公开(公告)号：US08927426B2

公开(公告)日：2015-01-06

申请号：US13766326

申请日：2013-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Jin Lee ,  Pil-Kyu Kang ,  Kyu-Ha Lee ,  Gilheyun Choi ,  YongSoon Choi ,  Byung Lyul Park ,  Hyunsoo Chung

IPC: H01L21/302 ,  H01L29/40 ,  H01L23/48 ,  H01L21/768 ,  H01L25/065 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/3128 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

Abstract: Semiconductor devices having through-vias and methods for fabricating the same are described. The method may include forming a hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a sacrificial layer partially filling the hole, forming a through-via in the hole partially filled with the sacrificial layer, forming a via-insulating layer between the through-via and the substrate, and exposing the through-via through a bottom surface of the substrate. Forming the sacrificial layer may include forming an insulating flowable layer on the substrate, and constricting the insulating flowable layer to form a solidified flowable layer.

Abstract translation: 描述了具有通孔的半导体器件及其制造方法。 该方法可以包括形成朝向衬底的顶表面打开并部分地穿透衬底的孔，形成部分填充孔的牺牲层，在部分填充有牺牲层的孔中形成通孔，形成通孔绝缘 通孔和衬底之间的层，并且使通孔穿过衬底的底表面。 形成牺牲层可以包括在衬底上形成绝缘的可流动层，并且收缩绝缘流动层以形成固化的可流动层。

公开(公告)号：US20130207242A1

公开(公告)日：2013-08-15

申请号：US13766326

申请日：2013-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Jin Lee ,  Pil-Kyu Kang ,  Kyu-Ha Lee ,  Gilheyun Choi ,  YongSoon Choi ,  Byung Lyul Park ,  Hyunsoo Chung

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/3128 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

Abstract: Semiconductor devices having through-vias and methods for fabricating the same are described. The method may include forming a hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a sacrificial layer partially filling the hole, forming a through-via in the hole partially filled with the sacrificial layer, forming a via-insulating layer between the through-via and the substrate, and exposing the through-via through a bottom surface of the substrate. Forming the sacrificial layer may include forming an insulating flowable layer on the substrate, and constricting the insulating flowable layer to form a solidified flowable layer.

Abstract translation: 描述了具有通孔的半导体器件及其制造方法。 该方法可以包括形成朝向衬底的顶表面打开并部分地穿透衬底的孔，形成部分填充孔的牺牲层，在部分填充有牺牲层的孔中形成通孔，形成通孔绝缘 通孔和衬底之间的层，并且使通孔穿过衬底的底表面。 形成牺牲层可以包括在衬底上形成绝缘的可流动层，并且收缩绝缘流动层以形成固化的可流动层。