公开(公告)号：US11728142B2

公开(公告)日：2023-08-15

申请号：US16883392

申请日：2020-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung Oh ,  Jaeho Kwak ,  Boeun Jang ,  Seokyeon Hwang ,  Yongseok Seo ,  Sangsoo Kim ,  Seunghwan Kim ,  Jongho Park ,  Yongkwan Lee ,  Jongho Lee ,  Daewook Kim ,  Wonpil Lee ,  Changkyu Choi

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  H01L21/673

CPC classification number: H01J37/32449 ,  C23C16/45504 ,  C23C16/45589 ,  H01J37/32633 ,  C23C16/4583 ,  C23C16/45502 ,  C23C16/45591 ,  H01J37/32357 ,  H01L21/67326

Abstract: A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.

公开(公告)号：US20210066046A1

公开(公告)日：2021-03-04

申请号：US16883392

申请日：2020-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung Oh ,  Jaeho Kwak ,  Boeun Jang ,  Seokyeon Hwang ,  Yongseok Seo ,  Sangsoo Kim ,  Seunghwan Kim ,  Jongho Park ,  Yongkwan Lee ,  Jongho Lee ,  Daewook Kim ,  Wonpil Lee ,  Changkyu Choi

IPC: H01J37/32 ,  H01L21/67 ,  H01J37/34

Abstract: A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.

公开(公告)号：US12223164B2

公开(公告)日：2025-02-11

申请号：US18198372

申请日：2023-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangho Park ,  Kwangyoun Kim ,  Sooam Kim ,  Jeewoong Kim ,  Joonjae Park ,  Dockjo Yang ,  Soonbae Yang ,  Soyong Lee ,  Boeun Jang ,  Youngwoong Joo

IPC: G06F3/04886 ,  G06F3/041 ,  G06F3/044 ,  G06F3/04817 ,  G06F3/16 ,  G06F3/0488 ,  H05B6/64

Abstract: An electronic device comprises: a panel; a sensor configured to detect a user's touch with respect to at least one region among a plurality of areas in the panel; a plurality of icon members positionable to an upper portion of the at least one region from among the plurality of regions of the panel based on the user's touch on the at least one region being detected by the sensor, the plurality of icon members being configured to respectively display icons corresponding to functions performable by the electronic device; and a processor configured to perform a function corresponding to an icon member based on the user's touch on the at least one region detected by the sensor occurring in association with the icon member.

公开(公告)号：US20230343560A1

公开(公告)日：2023-10-26

申请号：US18217043

申请日：2023-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung Oh ,  Jaeho Kwak ,  Boeun Jang ,  Seokyeon Hwang ,  Yongseok Seo ,  Sangsoo Kim ,  Seunghwan Kim ,  Jongho Park ,  Yongkwan Lee ,  Jongho Lee ,  Daewook Kim ,  Wonpil Lee ,  Changkyu Choi

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32449 ,  C23C16/45504 ,  C23C16/45589 ,  H01J37/32633 ,  H01J37/32357 ,  C23C16/45591 ,  C23C16/45502 ,  C23C16/4583

Abstract: A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.