor may include a substrate including a first surface, a second surface opposite the first surface, and a plurality of unit pixel regions in the substrate; a pixel defining pattern; and a micro lens. Each of the plurality of unit pixel regions may include a photoelectric conversion layer. The pixel defining pattern may extend through the substrate in a first direction so as to define each of the unit pixel regions. The micro lens may be on the second surface of the substrate and corresponding to the unit pixel regions. The pixel defining pattern may include a first conductive layer and a second conductive layer spaced apart from the first conductive layer.

公开(公告)号：US20150140824A1

公开(公告)日：2015-05-21

申请号：US14607265

申请日：2015-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Kyungpook National University Industry-Academic Cooperation Foundation

Inventor： Young Il KIM ,  Bae Hyung KIM ,  Jong Keun SONG ,  Seung Heun LEE ,  Kyung Il CHO ,  Yong Rae ROH ,  Won Seok LEE

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  A61B8/4411 ,  B06B1/0292 ,  H01L21/308 ,  H01L22/12 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/131 ,  H01L2224/16238 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/7598 ,  H01L2224/75983 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/1461 ,  Y10T156/1702 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

Abstract: A jig includes a wafer including an accommodation groove configured to accommodate a capacitive micromachined ultrasonic transducer (cMUT) when flip chip bonding is performed, and a separation groove formed in a bottom surface of the accommodation groove, the separation groove having a bottom surface that is spaced apart from thin films of the cMUT that face the bottom surface of the separation groove when the cMUT is seated on portions of the bottom surface of the accommodation groove.

Abstract translation: 夹具包括晶片，其包括配置为在进行倒装芯片接合时容纳电容微机械超声换能器（cMUT）的容纳凹槽和形成在容纳槽的底表面中的分离槽，分离槽具有底表面， 当cMUT位于容纳槽的底部表面的部分上时，与位于分离槽的底表面的cMUT的薄膜间隔开。

公开(公告)号：US20230164292A1

公开(公告)日：2023-05-25

申请号：US18158501

申请日：2023-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Seok LEE ,  Seong Wook SONG ,  Yun Seok CHOI

IPC: H04N5/917 ,  H04N19/14 ,  H04N23/80

CPC classification number: H04N5/917 ,  H04N19/14 ,  H04N23/80

Abstract: The present disclosure provides an image encoder. The image encoder is configured to encode an original image and reduce compression loss. The image encoder comprises an image signal processor and a compressor. The image signal processor is configured to receive a first frame image and a second frame image and generates a compressed image of the second frame image using a boundary pixel image of the first frame image. The image signal processor may include memory configured to store first reference pixel data which is the first frame image. The compressor is configured to receive the first reference pixel data from the memory and generate a bitstream obtained by encoding the second frame image based on a difference value between the first reference pixel data and the second frame image. The image signal processor generates a compressed image of the second frame image using the bitstream generated by the compressor.