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1.发明申请公开(公告)号：US20050155624A1
公开(公告)日：2005-07-21
申请号：US10759344
申请日：2004-01-15
申请人： Sang Lee , Robert Bristol , Arun Ramamoorthy
发明人： Sang Lee , Robert Bristol , Arun Ramamoorthy
IPC分类号： B08B6/00 , G03F7/20 , H01L21/027
CPC分类号： G03F7/70916 , H01L21/0273
摘要： A magnetic and/or electric field may be generated around collector optics in an EUV lithography system to deflect debris particles from the reflective surfaces of the optics. The magnetic and/or electric field may be generated by a solenoid structure around the optics or by passing current through inner an outer shells in a nested shell arrangement.
摘要翻译： 可以在EUV光刻系统中的收集器光学器件周围产生磁场和/或电场，以使来自光学器件的反射表面的碎屑颗粒偏转。 磁场和/或电场可以通过围绕光学器件的螺线管结构产生，或者通过将电流传递通过嵌套壳体布置中的外部外壳。
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2.发明申请In-tool and Out-of-Tool Protection of Extreme Ultraviolet (EUV) Reticles 审中-公开极端紫外线（EUV）网络的工具和工具外保护公开(公告)号：US20080174749A1
公开(公告)日：2008-07-24
申请号：US12055250
申请日：2008-03-25
申请人： Arun Ramamoorthy , Robert Bristol
发明人： Arun Ramamoorthy , Robert Bristol
IPC分类号： G03B27/52
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/62 , G03F1/66 , G03F7/70741 , G03F7/70916
摘要： A reticle carrier for an Extreme Ultraviolet (EUV) reticle may include nested grids of electret fibers to provide active protection from contamination without a power supply. The reticle carrier may include in-line sensors for in-situ monitoring of contamination. Grids of electret fibers may also be used in an EUV pellicle.
摘要翻译： 用于极紫外（EUV）掩模版的掩模版载体可以包括驻极体纤维的嵌套网格，以在没有电源的情况下提供主动防止污染。 标线载体可以包括用于原位监测污染物的在线传感器。 驻极体纤维网格也可用于EUV防护薄膜。
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3.发明授权公开(公告)号：US07413586B2
公开(公告)日：2008-08-19
申请号：US10789670
申请日：2004-02-27
申请人： Arun Ramamoorthy , Robert Bristol
发明人： Arun Ramamoorthy , Robert Bristol
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/62 , G03F1/66 , G03F7/70741 , G03F7/70916
摘要： A reticle carrier for an Extreme Ultraviolet (EUV) reticle may include nested grids of electret fibers to provide active protection from contamination without a power supply. The reticle carrier may include in-line sensors for in-situ monitoring of contamination. Grids of electret fibers may also be used in an EUV pellicle.
摘要翻译： 用于极紫外（EUV）掩模版的掩模版载体可以包括驻极体纤维的嵌套栅格，以在没有电源的情况下提供主动防止污染。 标线载体可以包括用于原位监测污染物的在线传感器。 驻极体纤维网格也可用于EUV防护薄膜。
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公开(公告)号：US07446329B2
公开(公告)日：2008-11-04
申请号：US10638261
申请日：2003-08-07
申请人： Robert Bristol , Arun Ramamoorthy , Bryan J. Rice
发明人： Robert Bristol , Arun Ramamoorthy , Bryan J. Rice
IPC分类号： H01J35/00
CPC分类号： H05G2/003
摘要： Erosion of material in an electrode in a plasma-produced extreme ultraviolet (EUV) light source may be reduced by treating the surface of the electrode. Grooves may be provided in the electrode surface to increase re-deposition of electrode material in the grooves. The electrode surface may be coated with a porous material to reduce erosion due to brittle destruction. The electrode surface may be coated with a pseudo-alloy to reduce erosion from surface waves caused by the plasma in molten material on the surface of the electrode.
摘要翻译： 可以通过处理电极的表面来减少等离子体产生的极紫外（EUV）光源中的电极中的材料的侵蚀。 沟槽可以设置在电极表面中以增加沟槽中的电极材料的再沉积。 电极表面可以用多孔材料涂覆以减少由于脆性破坏引起的侵蚀。 电极表面可以涂覆有假合金，以减少由电极表面上的熔融材料中的等离子体引起的表面波的侵蚀。
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5.发明申请公开(公告)号：US20050191565A1
公开(公告)日：2005-09-01
申请号：US10789670
申请日：2004-02-27
申请人： Arun Ramamoorthy , Robert Bristol
发明人： Arun Ramamoorthy , Robert Bristol
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/62 , G03F1/66 , G03F7/70741 , G03F7/70916
摘要： A reticle carrier for an Extreme Ultraviolet (EUV) reticle may include nested grids of electret fibers to provide active protection from contamination without a power supply. The reticle carrier may include in-line sensors for in-situ monitoring of contamination. Grids of electret fibers may also be used in an EUV pellicle.
