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公开(公告)号：US07888670B2
公开(公告)日：2011-02-15
申请号：US12081272
申请日：2008-04-14
申请人： Sang Heon Han , Sang Won Kang , Jeong Tak Oh , Seung Beom Seo , Dong Joon Kim , Hyun Wook Shim
发明人： Sang Heon Han , Sang Won Kang , Jeong Tak Oh , Seung Beom Seo , Dong Joon Kim , Hyun Wook Shim
IPC分类号： H01L33/00
摘要： There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.
摘要翻译： 提供了一种氮化物半导体发光器件，包括：n型半导体区域; 形成在n型半导体区域上的有源层; 形成在有源层上的p型半导体区域; 与n型半导体区域接触的n电极; 形成在p型半导体区域上的p电极; 以及形成在n型半导体区域和p型半导体区域中的至少一个中的至少一个中间层，设置在n电极上方的中间层，其中中间层由多层结构形成，其中在 沉积具有彼此不同带隙的至少三层，其中多层结构包括AlGaN层/ GaN层/ InGaN层堆叠和InGaN层/ GaN层/ AlGaN层堆叠之一。
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公开(公告)号：US20080251781A1
公开(公告)日：2008-10-16
申请号：US12081272
申请日：2008-04-14
申请人： Sang Heon Han , Sang Won Kang , Jeong Tak Oh , Seung Beom Seo , Dong Joon Kim , Hyun Wook Shim
发明人： Sang Heon Han , Sang Won Kang , Jeong Tak Oh , Seung Beom Seo , Dong Joon Kim , Hyun Wook Shim
IPC分类号： H01L33/00
摘要： There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.
摘要翻译： 提供了一种氮化物半导体发光器件，包括：n型半导体区域; 形成在n型半导体区域上的有源层; 形成在有源层上的p型半导体区域; 与n型半导体区域接触的n电极; 形成在p型半导体区域上的p电极; 以及形成在n型半导体区域和p型半导体区域中的至少一个中的至少一个中间层，设置在n电极上方的中间层，其中中间层由多层结构形成，其中在 沉积具有彼此不同带隙的至少三层，其中多层结构包括AlGaN层/ GaN层/ InGaN层堆叠和InGaN层/ GaN层/ AlGaN层堆叠之一。
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公开(公告)号：US09166098B2
公开(公告)日：2015-10-20
申请号：US12338496
申请日：2008-12-18
申请人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
发明人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
CPC分类号： H01L33/06 , H01L33/025 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.
摘要翻译： 提供了包括多量子阱结构的有源层的氮化物半导体发光器件，所述氮化物半导体发光器件包括：衬底; 以及依次层叠在所述基板上的缓冲层，n型氮化物半导体层，有源层和p型氮化物半导体层，其中，所述有源层由多个势垒层和 多个阱层彼此交替布置，并且多个势垒层中的至少一个包括第一阻挡层，其包括掺杂有p掺杂剂和未掺杂阻挡层的p掺杂势垒层。
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公开(公告)号：US20100019223A1
公开(公告)日：2010-01-28
申请号：US12338496
申请日：2008-12-18
申请人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
发明人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/025 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.
摘要翻译： 提供了包括多量子阱结构的有源层的氮化物半导体发光器件，所述氮化物半导体发光器件包括：衬底; 以及依次层叠在所述基板上的缓冲层，n型氮化物半导体层，有源层和p型氮化物半导体层，其中，所述有源层由多个势垒层和 多个阱层彼此交替布置，并且多个势垒层中的至少一个包括第一阻挡层，其包括掺杂有p掺杂剂和未掺杂阻挡层的p掺杂势垒层。
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公开(公告)号：US20140103359A1
公开(公告)日：2014-04-17
申请号：US14125878
申请日：2011-07-28
申请人： Hyun Wook Shim , Sang Heon Han , Jae Woong Han , Dong Chul Shin , Je Won Kim , Dong Ju Lee
发明人： Hyun Wook Shim , Sang Heon Han , Jae Woong Han , Dong Chul Shin , Je Won Kim , Dong Ju Lee
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/025 , H01L33/20 , H01L33/24
摘要： A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.
