公开(公告)号：US20180175261A1

公开(公告)日：2018-06-21

申请号：US15617669

申请日：2017-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hanul Yoo ,  Yong ll Kim ,  Sung Hyun Sim ,  Wan Tae Lim ,  Hye Seok Noh ,  Ji Hye Yeon

IPC: H01L33/58 ,  H01L33/06 ,  H01L33/32 ,  H01L33/22 ,  H01L33/12 ,  H01L33/50 ,  H01L33/40 ,  H01L33/00

CPC classification number: H01L33/405 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/46 ,  H01L33/501 ,  H01L33/505 ,  H01L2933/0016 ,  H01L2933/0041

Abstract: A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.