摘要翻译： 用于极紫外（EUV）掩模版的掩模版载体可以包括驻极体纤维的嵌套网格，以在没有电源的情况下提供主动防止污染。 标线载体可以包括用于原位监测污染物的在线传感器。 驻极体纤维网格也可用于EUV防护薄膜。
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公开(公告)号：US20050031502A1
公开(公告)日：2005-02-10
申请号：US10638261
申请日：2003-08-07
申请人： Robert Bristol , Arun Ramamoorthy , Bryan Rice
发明人： Robert Bristol , Arun Ramamoorthy , Bryan Rice
CPC分类号： H05G2/003
摘要： Erosion of material in an electrode in a plasma-produced extreme ultraviolet (EUV) light source may be reduced by treating the surface of the electrode. Grooves may be provided in the electrode surface to increase re-deposition of electrode material in the grooves. The electrode surface may be coated with a porous material to reduce erosion due to brittle destruction. The electrode surface may be coated with a pseudo-alloy to reduce erosion from surface waves caused by the plasma in molten material on the surface of the electrode.
摘要翻译： 可以通过处理电极的表面来减少等离子体产生的极紫外（EUV）光源中的电极中的材料的侵蚀。 沟槽可以设置在电极表面中以增加沟槽中的电极材料的再沉积。 电极表面可以用多孔材料涂覆以减少由于脆性破坏引起的侵蚀。 电极表面可以涂覆有假合金，以减少由电极表面上的熔融材料中的等离子体引起的表面波的侵蚀。
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7.发明授权公开(公告)号：US07423275B2
公开(公告)日：2008-09-09
申请号：US10759344
申请日：2004-01-15
申请人： Sang Hun Lee , Robert Bristol , Arun Ramamoorthy
发明人： Sang Hun Lee , Robert Bristol , Arun Ramamoorthy
IPC分类号： H01J1/50
CPC分类号： G03F7/70916 , H01L21/0273
摘要： A magnetic and/or electric field may be generated around collector optics in an EUV lithography system to deflect debris particles from the reflective surfaces of the optics. The magnetic and/or electric field may be generated by a solenoid structure around the optics or by passing current through inner an outer shells in a nested shell arrangement.
摘要翻译： 可以在EUV光刻系统中的收集器光学器件周围产生磁场和/或电场，以使来自光学器件的反射表面的碎屑颗粒偏转。 磁场和/或电场可以通过围绕光学器件的螺线管结构产生，或者通过将电流传递通过嵌套壳体布置中的外部外壳。
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公开(公告)号：US09530688B2
公开(公告)日：2016-12-27
申请号：US14822865
申请日：2015-08-10
IPC分类号： H01L21/4763 , H01L21/768 , H01L23/522 , H01L21/033 , H01L21/311
CPC分类号： H01L21/76877 , H01L21/0337 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A method of an aspect includes forming an interconnect line etch opening in a hardmask layer. The hardmask layer is over a dielectric layer that has an interconnect line disposed therein. The interconnect line etch opening is formed aligned over the interconnect line. A block copolymer is introduced into the interconnect line etch opening. The block copolymer is assembled to form a plurality of assembled structures that are spaced along a length of the interconnect line etch opening. An assembled structure is directly aligned over the interconnect line that is disposed within the dielectric layer.
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9.发明申请Plasma-Based Debris Mitigation for Extreme Ultraviolet (EUV) Light Source 有权极端紫外线（EUV）光源基于等离子体的碎片减轻公开(公告)号：US20070235666A1
公开(公告)日：2007-10-11
申请号：US11762011
申请日：2007-06-12
申请人： David Ruzic , Robert Bristol , Bryan Rice
发明人： David Ruzic , Robert Bristol , Bryan Rice
IPC分类号： H01J35/00
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70166 , G03F7/70916 , H01J37/321 , H01J2237/022 , H05G2/001
摘要： A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.
摘要翻译： 极紫外（EUV）光刻系统中的光源室可以包括用于离子化由光源产生的碎屑颗粒的二次等离子体和箔陷阱以捕获电离粒子，以避免腔室中的收集器光学元件的污染。
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10.发明申请Methods to manufacture contaminant-gettering materials in the surface of EUV optics 有权在EUV光学表面制造污染物吸收材料的方法公开(公告)号：US20060216912A1
公开(公告)日：2006-09-28
申请号：US11092167
申请日：2005-03-28
申请人： Robert Bristol , Bruce Billett
发明人： Robert Bristol , Bruce Billett
IPC分类号： H05H1/00 , H01J35/00 , H01L21/322
CPC分类号： G21K1/06 , G21K2201/067
摘要： Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposited on an optical coating on the optical element. Trenches are formed in the optical coating. The gettering agent is formed into the trenches over the photoresist. Next, the photoresist is removed from the optical coating to expose the gettering agent in the trenches. For another embodiment, patches of a nanotube forest having a gettering agent are formed in designated areas of an optical element. The gettering agent of the patches may be a plurality of carbon nanotubes. The optical coating is formed on a substrate between patches of the gettering agent.
摘要翻译： 本文描述了在EUV光学器件的表面中制造污染物吸收材料的方法。 对光学元件进行图案化，并且在光学元件的表面上形成污染物吸收材料。 在一个实施例中，光致抗蚀剂沉积在光学元件上的光学涂层上。 在光学涂层中形成沟槽。 吸光剂形成在光致抗蚀剂上的沟槽中。 接下来，从光学涂层去除光致抗蚀剂以暴露沟槽中的吸杂剂。 对于另一个实施例，在光学元件的指定区域中形成具有吸气剂的纳米管森林的贴片。 补片的吸气剂可以是多个碳纳米管。 该光学涂层形成在吸气剂的贴片之间的衬底上。
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