摘要翻译： 提供了一种具有增强的发光效率的半导体发光器件及其制造方法。 半导体发光器件包括：在其上表面中形成有至少一个凹坑的n型半导体层; 形成在所述n型半导体层上的有源层，与所述凹坑对应的所述有源层的沿着所述凹坑弯曲的上表面的区域; 以及形成在有源层上的p型半导体层，p型半导体层对应于具有沿着有源层的弯曲部分弯曲的上表面的凹坑的区域。
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公开(公告)号：US20140191192A1
公开(公告)日：2014-07-10
申请号：US14235705
申请日：2011-07-29
申请人： Sang Heon Han , Hyun Wook Shim , Je Won Kim , Chu Young Cho , Seong Ju Park , Sung Tae Kim , Jin Tae Kim , Yong Chun Kim , Sang Jun Lee
发明人： Sang Heon Han , Hyun Wook Shim , Je Won Kim , Chu Young Cho , Seong Ju Park , Sung Tae Kim , Jin Tae Kim , Yong Chun Kim , Sang Jun Lee
CPC分类号： H01L33/0025 , H01L33/04 , H01L33/06 , H01L33/32
摘要： There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.
摘要翻译： 提供了一种半导体发光器件，其通过增加空穴流入有源层同时防止电子溢出而具有改善的发光效率。 半导体发光器件包括n型半导体层; 形成在所述n型半导体层上并且包括至少一个量子阱层和交替层叠的至少一个量子势垒层的有源层; 形成在有源层上的电子阻挡层，具有层叠有不同能带隙的三层以上的至少一层多层结构，三层中与有源层相邻的层具有倾斜的能带结构; 以及形成在电子阻挡层上的p型半导体层。
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公开(公告)号：US07462876B2
公开(公告)日：2008-12-09
申请号：US11584503
申请日：2006-10-23
申请人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
发明人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
IPC分类号： H01L33/00
摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.
摘要翻译： 本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。 发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极 半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。 中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。
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公开(公告)号：US20070145406A1
公开(公告)日：2007-06-28
申请号：US11584503
申请日：2006-10-23
申请人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
发明人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
IPC分类号： H01L33/00
摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.
摘要翻译： 本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。 发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极 半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。 中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。
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公开(公告)号：US07192884B2
公开(公告)日：2007-03-20
申请号：US10689629
申请日：2003-10-22
申请人： Dong Joon Kim , Byung Deuk Moon , Sang Heon Han
发明人： Dong Joon Kim , Byung Deuk Moon , Sang Heon Han
IPC分类号： H01L21/302
CPC分类号： H01S5/0421 , H01S5/2081 , H01S5/2206 , H01S5/2231 , H01S2304/00
摘要： Disclosed is a method for manufacturing a semiconductor laser device, comprising the steps of: (a) forming a first conductive-type clad layer, an active layer, and a second conductive-type clad layer on a first conductive-type semiconductor substrate; (b) forming a ridge structure by selectively etching the second conductive-type clad layer; (c) forming a current blocking layer around the ridge structure, the current blocking layer having protrusions on the upper surface thereof adjacent to the ridge structure, and an amorphous and/or polycrystalline layer on a partial area thereof; and (d) removing at least the amorphous and/or polycrystalline layer from the current blocking layer, and wet-etching the upper surface of the current blocking layer so that the protrusions are reduced in size.
摘要翻译： 本发明公开了一种半导体激光器件的制造方法，包括以下步骤：（a）在第一导电型半导体衬底上形成第一导电型覆盖层，有源层和第二导电型覆盖层; （b）通过选择性地蚀刻第二导电型覆盖层形成脊结构; （c）在所述脊结构周围形成电流阻挡层，所述电流阻挡层在其与所述脊结构相邻的上表面上具有突起，以及在其部分区域上的非晶和/或多晶层; 和（d）从电流阻挡层中去除至少非晶和/或多晶层，并且湿蚀刻电流阻挡层的上表面，使得突起的尺寸减小。
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公开(公告)号：US20130020553A1
公开(公告)日：2013-01-24
申请号：US13553344
申请日：2012-07-19
申请人： Sang Heon Han , Do Young Rhee , Jong Hyun Lee , Jin Young Lim , Young Sun Kim
发明人： Sang Heon Han , Do Young Rhee , Jong Hyun Lee , Jin Young Lim , Young Sun Kim
IPC分类号： H01L33/04
摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.
摘要翻译： 提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括 带隙能量通过第一斜率减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。 通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。
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