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公开(公告)号：US20210066046A1
公开(公告)日：2021-03-04
申请号：US16883392
申请日：2020-05-26
发明人： Junyoung Oh , Jaeho Kwak , Boeun Jang , Seokyeon Hwang , Yongseok Seo , Sangsoo Kim , Seunghwan Kim , Jongho Park , Yongkwan Lee , Jongho Lee , Daewook Kim , Wonpil Lee , Changkyu Choi
摘要： A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.
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2.发明授权公开(公告)号：US11728142B2
公开(公告)日：2023-08-15
申请号：US16883392
申请日：2020-05-26
发明人： Junyoung Oh , Jaeho Kwak , Boeun Jang , Seokyeon Hwang , Yongseok Seo , Sangsoo Kim , Seunghwan Kim , Jongho Park , Yongkwan Lee , Jongho Lee , Daewook Kim , Wonpil Lee , Changkyu Choi
IPC分类号： H01J37/32 , C23C16/455 , C23C16/458 , H01L21/673
CPC分类号： H01J37/32449 , C23C16/45504 , C23C16/45589 , H01J37/32633 , C23C16/4583 , C23C16/45502 , C23C16/45591 , H01J37/32357 , H01L21/67326
摘要： A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.
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公开(公告)号：US20230343560A1
公开(公告)日：2023-10-26
申请号：US18217043
申请日：2023-06-30
发明人： Junyoung Oh , Jaeho Kwak , Boeun Jang , Seokyeon Hwang , Yongseok Seo , Sangsoo Kim , Seunghwan Kim , Jongho Park , Yongkwan Lee , Jongho Lee , Daewook Kim , Wonpil Lee , Changkyu Choi
IPC分类号： H01J37/32 , C23C16/455
CPC分类号： H01J37/32449 , C23C16/45504 , C23C16/45589 , H01J37/32633 , H01J37/32357 , C23C16/45591 , C23C16/45502 , C23C16/4583
摘要： A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.
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