公开(公告)号：US20170221893A1

公开(公告)日：2017-08-03

申请号：US15390361

申请日：2016-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-suk TAK ,  Tae-jong LEE ,  Gi-gwan PARK ,  Ji-myoung LEE

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8234 ,  H01L21/02 ,  H01L27/02 ,  H01L29/08

CPC classification number: H01L27/0886 ,  H01L21/0217 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481 ,  H01L21/8258 ,  H01L27/0207 ,  H01L27/088 ,  H01L29/0649 ,  H01L29/0665 ,  H01L29/0847 ,  H01L29/42376

Abstract: An integrated circuit device includes: a pair of width-setting patterns over a substrate, the pair of width-setting patterns defining a width of a gate structure space in a first direction and extending in a second direction intersecting with the first direction. A gate electrode layer is provided that extends in the gate structure space along the second direction. A gate insulating layer is provided in the gate structure space and between the substrate and the gate electrode layer. An insulating spacer is provides on the pair of width-setting patterns, the insulating spacer covering both sidewalls of the gate electrode layer, wherein the pair of width-setting patterns have a carbon content that is greater than a carbon content of the insulating spacer.

公开(公告)号：US20170117140A1

公开(公告)日：2017-04-27

申请号：US15296220

申请日：2016-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-suk TAK ,  Tae-jong LEE ,  Bon-young KOO ,  Ki-yeon PARK ,  Sung-hyun CHOI

IPC: H01L21/02 ,  H01L29/49 ,  C23C16/455 ,  H01L27/092 ,  H01L27/11 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78

Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.

公开(公告)号：US20190287797A1

公开(公告)日：2019-09-19

申请号：US16422375

申请日：2019-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-suk TAK ,  Tae-jong LEE ,  Bon-young KOO ,  Ki-yeon PARK ,  Sung-hyun CHOI

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/30 ,  H01L29/66 ,  H01L29/49 ,  H01L27/11 ,  H01L27/092

Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.

公开(公告)号：US20180286676A1

公开(公告)日：2018-10-04

申请号：US15706842

申请日：2017-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-suk TAK ,  Min-jae Kang ,  Ju-ri Lee

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/34 ,  C23C16/455 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L21/02656 ,  C23C16/345 ,  C23C16/347 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/458 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517

Abstract: A method of manufacturing an integrated circuit device and an integrated circuit device prepared according to the method, the method including forming a silicon oxycarbonitride (SiOCN) material layer on an active region of a substrate, the forming the SiOCN material layer including using a precursor that has a bond between a silicon (Si) atom and a carbon (C) atom; etching a portion of the active region to form a recess in the active region; baking a surface of the recess at about 700° C. to about 800° C. under a hydrogen (H2) atmosphere, and exposing the SiOCN material layer to the atmosphere of the baking while performing the baking; and growing a semiconductor layer from the surface of the recess baked under the hydrogen atmosphere.

公开(公告)号：US20170186603A1

公开(公告)日：2017-06-29

申请号：US15372434

申请日：2016-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kang-hun MOON ,  Yong-suk TAK ,  Gi-gwan PARK

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/45531 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28247 ,  H01L29/6656 ,  H01L29/66795

Abstract: A method of forming a SiOCN material layer and a method of fabricating a semiconductor device are provided, the method of forming a SiOCN material layer including supplying a silicon source onto a substrate; supplying a carbon source onto the substrate; supplying an oxygen source onto the substrate; and supplying a nitrogen source onto the substrate, wherein the silicon source includes a non-halogen silylamine, a silane compound, or a mixture thereof.