公开(公告)号：US07252514B2

公开(公告)日：2007-08-07

申请号：US10931428

申请日：2004-09-02

申请人： Samuel R. McKnight ,  George F. Walker

发明人： Samuel R. McKnight ,  George F. Walker

IPC分类号： H01R12/00 ,  H05K1/00

CPC分类号： H01R9/0515 ,  G01R1/06772 ,  G01R1/07378

摘要： A method for forming a space transformer (and a space transformer formed by the method) having a first plate and a second plate, the plates being separated by a frame, and electrical connectors for providing electrical connections between electrical contacts which are relatively closely spaced on the first plate and relatively more widely spaced on the second plate. The method comprises attaching first ends of wires to first electrically conductive regions on the first plate; forming insulating layers over the wires; forming electrically conductive coverings over the insulating layers; and connecting second ends of the wires to second electrically conductive regions on the second plate.

摘要翻译： 一种用于形成具有第一板和第二板的空间变压器（和由该方法形成的空间变压器）的方法，所述板由框架分隔开，并且电连接器用于在电触点之间提供电连接，所述电触点相对紧密地间隔开 第一板并且在第二板上相对更宽的间隔。 该方法包括将导线的第一端附接到第一板上的第一导电区域; 在导线上形成绝缘层; 在绝缘层上形成导电覆盖物; 并且将所述导线的第二端连接到所述第二板上的第二导电区域。

公开(公告)号：US06960831B2

公开(公告)日：2005-11-01

申请号：US10605369

申请日：2003-09-25

申请人： Lloyd G. Burrell ,  Kwong H. Wong ,  Adreanne A. Kelly ,  Samuel R. McKnight

发明人： Lloyd G. Burrell ,  Kwong H. Wong ,  Adreanne A. Kelly ,  Samuel R. McKnight

IPC分类号： H01L23/485 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L24/05 ,  H01L23/53223 ,  H01L24/45 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2924/00011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0496 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device, and a method of fabricating the device, having a copper wiring level and an aluminum bond pad above the copper wiring level. In addition to a barrier layer which is normally present to protect the copper wiring level, there is a composite layer between the aluminum bond pad and the barrier layer to make the aluminum bond pad more robust so as to withstand the forces of bonding and probing. The composite layer is a sandwich of a refractory metal and a refractory metal nitride.

摘要翻译： 一种半导体器件，以及一种制造该器件的方法，在铜布线层上方具有铜布线层和铝接合焊盘。 除了通常存在以保护铜布线水平的阻挡层之外，在铝接合焊盘和阻挡层之间存在复合层，以使铝接合焊盘更坚固，以便承受粘结和探测的力。 复合层是难熔金属和难熔金属氮化物的夹层物。