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公开(公告)号：US11987561B2
公开(公告)日：2024-05-21
申请号：US17147308
申请日：2021-01-12
发明人： Yoojeong Choi , Soonhyung Kwon , Hyeon Park , Jaeyeol Baek , Minsoo Kim , Shinhyo Bae , Daeseok Song , Dowon Ahn
IPC分类号： C07D251/34 , G03F7/004 , G03F7/11 , G03F7/16 , G03F7/26
CPC分类号： C07D251/34 , G03F7/0045 , G03F7/11 , G03F7/168 , G03F7/26
摘要： A resist underlayer composition includes (A) a polymer including a structural unit represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof; (B) a polymer including a structure in which at least one moiety represented by Chemical Formula 3 or Chemical Formula 4 and a moiety represented by Chemical Formula 7 are bound to each other; and (C) a solvent:
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公开(公告)号：US11048169B2
公开(公告)日：2021-06-29
申请号：US16214229
申请日：2018-12-10
发明人： Hyeon Park
摘要： A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer having a structure where at least one of a first moiety represented by one of Chemical Formula 1-1 to Chemical Formula 1-3 is combined with a third moiety represented by Chemical Formula 3, or at least one of a second moiety represented by one of Chemical Formula 2-1 to Chemical Formula 2-3 is combined with a third moiety represented by Chemical Formula 3
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公开(公告)号：US12130552B2
公开(公告)日：2024-10-29
申请号：US17419657
申请日：2020-03-23
发明人： Yoojeong Choi , Soonhyung Kwon , Minsoo Kim , Hyeon Park , Shinhyo Bae , Jaeyeol Baek
摘要： A resist underlayer composition and a method of forming patterns using the same is disclosed. The resist underlayer composition includes a polymer including a structure represented by Chemical Formula 1 at the terminal end and a structural unit represented by Chemical Formula 2 and a structural unit represented by Chemical Formula 3 in the main chain; and a solvent. Definitions of Chemical Formula 1 to Chemical Formula 3 are the same as described in the detailed description.
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公开(公告)号：US11698587B2
公开(公告)日：2023-07-11
申请号：US16436140
申请日：2019-06-10
发明人： Shinhyo Bae , Soonhyung Kwon , Hyeon Park , Jaeyeol Baek , Beomjun Joo , Yoojeong Choi
IPC分类号： G03F7/09 , G03F7/11 , C08G18/02 , C08L71/00 , G03F7/36 , G03F7/004 , C08L75/04 , C08L61/06 , C08L63/00 , C08L61/28
CPC分类号： G03F7/091 , C08G18/022 , C08L61/06 , C08L61/28 , C08L63/00 , C08L71/00 , C08L75/04 , G03F7/0041 , G03F7/0045 , G03F7/094 , G03F7/36
摘要： A resist underlayer composition and a method of forming patterns using a resist underlayer composition, the resist underlayer composition including a polymer, the polymer including a structural unit that is a reaction product of an isocyanurate compound, the isocyanurate compound having at least one thiol group thereon, and a solvent.
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公开(公告)号：US11675271B2
公开(公告)日：2023-06-13
申请号：US17153095
申请日：2021-01-20
发明人： Jaeyeol Baek , Soonhyung Kwon , Minsoo Kim , Hyeon Park , Shinhyo Bae , Daeseok Song , Yoojeong Choi
IPC分类号： G03F7/11 , G03F7/26 , C07D251/32 , G03F7/16 , G03F7/004
CPC分类号： G03F7/11 , C07D251/32 , G03F7/0045 , G03F7/168 , G03F7/26
摘要： A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.
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公开(公告)号：US11493848B2
公开(公告)日：2022-11-08
申请号：US16174524
申请日：2018-10-30
发明人： Soonhyung Kwon , Shinhyo Bae , Hyeon Park , Jaeyeol Baek , Beomjun Joo , Yoojeong Choi , Kwen-Woo Han
IPC分类号： G03F7/11 , G03F7/09 , H01L21/027 , C08G12/34 , C09D161/30 , H01L21/311 , G03F7/16 , G03F7/20 , G03F7/30
摘要： A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer that includes a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2,
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公开(公告)号：US10732504B2
公开(公告)日：2020-08-04
申请号：US15866809
申请日：2018-01-10
发明人： Shinhyo Bae , Soonhyung Kwon , Hyeon Park , Jaeyeol Baek , Beomjun Joo , Yoojeong Choi , Kwen-Woo Han
摘要： A resist underlayer composition and a method of forming patterns using the resist underlayer composition, the resist underlayer composition including a polymer including a moiety represented by Chemical Formula 1 and a moiety represented by Chemical Formula 2, and a solvent,
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公开(公告)号：US11249396B2
公开(公告)日：2022-02-15
申请号：US16789233
申请日：2020-02-12
发明人： Hyeon Park , Yoojeong Choi , Soonhyung Kwon , Shinhyo Bae , Jaeyeol Baek
摘要： A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1; and a solvent and a method of forming patterns using the resist underlayer composition: In Chemical Formula 1, at least one of A1 and A2 is a group represented by Chemical Formula A:
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公开(公告)号：US11982943B2
公开(公告)日：2024-05-14
申请号：US17732807
申请日：2022-04-29
发明人： Jaeyeol Baek , Shinhyo Bae , Yoojeong Choi , Soonhyung Kwon , Hyeon Park
CPC分类号： G03F7/0955 , G03F7/0045 , G03F7/0392 , G03F7/066 , G03F7/094
摘要： A resist underlayer composition and a method of forming patterns, the composition including a polymer including at least one of a first moiety represented by Chemical Formula 1-1 and a second moiety represented by Chemical Formula 1-2; a thermal acid generator including a salt composed of an anion of an acid and a cation of a base, the base having pKa of greater than or equal to about 7; and a solvent,
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公开(公告)号：US11385545B2
公开(公告)日：2022-07-12
申请号：US16558486
申请日：2019-09-03
发明人： Jaeyeol Baek , Shinhyo Bae , Yoojeong Choi , Soonhyung Kwon , Hyeon Park
摘要： A resist underlayer composition and a method of forming patterns, the composition including a polymer including at least one of a first moiety represented by Chemical Formula 1-1 and a second moiety represented by Chemical Formula 1-2; a thermal acid generator including a salt composed of an anion of an acid and a cation of a base, the base having pKa of greater than or equal to about 7; and a solvent,
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