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公开(公告)号：US20250066984A1
公开(公告)日：2025-02-27
申请号：US18943291
申请日：2024-11-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaeryong PARK , Dongpil SEO , Kanghyun LEE , Youngjin CHO
IPC: D06F39/10 , B01D29/11 , B01D29/64 , B01D35/143 , B01D35/157 , D06F23/02 , D06F34/20 , D06F37/26 , D06F39/08 , D06F39/12 , D06F103/42 , D06F103/44 , D06F105/02 , D06F105/06 , D06F105/08 , D06F105/54 , D06F105/58
Abstract: A washing machine comprising: a housing having a loading inlet that is open; a tub to be positioned inside the housing; a door to open and close the loading inlet; a detergent supply device provided in a first space formed between the housing and the upper part of a first side of the tub to supply detergent to the tub; a pump device provided to pump washing water inside the tub; and a filter provided to filter the washing water flowing in from the pump device.
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2.发明公开公开(公告)号：US20240242981A1
公开(公告)日：2024-07-18
申请号：US18415798
申请日：2024-01-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sehoon JANG , Inhwa BAEK , Hyungku KIM , Kibum YU , Jaesung YUN , Yongin LEE , Jaehyuk JUNG , Gwanghee JO , Youngjin CHO
CPC classification number: H01L21/67092 , H01L24/80 , H01L2224/80894
Abstract: A substrate bonding apparatus may include a first bonding chuck including a first base and a first transformation plate, and a second including a second base facing the first bonding chuck. The first base may include a recess groove. The recess groove may be recessed inward from a surface on which the first transformation plate is mounted. The first transformation plate may include a first protrusion protruding outward from a first surface of the first transformation plate. A second surface of the first transformation plate may be opposite the first surface of the first transformation plate. The second surface of the first transformation plate may be configured to support a first substrate. The first transformation plate may be mounted on the first base in a manner allowing a distance between the first transformation plate and the first base to vary.
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公开(公告)号：US20240052548A1
公开(公告)日：2024-02-15
申请号：US18211120
申请日：2023-06-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dongpil SEO , Youngjin CHO , Kanghyun LEE , Jaebok LEE
CPC classification number: D06F39/10 , D06F39/083 , B01D29/35 , B01D35/30 , D06F33/43 , B01D29/6476 , B01D35/147 , B01D29/96 , D06F2105/34
Abstract: A filter apparatus positionable outside a washing machine and connectable to a drain device of the washing machine, the filter apparatus including a filter case including a case inlet configured so that, with the filter apparatus connected to the drain device, water from the drain device is flowable through the case inlet into the filter case, and a case outlet configured so that, with the filter apparatus connected to the drain device, water in the filter case is flowable through the case outlet out of the filter case; a filter detachably mountable inside the filter case so that water flowing through the case inlet is flowable through a surface of the filter to filter foreign substances from the water, and then to the case outlet; a filter cleaning device configured to clean the surface of the filter; and a controller configured to control the filter cleaning device.
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公开(公告)号：US20240052546A1
公开(公告)日：2024-02-15
申请号：US18210811
申请日：2023-06-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kanghyun LEE , Dongpil SEO , Jaebok LEE , Youngjin CHO
CPC classification number: D06F39/10 , B01D35/02 , B01D35/143 , B01D29/23 , B01D29/605 , B01D29/6476 , B01D2201/08 , B01D2201/282
Abstract: A filter apparatus positionable outside a washing machine and connectable to a drain device of the washing machine, the filter apparatus including a filter case including a case inlet a case outlet; a filter detachably installable inside the filter case, the filter through which water flowing from the case inlet to the case outlet passes; a sensor to detect water entered into the filter apparatus from the drain device and to produce a corresponding signal; and a filter cleaning device to clean the filter in accordance with the signal produced by the sensor.
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公开(公告)号：US20230225138A1
公开(公告)日：2023-07-13
申请号：US18185817
申请日：2023-03-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yumin KIM , Seyun KIM , Jinhong KIM , Soichiro MIZUSAKI , Youngjin CHO
IPC: H01L47/00
CPC classification number: H10B63/84 , H10B63/34 , H10N70/011 , H10N70/8833 , H10N70/231 , H10N70/8828 , H10N70/841
Abstract: A memory device may include an insulating structure including a first surface and a protrusion portion protruding from the first surface in a first direction, a recording material layer on the insulating structure and extending along a protruding surface of the protrusion portion to cover the protrusion portion and extending onto the first surface of the insulating structure, a channel layer on the recording material layer and extending along a surface of the recording material layer, a gate insulating layer on the channel layer; and a gate electrode formed on the gate insulating layer at a location facing a second surface of the insulating structure. The second surface of the insulating structure may be a protruding upper surface of the protrusion portion.
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Patent Agency Ranking
公开(公告)号：US20230083978A1
公开(公告)日：2023-03-16
申请号：US17989206
申请日：2022-11-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jungho YOON , Soichiro MIZUSAKI , Youngjin CHO
Abstract: A semiconductor device is provided. The semiconductor device includes a substrate a substrate, a first electrode structure on the substrate, the first electrode structure including first insulating patterns and first electrode patterns, the first insulating patterns alternately stacked with the first electrode patterns, a second electrode pattern on a sidewall of the first electrode structure, and a data storage film on a sidewall of the second electrode pattern. The data storage film has a variable resistance.
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公开(公告)号：US20220302380A1
公开(公告)日：2022-09-22
申请号：US17395040
申请日：2021-08-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Soichiro MIZUSAKI , Doyoon KIM , Seyun KIM , Yumin KIM , Jinhong KIM , Youngjin CHO
Abstract: A variable resistance memory may include first and second conductive elements spaced apart from each other on a variable resistance layer. The variable resistance layer may include first to third oxide layers sequentially arranged in a direction perpendicular to a direction in which the first and second conductive elements are arranged. A dielectric constant of the second oxide layer may be greater than dielectric constants of the first and third oxide layers.
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公开(公告)号：US20220298695A1
公开(公告)日：2022-09-22
申请号：US17701115
申请日：2022-03-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kanghyun LEE , Byoungyull YANG , Youngjin CHO , Sanggyu JUNG
IPC: D06F33/42 , D06F39/08 , D06F39/10 , D06F34/24 , D06F33/43 , B01D29/11 , B01D29/56 , B01D35/147 , B01D29/60 , B01D29/64 , B01D61/14 , B01D61/18 , B01D61/22
Abstract: A washing machine including a drainage pump to discharge water from a tub of the washing machine through a drainage passage, a first filter to which the water flows due to the drainage pump and provided along the drainage passage to filter out foreign matter equal to or greater than predetermined size, and a second filter to which the water flows from the first filter and provided along the drainage passage and to filter out foreign matter smaller than the predetermined size, wherein the drainage passage includes a first connecting hose to guide the water to flow from the tub to the first filter, a second connecting hose to guide the water to flow from the first filter to the second filter, and a drainage hose to guide the water to be discharged from the second filter to the outside of the washing machine.
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公开(公告)号：US20220246679A1
公开(公告)日：2022-08-04
申请号：US17523381
申请日：2021-11-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngjin CHO , Seyun KIM , Yumin KIM , Doyoon KIM , Jinhong KIM , Soichiro MIZUSAKI
Abstract: A variable resistance memory device includes a support layer including an insulating material; a variable resistance layer on the support layer and including a variable resistance material; a capping layer between the support layer and the variable resistance layer and protecting the variable resistance layer; a channel layer on the variable resistance layer; a gate insulating layer on the channel layer; and a plurality of gate electrodes and a plurality of insulators alternately and repeatedly arranged on the gate insulating layer in a first direction parallel with the channel layer. The capping layer may maintain oxygen vacancies formed in the variable resistance layer.
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公开(公告)号：US20220020437A1
公开(公告)日：2022-01-20
申请号：US17306302
申请日：2021-05-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yumin KIM , Seyun KIM , Jinhong KIM , Soichiro MIZUSAKI , Youngjin CHO
Abstract: A nonvolatile memory device and an operating method thereof are provided. The nonvolatile memory device includes a memory cell array including first to third memory cells sequentially arranged in a vertical stack structure and a control logic configured to apply a first non-selection voltage to the first memory cell, apply a second non-selection voltage different from the first non-selection voltage to the third memory cell, apply a selection voltage to the second memory cell, and select the second memory cell as a selection memory cell.
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